This paper is a study of the design of an integrated MOS addressing
circuit by using the modified two-phase dynamic shift register. This modified circuit is compared to the conventional two-phase
dynamic SR and discussed briefly. The resulting circuit shows
several advantages to improve the essential conditions of integrated
circuit...
The use of the exponential-transfer-characteristics of a transistor
junction as a means of giving a logarithmic sweep calibration to a
sampling oscilloscope is presented. The prior work in logarithmic
converters leading up to the use of the transistor's transfer properties
is explored. A circuit adapting a sampling oscilloscope to a...
This paper is concerned with the design of a 21-bit
metal-oxide-semiconductor field-effect transistor (MOSFET)
integrated circuit static shift register.
This circuit consists of three separate 1, 4, and
16-bit static shift registers constructed on a single
monolithic chip, each with independent input and output
terminals.
Type D flip-flops are used...
This paper is a study of various linear Metal-Oxide-
Semiconductor integrated circuit configurations with the
goal of improving their operation. The operation of MOS
devices is covered including their use as load devices
to replace diffused resistors. The advantages and disadvantages
of the resulting circuits as well as possible
physical...
Vacuum evaporated dielectrics for use in MOS structures
were studied in this research project. Dielectric
films were deposited on substrates by electron bombardment
evaporation of sapphire and quartz source materials.
These deposited films were studied using infrared spectroscopy,
index of refraction, density, and dielectric constant
measurements. Etching tests were also...
Low temperature noise measurements on junction field-effect
transistors tend to substantiate a theory of low frequency field-effect
transistor noise based on the presence of generation centers in the
gate-channel depletion region. Measurements of device noise voltage
versus temperature reveal pronounced maxima and minima over the
temperature range of 300° K...
The theoretical characteristics of space-charge-limited
currents in solids are reviewed, and a survey of
suitable dielectric materials and experimental space-charge-limited devices is presented.
The properties of the gold-silicon contact as used
in space-charge-limited devices were experimentally investigated.
It was found that the observed characteristics
could be explained on the basis...
This thesis investigates a way to fabricate P-N junctions by
percussive welding. The theoretical basis of percussive welding, design
considerations of the apparatus used, and the electrical characteristics
of the junctions were the main objectives of this investigation.
P-type silicon wafers and gold wire doped with arsenic as a
N-type...
The exponential characteristic of the base-emitter
Junction in bipolar transistors was used to make an
accurate and fairly temperature independent multiplier.
Using hybrid-pi transistor models and ECAP, a
bandwidth of 350 MHz was predicted. Linearity is
limited by emitter degeneration in the input differential
stage rather than by the small...
Four methods for the simultaneous fabrication of
field-effect and bipolar transistors have been investigated.
The basic process involves obtaining two different
junction depths by a single diffusion. This was
accomplished by the techniques of (1) partial masking,
(2) two depositions, (3) etched channels, and (4) oxide
depletion.
The first three...
The properties of flash- evaporated films of GaAs
and GaP were studied in this investigation. Films were
grown at various substrate temperatures, source temperatures,
source-to-substrate distances and rates of deposition
and were evaluated as to their structural,
optical and electric properties.
It was found that substrate temperature was the
major...
This paper describes a technique for separating the
two signal voltages which are necessary for balancing an
ac impedance bridge from its detector output voltage.
The technique is unique in that the necessary information
is derived from modulations on the generator voltage.
These modulations are formed by perturbing the variable...
The experimental procedure for reactively sputtering
films of silicon nitride together with the methods for
measuring the film thickness have been investigated.
Some of the properties of these nitride films were studied.
These properties included: infrared spectrum,
etching properties, and index of refraction. The adherence
of the films was also...
The
experimental
procedure
for
evaporating
silicon
monoxide
together
with
the
methods
for
measuring
the film
thickness
have
been
investigated.
The
effects
of
various
process
parameters
on
the
rate
of
deposition,
such
as
source
temperature
and
source-substrate
distance,
have
been
studied.
The
uniformity
of
silicon
monoxide
films
deposited
by
this
particular...
Analysis, coupled with an experimental investigation, is an important step in the design process of
electronic circuits. Fortunately, with the development
of computer programs to perform general network analysis,
the job of analyzing relatively complex networks is not
as formidable as it once was. This investigation develops guidelines for efficiently...
Wideband tunnel-diode amplifiers using common-base
transistor stages for isolation were investigated for
stability criteria, frequency response, and the effects
of temperature and voltage supply fluctuations. For the
first time the full frequency spectrum of a tunnel-diode,
from d-c to the gigahertz (GHz) range, was able to be
utilized in an...
A technique was investigated in which a silicon crystal was
used as a very sensitive detector of sub-nanogram quantities of
boron. The unknown quantity of boron was spread uniformly on
the surface of an n-type silicon wafer which was then baked for
diffusion. The measured depth of the p-n junction...
Changes in the diode characteristics of three different
types of diodes were studied. These were point-contact, bonded and zinc-diffused diodes. The parameters
in which measurable changes were observed were the forward
resistance, the reverse breakdown voltage, the
forward "knee" of the diode curve and the constant of
proportionality relating the...
This paper is concerned with the determination of
gallium arsenide resistivity by measurement of attenuation of microwave energy at 7500 megacycles transmitted
through a slice.
The first section of this paper describes gallium
arsenide properties as compared to silicon, germanium,
silicon carbide, and diamond. A description is then
given of...
This thesis presents some experimental results for
producing controlled PN and NPN diffused structures in
silicon by varying the strength of the diffusion sources.
Boron diffusions were carried out in a N₂ atmosphere at
1200°C with 10%, 20%, 30% and 40% B₂0₃ in silicic acid as
sources. Phosphorus diffusions were...