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Filtering by: Creator Ohm, Robin A. Remove constraint Creator: Ohm, Robin A. Advisor Looney, James C. Remove constraint Advisor: Looney, James C.

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  • Influence of surface fields on shallow planar-junction breakdown voltages

    Creator:
    Kim, Sŭng-yŏng
    Abstract:
    The influence of surface fields on the breakdown voltage is studied experimentally for p⁺-n silicon diodes with a junction depth of 0.5μ in order to improve the curvature- limited breakdown of the diffused, shallow-collector junction of a microwave transistor. Devices with a gap in the gate metal electrode are also...
    Resource Type:
    Masters Thesis
    Full Text:
    higher for a circular diode by 3% for 1 ohm-cm and 6% for 5 ohm-cm substrates. For a high-voltage

  • Vacuum-deposited aluminum-oxide MOS transistors

    Creator:
    Hwang, Yun-sheng
    Abstract:
    The properties of evaporated aluminum-oxide films were investigated. The characteristics of MOS devices made with single-layer aluminum-oxide films and double-layer films which were made by evaporating aluminum oxide over thermally-grown silicon dioxide as gate insulation have been investigated. Vacuum-evaporated aluminum oxide has features which are suitable for fabricating MOS devices....
    Resource Type:
    Masters Thesis
    Full Text:
    - cated on one ohm-cm n-type (111) silicon wafers. Auto- matic display and plotting equipment were used

  • Properties of flash-evaporated gallium arsenide and gallium phosphide epitaxial films

    Creator:
    Matsuo, Samuel Seiji
    Abstract:
    The properties of flash- evaporated films of GaAs and GaP were studied in this investigation. Films were grown at various substrate temperatures, source temperatures, source-to-substrate distances and rates of deposition and were evaluated as to their structural, optical and electric properties. It was found that substrate temperature was the major...
    Resource Type:
    Dissertation
    Full Text:
    of 6x10 -3 ohm -cm to 0.01 ohm -cm material had very high resistivities. To lower film resistivity

  • Metal-to-gallium arsenide contact evaluation using a VHF bridge technique

    Creator:
    Armantrout, G. A.
    Abstract:
    In this paper, the theory of metal-semiconductor contacts was applied to metal contacts on gallium arsenide. A model was discussed which proposed that the contact resistance was due to a highly resistive region between the metal and the semiconductor. In order to evaluate this resistance, a technique using a VHF...
    Resource Type:
    Masters Thesis
    Full Text:
    polarity up to about ten volts. A sample of O. 1 ohm -cm N -type gallium arsenide was checked with one

  • Thermal growth and chemical etching of silicon dioxide film

    Creator:
    Mai, Chao Chen
    Abstract:
    Some important factors that affect the dimensional control of oxide films on silicon were studied. Both N- and P-type silicon with resistivities in the range of 0.014 to 200 ohm-cm and a (111) surface orientation were employed in this experiment. The etching rates of silicon dioxide in hydrofluoric acid (111)...
    Resource Type:
    Masters Thesis
    Full Text:
    range of 0.014 to 200 ohm -cm and a (111) surface orientation were employed in this experiment. The

  • The MOS tetrode transistor

    Creator:
    Limvorapun, Thawee
    Abstract:
    The MOS tetrode transistor is studied in this project. This device is ideally suited for high frequency and switching application. In effect it is the solid state analogy of a multigrid vacuum tube performing a very useful multigrid function. A new structure is developed for p-channel 10 ohm-cm. silicon substrate...
    Resource Type:
    Masters Thesis
    Full Text:
    of a 10 ohm-cm. n-type silicon wafer, with (111) crystal orien- tation. The pyrolytic SiO2 process

  • A low power zone-refining system for semiconductor materials

    Creator:
    Christensen, Gerald Albert
    Abstract:
    This paper presents an investigation of the power needs and impedance-matching techniques involved when heating small charges of relatively high-resistivity semiconductor materials. Topics of discussion also include a brief section on the theoretical basis for zone refining, relative merits of resistance and induction heating, travel mechanism requirements, and work coil...
    Resource Type:
    Masters Thesis
    Full Text:
    to be ,001 ohm-cm or 7.91 x I05 cps if we assume p to be ,01, Because it is necessary to have a

  • A MOS-transistor with submicron, and graded channel

    Creator:
    Chou, Pen Chao
    Abstract:
    The theoretical aspects and fabrication techniques of a new surface field-effect transistor were investigated. The new MOS-transistor uses a three-layer structure similar to those found in bipolar transistors. The new MOS structure introduces an impurity gradient in the channel region of the transistor and also makes it possible to reduce...
    Resource Type:
    Dissertation
    Full Text:
    A MOS-transistor with submicron, and graded channel AN

