New transparent p- and n-type semiconductors and luminescent materials have been prepared and characterized. Synthesis, structures, optical and electrical properties of new chalcogenide fluoride p-type transparent semiconductors MCuQF (M=Ba, Sr; Q=S, Se, Te) are described. Band-gap tuning and improvement in conductivity through p-type doping are demonstrated in the family. The...
Amorphous metal thin films lack the grain boundaries and dislocations present in
crystalline metal films. As a result, amorphous metal films can be more mechanically robust, atomically smooth, and more resistant to chemical attack than crystalline metals. However, amorphous metals are meta-stable and subject to crystallization upon heating, thus limiting...
The subject of this PhD thesis is part of a research domain of great present interest in new semiconductor materials for photovoltaic and thermoelectric applications. This domain contains the elaboration and the study of both Cu-based chalcogenides bulk and thin-film samples, driven by materials design principles.
One of the most...
An inorganic aqueous precursor for the deposition of ZrO2 thin films via spincoating
was developed. Hydrolysis and condensation chemistries of
ZrOCl₂·8H₂O were used as the principal reactions to guide the synthesis.
Refractive index, n, for a film annealed at 300 °C at 550 nm was measured to
be n=1.97 by...
The aqueous chemistries of two transition metal cations, Zr⁴⁺ and Nb⁵⁺, are examined and then used to develop inorganic precursor solutions. The oxides of these cations (ZrO₂ and Nb₂O₅) are deposited and characterized, and their morphological and optical properties discussed. Due to the obstacles created by niobium's aqueous chemistry, an...
The solution chemistry and kinetic behavior of hafnium peroxy sulfate solutions ("HafSOx") is described in terms of peroxide content and solution speciation. Additionally, thin film behavior, including thermal behavior and solubility, is characterized, and a mechanism of patterning is presented, as well as parameters that should be considered when looking...
Crystals of an incongruent-melting compound, Ba₃MgSi₂O₈, were grown by the flux method and its structure was determined by single crystal X-ray diffraction methods. Ba₃MgSi₂O₈ crystallizes in trigonal space group P-3[bar]m1 with a = 5.6123(3) Å, c = 7.2667(9) Å and Z = 1. Eu²⁺ ions prefer one crystallographic Ba site...