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Filtering by: Creator Scrivani, James V. Remove constraint Creator: Scrivani, James V. Advisor Looney, James C. Remove constraint Advisor: Looney, James C.

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  • Vacuum-deposited aluminum-oxide MOS transistors

    Creator:
    Hwang, Yun-sheng
    Abstract:
    The properties of evaporated aluminum-oxide films were investigated. The characteristics of MOS devices made with single-layer aluminum-oxide films and double-layer films which were made by evaporating aluminum oxide over thermally-grown silicon dioxide as gate insulation have been investigated. Vacuum-evaporated aluminum oxide has features which are suitable for fabricating MOS devices....
    Resource Type:
    Masters Thesis
    Full Text:
    TRANSISTORS Abstract approved: James C. Looney The properties of evaporated aluminum-oxide films Redacted

  • Influence of surface fields on shallow planar-junction breakdown voltages

    Creator:
    Kim, Sŭng-yŏng
    Abstract:
    The influence of surface fields on the breakdown voltage is studied experimentally for p⁺-n silicon diodes with a junction depth of 0.5μ in order to improve the curvature- limited breakdown of the diffused, shallow-collector junction of a microwave transistor. Devices with a gap in the gate metal electrode are also...
    Resource Type:
    Masters Thesis
    Full Text:
    SHALLOW PLANAR JUNCTION BREAKDOWN VOLTAC4ES Redacted for Privacy Abstract approved: James C. fodhey -A

  • Deterioration of gallium arsenide diodes

    Creator:
    Matsuo, Samuel Seiji
    Abstract:
    Changes in the diode characteristics of three different types of diodes were studied. These were point-contact, bonded and zinc-diffused diodes. The parameters in which measurable changes were observed were the forward resistance, the reverse breakdown voltage, the forward "knee" of the diode curve and the constant of proportionality relating the...
    Resource Type:
    Masters Thesis
    Full Text:
    varied from -1/2.3 to V -1/3.7 for diffused diodes. This indicates that the type of junction changed

  • The MOS tetrode transistor

    Creator:
    Limvorapun, Thawee
    Abstract:
    The MOS tetrode transistor is studied in this project. This device is ideally suited for high frequency and switching application. In effect it is the solid state analogy of a multigrid vacuum tube performing a very useful multigrid function. A new structure is developed for p-channel 10 ohm-cm. silicon substrate...
    Resource Type:
    Masters Thesis
    Full Text:
    Abstract approved: James C. Lodriey The MOS tetrode transistor is studied in this project. This device

  • Vacuum evaporated dielectrics in MOS structures

    Creator:
    Delzer, Dennis Richard
    Abstract:
    Vacuum evaporated dielectrics for use in MOS structures were studied in this research project. Dielectric films were deposited on substrates by electron bombardment evaporation of sapphire and quartz source materials. These deposited films were studied using infrared spectroscopy, index of refraction, density, and dielectric constant measurements. Etching tests were also...
    Resource Type:
    Dissertation
    Full Text:
    DIELECTRICS IN MOS STRUCTURES Abstract approved: Redacted for privacy James C. Looney Vacuum evaporated

  • An integrated MOS addressing circuit

    Creator:
    Chang, Ki Suk
    Abstract:
    This paper is a study of the design of an integrated MOS addressing circuit by using the modified two-phase dynamic shift register. This modified circuit is compared to the conventional two-phase dynamic SR and discussed briefly. The resulting circuit shows several advantages to improve the essential conditions of integrated circuit...
    Resource Type:
    Masters Thesis
    Full Text:
    Abstract approved: James C. Looney This paper is a study of the design of an integrated MOS ad- dressing

  • A MOSFET integrated circuit shift register

    Creator:
    Chen, David Wei
    Abstract:
    This paper is concerned with the design of a 21-bit metal-oxide-semiconductor field-effect transistor (MOSFET) integrated circuit static shift register. This circuit consists of three separate 1, 4, and 16-bit static shift registers constructed on a single monolithic chip, each with independent input and output terminals. Type D flip-flops are used...
    Resource Type:
    Masters Thesis
    Full Text:
    ACKNOWLEDGMENT I wish to extend my sincere appreciation to Professor James C. Looney, major professor, and Mr

  • An integrated MOS voltage-controlled low frequency oscillator

    Creator:
    Araghi, Mehdi Najm
    Abstract:
    In this work the use of linear MOS integrated circuits in the design of a phase-shift oscillator is presented. By multiplying the capacitors of the RC feedback network through the use of the Miller effect, large effective capacitance values are obtained which enable the low frequency operation of the oscillator....
    Resource Type:
    Masters Thesis
    Full Text:
    FREQUENCY OSCILLATOR Redacted for Privacy Abstract approved: James C. Looney In this work the use of

  • Impedance bridge balancing using perturbation theory

    Creator:
    Sternes, Kenneth James
    Abstract:
    This paper describes a technique for separating the two signal voltages which are necessary for balancing an ac impedance bridge from its detector output voltage. The technique is unique in that the necessary information is derived from modulations on the generator voltage. These modulations are formed by perturbing the variable...
    Resource Type:
    Masters Thesis
    Full Text:
    Kenneth James Sternes for the Master of Science in Department of Electrical and Electronics Engineering

  • A complementary MOS random-access-memory cell wth double-diffused MOS transistors

    Creator:
    Tao, David Ming-Shih
    Abstract:
    The use of double-diffused n-type MOS transistor (DN-MOS) in a complementary MOS random-access-memory (CMOS RAM) cell is the main objective of this investigation. DN-MOS transistors and conventional p-channel MOS transistors on the same chip have been successfully fabricated. Process sequence effects on device threshold voltage and channel length are discussed....
    Resource Type:
    Dissertation
    Full Text:
    Abstract approved: Redacted for privacy 7' James C. Looney r. LJ The use of double-diffused n-type MOS