  • The high frequency performance of a Schottky diode detector

    Creator:
    Crane, Albert Sears
    Abstract:
    This paper analyzes the theory and performance of a Schottky barrier diode detector used over a frequency range extending from a few kilohertz into the gigahertz region. The process of large signal rectification is analyzed with the simplified detector circuit. Phenomena which can affect the rectification process at high frequencies,...
    Resource Type:
    Masters Thesis
    Full Text:
    package is placed between the center conductor and the outer wall of a 50 ohm coaxial line. The glass

  • Low level D-C detection using a photoconductive modulator

    Creator:
    Teien, Aage
    Resource Type:
    Masters Thesis
    Full Text:
    , has a 10W input resistance, in the order of 1 ohm. 20 microvolts terminated in 1. ohm gives an input

  • A complementary MOS random-access-memory cell wth double-diffused MOS transistors

    Creator:
    Tao, David Ming-Shih
    Abstract:
    The use of double-diffused n-type MOS transistor (DN-MOS) in a complementary MOS random-access-memory (CMOS RAM) cell is the main objective of this investigation. DN-MOS transistors and conventional p-channel MOS transistors on the same chip have been successfully fabricated. Process sequence effects on device threshold voltage and channel length are discussed....
    Resource Type:
    Dissertation
    Full Text:
    resistivity of 1 to 5 ohm-cm, which means INA NDI has a range between 5 x 10 15 to 10 15 per cm3

  • The concentration profile of diffused radio-active antimony in a silicon-dioxide layer

    Creator:
    Khanna, Satya Pal
    Abstract:
    The selective masking effect of a thermally grown layer of silicon dioxide has been widely utilized as a technique for controlling the geometry and impurity concentration in semi-conductor device technology. It is also recognized that the passivation of the silicon surface by the vitreous silicon dioxide envelope protects the underlying...
    Resource Type:
    Masters Thesis
    Full Text:
    value of C'Ñ 1014 /cc which corresponds to a resistivity of about 1 ohm -cm for p -type material and C

  • Determination of sub-nanogram quantities of boron by diffusion in silicon

    Creator:
    Khanna, Satya Pal
    Abstract:
    A technique was investigated in which a silicon crystal was used as a very sensitive detector of sub-nanogram quantities of boron. The unknown quantity of boron was spread uniformly on the surface of an n-type silicon wafer which was then baked for diffusion. The measured depth of the p-n junction...
    Resource Type:
    Dissertation
    Full Text:
    Privacy (Major professor).. A technique was investigated in which a silicon crystal was used as a

  • Hall-effect devices for instructional use

    Creator:
    Dills, Gerald Frederick
    Abstract:
    Problems with Hall devices for instructional use in undergraduate laboratories stimulated this investigation for development of rugged, easily constructed, inexpensive, electrically reproducible Hall devices with high output voltage. Silicon was chosen as the Hall-plate material on the basis of cost and availability. Advantages and disadvantages of various plate shapes, sizes,...
    Resource Type:
    Masters Thesis
    Full Text:
    Eigler (1957) have shown that alloying electroless nickel contacts to one-ohm-cm, n-type silicon at a

  • Microwave methods of measuring resistivity of gallium arsenide

    Creator:
    Quinn, Alexander C.
    Abstract:
    This paper is concerned with the determination of gallium arsenide resistivity by measurement of attenuation of microwave energy at 7500 megacycles transmitted through a slice. The first section of this paper describes gallium arsenide properties as compared to silicon, germanium, silicon carbide, and diamond. A description is then given of...
    Resource Type:
    Masters Thesis
    Full Text:
    -90 dbm. This would be the attenuation found for a semiconductor resistivity of approximately 10 ohm

  • Compatible field-effect and bipolar transistors

    Creator:
    Cheung, David Kin-Poon
    Abstract:
    Four methods for the simultaneous fabrication of field-effect and bipolar transistors have been investigated. The basic process involves obtaining two different junction depths by a single diffusion. This was accomplished by the techniques of (1) partial masking, (2) two depositions, (3) etched channels, and (4) oxide depletion. The first three...
    Resource Type:
    Masters Thesis
    Full Text:
    and a base region sheet resistance of 198 ohm /sq. An emitter mask was used to etch the emitter

