Index Catalog // ScholarsArchive@OSU

Determining thickness of zinc sulfide thin films through optical spectroscopy

Creator:: Prudell, Kathleen
Abstract:: A method has been developed to measure the thickness of ZnS thin films on Si using optical interference. Thin film optical interference fringes are dependent upon the thickness of the film, and for this reason the thickness can be determined by measuring reflectance spectrum of a thin film. A grating...
Resource Type:: Undergraduate Thesis

Detecting ZnS Thin Films on Si Substrates using X-Ray Diffraction

Creator:: Howorth, Benjamin
Abstract:: The goal of this research is to determine whether x-ray diffraction (XRD) is a viable method for resolving ZnS thin films on Si substrates. The samples are ZnS thin films of thickness between 50nm and 100nm, on Si substrates that are 0.5mm thick. ZnS and Si have nearly identical lattice...
Resource Type:: Undergraduate Thesis

Measurement and Modeling of Zinc Sulfide Thin Films using Ellipsometry and Reflection Spectroscopy : A Comparison of Optical Characterization Techniques

Creator:: Kratzer, Aaron and Kratzer, Aaron C.
Abstract:: Zinc sulfide thin films on silicon wafers were analyzed for layer thickness, refractive index, and absorption using reflection spectroscopy (RS), spectroscopic ellipsometry (SE), and modeling programs. RS and refractive index values from literature were used to model film thickness based on reflection and the SCOUT modeling program was used to...
Resource Type:: Undergraduate Thesis

Observation of the third harmonic sinusoidal voltage response of a small incandescent lightbulb

Creator:: Hutchings, Scott
Abstract:: This thesis looks at the third harmonic voltage response of a small incandescent lightbulb. The third harmonic voltage, or 3 omega (3ω) voltage, arises from applying a 1ω sinusoidal voltage across a resistive material. The 3ω voltage carries with it information about the thermal conductivity of the material. A lock-in-amplifier...
Resource Type:: Presentation and Undergraduate Thesis

Temperature Dependence of Cu₃₋xSb₁₋[subscript y]M[subscript y]S₄ (M=Sn,Ge) Resistivity and Thermopower

Creator:: Mutch, Joshua
Abstract:: An experimental apparatus is modified to allow measurements of the Seebeck coefficient and resistivity to be taken simultaneously. This apparatus is designed for bulk and thin film samples between temperatures of 10 K and 300 K. The apparatus is constructed such that these simultaneous measurements do not interfere with each...
Resource Type:: Undergraduate Thesis

Electrical Transport Measurements on the Alloy Sn₁-ₓCaₓSe

Creator:: Stahly, Joshua
Abstract:: Hall measurements can be made on the unstudied alloy, Sn₁-ₓCaₓSe to determine its electrical transport properties. The Sn₁-ₓCaₓSe samples were made by laser deposition into thin films and have a variable of calcium concentration x. These samples are approximately 250 nm in thickness, were grown at 366° C and are...
Resource Type:: Undergraduate Thesis

Thermoelectric Properties of the HeterostructuralAlloy Sn_(1-x)Ca_(x)Se

Creator:: Forkner, MIchael
Abstract:: By alloying face centered cubic CaSe with orthorhombic SnSe, we created the heterostructural alloy Sn1-xCaxSe. The phase separated lms created with a high deposition temperature acted as highly crys- talline SnSe while the low deposition temperature lms acted as a mix of SnSe and CaSe. For the alloyed lms we...
Resource Type:: Undergraduate Thesis

Repair of a Scanning Tunneling Microscope and Retesting for the Formation of Pyramidal Structures Formed on Sputtered Germanium (110)

Creator:: Betz, Hazel R.
Abstract:: Semiconducting materials are of immense importance due to their presence in almost all modern devices. It is possible that the surface physics of semiconductors could be used to control the nanoscale topography and properties of these materials, ultimately creating new options for device fabrication. This could result in profound implications...
Resource Type:: Undergraduate Thesis
Date Created:

Optical Analysis of Titania : Band Gaps of Brookite, Rutile and Anatase

Creator:: Lance, Ryan A.
Abstract:: The optical transition in high-fraction polymorphs of titania (TiO2) were investigated to determine the band gap behavior of the most common polymorphs—brookite, rutile, and anatase—the values of which are varied in the literature. The direct optical band gaps of brookite, rutile, and anatase, were determined to be 3.37(7)eV, 3.41(11)eV and...
Resource Type:: Undergraduate Thesis

Variable Temperature Transport Measurements and Conduction Mechanisms of Crystalline and Amorphous Titanium Dioxide Thin Films

Creator:: Patterson, Acacia M.
Abstract:: The electrical properties of amorphous and crystalline titanium dioxide polymorphs are reported. Titanium dioxide is a widely used transparent semiconductor and it is a useful oxide model. Using variable temperature transport measurements of thin films, it was possible to establish the activation energy barrier for conduction. This was accomplished using...
Resource Type:: Undergraduate Thesis

ScholarsArchive@OSU

Determining thickness of zinc sulfide thin films through optical spectroscopy

Detecting ZnS Thin Films on Si Substrates using X-Ray Diffraction

Measurement and Modeling of Zinc Sulfide Thin Films using Ellipsometry and Reflection Spectroscopy : A Comparison of Optical Characterization Techniques

Observation of the third harmonic sinusoidal voltage response of a small incandescent lightbulb

Temperature Dependence of Cu₃₋xSb₁₋[subscript y]M[subscript y]S₄ (M=Sn,Ge) Resistivity and Thermopower

Electrical Transport Measurements on the Alloy Sn₁-ₓCaₓSe

Thermoelectric Properties of the HeterostructuralAlloy Sn_(1-x)Ca_(x)Se

Repair of a Scanning Tunneling Microscope and Retesting for the Formation of Pyramidal Structures Formed on Sputtered Germanium (110)

Optical Analysis of Titania : Band Gaps of Brookite, Rutile and Anatase

Variable Temperature Transport Measurements and Conduction Mechanisms of Crystalline and Amorphous Titanium Dioxide Thin Films

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