Thin films of wide band-gap semiconductors are deposited by the pulsed laser deposition method. Optimal deposition parameters for the individual compounds are reported. A family of p-type BaCuQF (Q = S, Se, Te) ceramics with a layered crystalline structure is investigated for active and passive device applications.
Epitaxial films of...
Bulk properties of CuSc₁₋ₓMgₓO₂, CuSc₁₋ₓMgₓO₂₊y, BaCu₂S₂, Bai₁₋ₓKCu₂S₂, BaCu₂Se₂
and Bai₁₋ₓKₓCu₂Se₂ are investigated supporting the search for highly conductive p-type
thin films. Mg is an efficient dopant in CuScO₂ with conductivity up to l.5.10⁻² S/cm.
Oxidation of CuScO₂:Mg leads to further increase in conductivity up to 0.5 S/cm. The
amount of...
An experimental apparatus is modified to allow measurements of the Seebeck coefficient and resistivity to be taken simultaneously. This apparatus is designed for bulk and thin film samples between temperatures of 10 K and 300 K. The apparatus is constructed such that these simultaneous measurements do not interfere with each...
This thesis presents basic studies, including structural, optical and transport measurements, on novel chalcogenide powders and single crystals. BiCuOSe crystals have been synthesized for the first time. The crystal structure of BiCuOSe has been refined and the optical band gap has been measured to be 0.83eV. Crystal structure refinements of...
BaCuChF (Ch = S, Se, Te) materials are chalcogen-based transparent conductors with wide optical band gaps (2.9 – 3.5 eV) and a high concentration of free holes (10¹⁸ – 10²⁰ cm⁻³) caused by the presence of copper vacancies. Chalcogen vacancies compensate copper vacancies in these materials, setting the Fermi level...