  • Impact ionization in gold-doped silicon

    Creator:
    Frescura, Bert Louis
    Resource Type:
    Masters Thesis
    Full Text:
    sponded to a resistivity of 103 ohm-cm. It can be seen that there was qualitative agreement, and this

  • Thin-film wideband tunnel-diode amplifier

    Creator:
    Hsieh, Edmund Jui-ching
    Abstract:
    Wideband tunnel-diode amplifiers using common-base transistor stages for isolation were investigated for stability criteria, frequency response, and the effects of temperature and voltage supply fluctuations. For the first time the full frequency spectrum of a tunnel-diode, from d-c to the gigahertz (GHz) range, was able to be utilized in an...
    Resource Type:
    Dissertation
    Full Text:
    on the order of 6x10 -4 ohm -cm have a negative temperature co- efficient for I . The net result

  • Variable-width pulse generation using avalanche transistors

    Creator:
    Magnuson, Waldo George
    Abstract:
    The extremely fast ionization process in semiconductors offers a means of generating pulses that have sub -nanosecond rise times and high peak powers. There are several important applications of these pulses which require the duration of the generated pulse to be variable. This thesis investigates three methods of producing variable...
    Resource Type:
    Masters Thesis
    Full Text:
    current rise time (4, p. 456). The output pulse was monitered across the 50 ohm load by a Tektronix

  • An integrated analog multiplier circuit

    Creator:
    Traa, Einar
    Abstract:
    The exponential characteristic of the base-emitter Junction in bipolar transistors was used to make an accurate and fairly temperature independent multiplier. Using hybrid-pi transistor models and ECAP, a bandwidth of 350 MHz was predicted. Linearity is limited by emitter degeneration in the input differential stage rather than by the small...
    Resource Type:
    Masters Thesis
    Full Text:
    semiconductor industry. The substrate wafers were commercial p-type silicon, with a resistivity of 10 ohm

  • Linear metal-oxide-semiconductor integrated circuits

    Creator:
    Chalfan, John Lawrence
    Abstract:
    This paper is a study of various linear Metal-Oxide- Semiconductor integrated circuit configurations with the goal of improving their operation. The operation of MOS devices is covered including their use as load devices to replace diffused resistors. The advantages and disadvantages of the resulting circuits as well as possible physical...
    Resource Type:
    Masters Thesis
    Full Text:
    , in this case typically 5 ohm-cm. After the surface of the epitaxial layer has been oxidized, a

  • Diffusion of boron and phosphorus in silicon

    Creator:
    Ou, Teh Ming
    Abstract:
    This thesis presents some experimental results for producing controlled PN and NPN diffused structures in silicon by varying the strength of the diffusion sources. Boron diffusions were carried out in a N₂ atmosphere at 1200°C with 10%, 20%, 30% and 40% B₂0₃ in silicic acid as sources. Phosphorus diffusions were...
    Resource Type:
    Masters Thesis
    Full Text:
    EI,ECTRICAL ENGINEERING]ffi') is presented 4u a. l1 tJl* - Title DIFFUSION OF B AND PHOS Abstract

  • The effect of etches on surface recombination in silicon

    Creator:
    Cheng, Dan Sang
    Abstract:
    This thesis presents a limited investigation of the effects of various etches on the surface properties of silicon. Surface recombination velocities of silicon under different etching treatments are compared by using the photoelectromagnetic effect. A measure of the minority carriers lifetime by the photoconductive decay method provides another means of...
    Resource Type:
    Masters Thesis
    Full Text:
    sample. Experimental Results N -type silicon with a resistivity of 480 ohm -cm was used. The

  • Vacuum evaporated dielectrics in MOS structures

    Creator:
    Delzer, Dennis Richard
    Abstract:
    Vacuum evaporated dielectrics for use in MOS structures were studied in this research project. Dielectric films were deposited on substrates by electron bombardment evaporation of sapphire and quartz source materials. These deposited films were studied using infrared spectroscopy, index of refraction, density, and dielectric constant measurements. Etching tests were also...
    Resource Type:
    Dissertation
    Full Text:
    same crystal (111) and had a resistivity of 7 x 10-4 ohm-cm. Since the wafers were already lapped

  • Space-charge-limited currents in silicon using gold contacts

    Creator:
    Ede, Alan Winthrop
    Abstract:
    The theoretical characteristics of space-charge-limited currents in solids are reviewed, and a survey of suitable dielectric materials and experimental space-charge-limited devices is presented. The properties of the gold-silicon contact as used in space-charge-limited devices were experimentally investigated. It was found that the observed characteristics could be explained on the basis...
    Resource Type:
    Dissertation
    Full Text:
    characteristics of space- charge- limited currents in solids are reviewed, and a survey of suitable

