Search Constraints

Start Over
Filtering by: Creator Hall, Lynn L. Remove constraint Creator: Hall, Lynn L. Advisor Looney, James C. Remove constraint Advisor: Looney, James C.

Search Results

  • Hall-effect devices for instructional use

    Creator:
    Dills, Gerald Frederick
    Abstract:
    Problems with Hall devices for instructional use in undergraduate laboratories stimulated this investigation for development of rugged, easily constructed, inexpensive, electrically reproducible Hall devices with high output voltage. Silicon was chosen as the Hall-plate material on the basis of cost and availability. Advantages and disadvantages of various plate shapes, sizes,...
    Resource Type:
    Masters Thesis
    Full Text:
    ends of the plate. This latter condition results in a shorting of the Hall voltage for L/w less than

  • Properties of flash-evaporated gallium arsenide and gallium phosphide epitaxial films

    Creator:
    Matsuo, Samuel Seiji
    Abstract:
    The properties of flash- evaporated films of GaAs and GaP were studied in this investigation. Films were grown at various substrate temperatures, source temperatures, source-to-substrate distances and rates of deposition and were evaluated as to their structural, optical and electric properties. It was found that substrate temperature was the major...
    Resource Type:
    Dissertation
    Full Text:
    . Films grown from zinc - rich powders had high resistivities in all cases. Hall measurements were

  • The MOS tetrode transistor

    Creator:
    Limvorapun, Thawee
    Abstract:
    The MOS tetrode transistor is studied in this project. This device is ideally suited for high frequency and switching application. In effect it is the solid state analogy of a multigrid vacuum tube performing a very useful multigrid function. A new structure is developed for p-channel 10 ohm-cm. silicon substrate...
    Resource Type:
    Masters Thesis
    Full Text:
    . Perkins for suggestions, and to Mr. Mark L. Nelson and Mrs. Blanche B. Stroup for consultation in

  • A MOSFET integrated circuit shift register

    Creator:
    Chen, David Wei
    Abstract:
    This paper is concerned with the design of a 21-bit metal-oxide-semiconductor field-effect transistor (MOSFET) integrated circuit static shift register. This circuit consists of three separate 1, 4, and 16-bit static shift registers constructed on a single monolithic chip, each with independent input and output terminals. Type D flip-flops are used...
    Resource Type:
    Masters Thesis
    Full Text:
    . Wine, R. L. Statistics for scientists and engineers. Englewood Cliffs, Prentice Hall, 1964. 671 p.

  • Microwave methods of measuring resistivity of gallium arsenide

    Creator:
    Quinn, Alexander C.
    Abstract:
    This paper is concerned with the determination of gallium arsenide resistivity by measurement of attenuation of microwave energy at 7500 megacycles transmitted through a slice. The first section of this paper describes gallium arsenide properties as compared to silicon, germanium, silicon carbide, and diamond. A description is then given of...
    Resource Type:
    Masters Thesis
    Full Text:
    in volved in order to measure Hall effect and resistivity of a sample of a gallium arsenide crystal

  • Linear metal-oxide-semiconductor integrated circuits

    Creator:
    Chalfan, John Lawrence
    Abstract:
    This paper is a study of various linear Metal-Oxide- Semiconductor integrated circuit configurations with the goal of improving their operation. The operation of MOS devices is covered including their use as load devices to replace diffused resistors. The advantages and disadvantages of the resulting circuits as well as possible physical...
    Resource Type:
    Masters Thesis
    Full Text:
    is the thickness of the oxide under the gate (1000 A = 10-5 cm). W and L are the width and length

  • An integrated MOS addressing circuit

    Creator:
    Chang, Ki Suk
    Abstract:
    This paper is a study of the design of an integrated MOS addressing circuit by using the modified two-phase dynamic shift register. This modified circuit is compared to the conventional two-phase dynamic SR and discussed briefly. The resulting circuit shows several advantages to improve the essential conditions of integrated circuit...
    Resource Type:
    Masters Thesis
    Full Text:
    T7 device (W /L = 1 8. Analysis of voltage waveforms. 1 9. One-bit delay waveform. 20. Two-bit

  • Low level D-C detection using a photoconductive modulator

    Creator:
    Teien, Aage
    Resource Type:
    Masters Thesis
    Full Text:
    Photoconductive Choppers --------------- 14 Magnetic Modulators ------------------------- 15 Hall Effect

  • Percussive welding of metal-semiconductor contacts

    Creator:
    Heck, Lyle Daniel
    Abstract:
    Application of automatic production techniques to the fabrication of semiconductor devices has been somewhat limited by the requirements of conventional alloying techniques. These alloying techniques require an excessive amount of individual handling. This thesis investigates the feasibility of applying percussive welding to the fabrication of metal-semiconductor contacts, as a solution...
    Resource Type:
    Masters Thesis
    Full Text:
    p n L P Aq D P p n I = hn L. P qVa/kT e qVa/kT A = junction area. q = charge on an

  • Field-effect transistor noise at low temperatures

    Creator:
    Spaulding, Richard Alan
    Abstract:
    Low temperature noise measurements on junction field-effect transistors tend to substantiate a theory of low frequency field-effect transistor noise based on the presence of generation centers in the gate-channel depletion region. Measurements of device noise voltage versus temperature reveal pronounced maxima and minima over the temperature range of 300° K...
    Resource Type:
    Masters Thesis
    Full Text:
    gGeneral Noise Features Thermal Noise Noise Due to Shockley-Read-Hall Centers Low Temperature n-Channel