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Filtering by: Subject Transistors Remove constraint Subject: Transistors Advisor Goodnick, Stephen M. Remove constraint Advisor: Goodnick, Stephen M.

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  • Fabrication and characterization of modulation doped field effect transistors for quantum waveguide structures

    Creator:
    Yindeepol, Wipawan, 1960-
    Abstract:
    Split and normal gate A1GaAs /GaAs MODFETs were fabricated along with the ohmic test structures and the Hall bar geometries. The DC characteristics of normal gate transistors were evaluated at room temperature and at 77K and the threshold voltages were extracted from the measurements and compared to the theoretical results....
    Resource Type:
    Masters Thesis
    Full Text:
    carings. TABLE OF CONTENTS 1. Introduction 1 1.1 The Modulation Doped Field Effect Transistor 1 1.2

  • Two dimensional electron transport in pseudomorphic InGaAs/AlGaAs heterojunctions

    Creator:
    Orwa, Julius O.
    Resource Type:
    Masters Thesis
    Full Text:
    transistor is one of the major components in information processing systems. By far, the transistor that has

  • Analog integrated circuit design using GaAs C-HFETs

    Creator:
    Gupta, Rakhee
    Abstract:
    Present day data processing technology requires very high speed signal processing and data conversion rates. One such application which requires high speed is switched capacitor circuits used in Sigma-Delta modulators. A major active component of switched capacitor circuits is the monolithic operational amplifier(opamp). Because of the relatively poor speed performance...
    Resource Type:
    Masters Thesis
    Full Text:
    Field Effect Transistor (FET) technology to analog integrated circuit de­ sign. Some analog circuits

  • Modeling and characterization of hemt devices

    Creator:
    Chang, Chujyh
    Abstract:
    Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and AIGaAs /InGaAs High Electron Mobility Transistors were electrically characterized in order to compare the room temperature DC device performance with one-dimensional device models. Model parameters such as the channel mobility and source/drain series resistances are extracted from independent measurement of...
    Resource Type:
    Masters Thesis
    Full Text:
    . TABLE OF CONTENTS 1. Introduction 1 1.1 The High Electron Mobility Transistor 1 1.2 Structure of the

  • Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

    Creator:
    Schulte, Donald W.
    Abstract:
    This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the indium mole fraction and quantum well width of the InGaAs channel region. Extensive characterization...
    Resource Type:
    Masters Thesis
    Full Text:
    field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown

  • Design, fabrication and characterization of complementary heterojunction field effect transistors

    Creator:
    McMahon, Terry E. (Terry Edwin), 1963-
    Abstract:
    Complementary delta-doped AlGaAs/GaAs Heterojunction Field Effect Transistor (CHFET) devices and circuits were fabricated using MBE and a 2μ non-planar gate recess process. Several schemes were used in an attempt to improve the performance of the p-channel HFETs. These included delta-doping, carbon-doping and dipole-doping. Circuits and individual n- and p- channel...
    Resource Type:
    Masters Thesis
    Full Text:
    Transistor (CHFET) devices and circuits were fabricated using MBE and a 2vt non-planar gate recess

  • Device characterization and analog circuit design for heterojunction FETs

    Creator:
    Wang, Binan
    Abstract:
    Present day data processing technology requires very high speed signal processing and data conversion rates. Traditionally, these circuits have been implemented in silicon MOS technology, whose high speed performance is limited, due to inherent material properties. Though relatively immature compared to silicon technology, GaAs integrated circuit technology appears to be...
    Resource Type:
    Masters Thesis
    Full Text:
    . Measured and simulated 1S211 (Sandia p-HFET). 25 14. Top view of RF transistor layout. 27 15. Gate diode

  • A parallel/vector Monte Carlo MESFET model for shared memory machines

    Creator:
    Huster, Carl R.
    Abstract:
    The parallelization and vectorization of Monte Carlo algorithms for modelling charge transport in semiconductor devices are considered. The standard ensemble Monte Carlo simulation of a three parabolic band model for GaAs is first presented as partial verification of the simulation. The model includes scattering due to acoustic, polar-optical and intervalley...
    Resource Type:
    Masters Thesis