  • An eraseable MOS read-only memory

    Creator:
    Johnson, Norman Leland
    Abstract:
    A non-volatile electrically alterable read-only memory using an MOS field effect transistor with a threshold voltage which depended upon the position of ionic charges for its memory was fabricated. The conventional silicon dioxide layer was replaced by a composite layer consisting of thermal silicon dioxide, electron beam evaporated aluminum oxide,...
    Resource Type:
    Dissertation
    Full Text:
    for PrivacyAbstract approved: James C. Looney_ A non-volatile electrically alterable read-only memory

  • An integrated MOS addressing circuit

    Creator:
    Chang, Ki Suk
    Abstract:
    This paper is a study of the design of an integrated MOS addressing circuit by using the modified two-phase dynamic shift register. This modified circuit is compared to the conventional two-phase dynamic SR and discussed briefly. The resulting circuit shows several advantages to improve the essential conditions of integrated circuit...
    Resource Type:
    Masters Thesis
    Full Text:
    Abstract approved: James C. Looney This paper is a study of the design of an integrated MOS ad- dressing

  • Reactively sputtered films of silicon nitride for diffusion masking

    Creator:
    Delzer, Dennis Richard
    Abstract:
    The experimental procedure for reactively sputtering films of silicon nitride together with the methods for measuring the film thickness have been investigated. Some of the properties of these nitride films were studied. These properties included: infrared spectrum, etching properties, and index of refraction. The adherence of the films was also...
    Resource Type:
    Masters Thesis
    Full Text:
    DENNIS RICHARD DELZER A THESIS submitted to OREGON STATE UNIVERSITY in partial fulfillment of

  • Percussive-welded p-n junctions in silicon

    Creator:
    Tao, David Ming-Shih
    Abstract:
    This thesis investigates a way to fabricate P-N junctions by percussive welding. The theoretical basis of percussive welding, design considerations of the apparatus used, and the electrical characteristics of the junctions were the main objectives of this investigation. P-type silicon wafers and gold wire doped with arsenic as a N-type...
    Resource Type:
    Masters Thesis
    Full Text:
    JUNCTIONS IN SILICON Abstract approved. James C. Looney This thesis investigates a way to fabricate P

  • Percussion welding force, temperature and time relationships for welding 6061-T6 aluminum

    Creator:
    Eggers, Johannes Lyle
    Abstract:
    The force, temperature, and time relationships were investigated by using oscilloscope measurement techniques. Force was measured using a strain gage and the dynamic response recorded with a polaroid oscilloscope camera. Temperature was measured with a tungsten-rhenium thermocouple and recorded in the same manner. Residual stress measurements were made to determine...
    Resource Type:
    Masters Thesis
    Full Text:
    techniques - Force was measured using a straj-n gage and the dynamic response recorded with a polaroid

  • Field-effect transistor noise at low temperatures

    Creator:
    Spaulding, Richard Alan
    Abstract:
    Low temperature noise measurements on junction field-effect transistors tend to substantiate a theory of low frequency field-effect transistor noise based on the presence of generation centers in the gate-channel depletion region. Measurements of device noise voltage versus temperature reveal pronounced maxima and minima over the temperature range of 300° K...
    Resource Type:
    Masters Thesis
    Full Text:
    were used. The drain-source potential was maintained at a constant value by a 100-ohm drain load

  • Percussive welding of metal-semiconductor contacts

    Creator:
    Heck, Lyle Daniel
    Abstract:
    Application of automatic production techniques to the fabrication of semiconductor devices has been somewhat limited by the requirements of conventional alloying techniques. These alloying techniques require an excessive amount of individual handling. This thesis investigates the feasibility of applying percussive welding to the fabrication of metal-semiconductor contacts, as a solution...
    Resource Type:
    Masters Thesis
    Full Text:
    of applying percussive welding to the fabrication of metal- semiconductor contacts, as a solution

  • Schottky emission through thin aluminum-oxide films

    Creator:
    Chambers, Donald Ray
    Resource Type:
    Masters Thesis
    Full Text:
    discharge through the voltmeter. A one- thousand 12 ohm per volt instrument was used here. (3) Load

  • Oscilloscope sampling converter for observing nanosecond waveforms

    Creator:
    Leabo, Dell Patrick
    Resource Type:
    Masters Thesis
    Full Text:
    are a 20 millivolt input noise level, 50 ohm level signal input connection and the requirement that