Index Catalog // ScholarsArchive@OSU

Assessment of High Mobility Oxide Thin-Film Transistors

Creator:: Stewart, Kevin A.
Abstract:: The trend towards higher resolution, faster refresh rate active-matrix liquid-crystal displays (AMLCDs) as well as the emergence of active-matrix organic light-emitting diode (AMOLED) displays is driving the demand for amorphous oxide semiconductor thin-film transistors (AOS TFTs) with higher mobility. A physics-based model for carrier transport in an amorphous semiconductor is...
Resource Type:: Dissertation

DC/AC Stability of In-Ga-Zn-O Thin-Film Transistors

Creator:: Zhou, Fan
Abstract:: The electrical stability of amorphous indium-gallium-zinc oxide (a-IGZO) thinfilmtransistors (TFTs) is investigated for flat-panel display applications. Althoughproducts incorporating a-IGZO TFT backplanes are already commercially available,e.g., iMac with 5K retina display, technical challenges need to be addressed for nextgenerationapplications, e.g., active-matrix organic light-emitting diode displays.Device stability is one crucial issue. The...
Resource Type:: Dissertation

Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

Creator:: McGlone, John M.
Abstract:: Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
Resource Type:: Dissertation

Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

Creator:: Chiang, Tsung-Han
Abstract:: The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-ﬁlm transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a ﬁxed set of...
Resource Type:: Masters Thesis

Al-In-Sn-O thin-film transistors

Creator:: Stewart, Kevin A.
Abstract:: The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
Resource Type:: Masters Thesis

Amorphous metal thin films as a platform for solution processing

Creator:: Landau, Nicholas P.
Abstract:: The research presented herein represents an effort to combine the ultra-smooth surface of an amorphous metal thin ﬁlm (AMTF) with a solution-processed dielectric synthesized via prompt inorganic condensation (PIC). Analysis of dielectric ﬁlm quality is carried out via electrical measurements of metal-insulator-metal (MIM) diodes. Anneals at 500 and 700 °C...
Resource Type:: Masters Thesis

Development of high efficiency solar absorbers

Creator:: Ravichandran, Ram
Abstract:: Current cadmium telluride and copper indium gallium diselenide thin-film solar cells (TFSCs) utilize thick absorbers (2 - 4 μm). For efficient carrier extraction in these TFSCs, the absorber layer requires high carrier mobilities and a long minority carrier lifetime, which necessitates the use of a high purity, defect-free thin film....
Resource Type:: Dissertation

Thermally-stable amorphous metal thin films

Creator:: McGlone, John M.
Abstract:: Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess...
Resource Type:: Masters Thesis

Diamond-like carbon films for electroluminescent applications

Creator:: Kim, Seung-bae
Abstract:: White electroluminescence (EL) was observed for the first time from diamond-like carbon (DLC) films at room temperature. Electroluminescence was observed by the application of ac voltages in excess of 200 V to a metal-insulator- semiconductor (i.e. DLC)-insulator-metal (MISIM) device structure. For EL applications, three types of the DLC films were...
Resource Type:: Masters Thesis

Atomic solid state energy scale applied to novel thin-film solar absorbers

Creator:: Pelatt, Brian D.
Abstract:: The atomic solid state energy (SSE) scale is introduced as a tool for inorganic materials design. The SSE scale is obtained by assessing an average electron affinity (EA) (for a cation) or an average ionization potential (IP) (for an anion) for each atom using data from compounds having that specific...
Resource Type:: Dissertation

Instabilities in InP MIS capacitors

Creator:: Juang, Min Tzuan
Abstract:: The drain current of InP MISPETs is often observed to decrease as a function of time after the application of a positive gate bias which involves an accumulation of electrons in the channel. Various models have been proposed for this drain current drift (DCD) phenomenon. In this thesis, variable-temperature bias-stress...
Resource Type:: Masters Thesis

Surface recombination velocity and bulk lifetime in GaAs and InP

Creator:: Rastegar, Bahador
Abstract:: An analytical expression is derived which allows the bulk minority carrier recombination lifetime, t, and the surface recombination velocity, S, to be extracted from a single noncontact photoconductivity decay (PCD) measurement. This analytical expression is rather complex, but can be reduced to a first order approximation. The first order approximation...
Resource Type:: Masters Thesis

Improved stability in ACTFEL devices

Creator:: Khormaei, Iranpour
Abstract:: The stability of ZnS:Mn AC thin film Electroluminescence (ACEFEL) devices as demonstrated by the brightness-voltage (BV) characteristics is discussed. Two procedures for improvement of the stability are demonstrated. The first method is the addition of a CaS buffer layer to one or both interfaces of the ZnS active phosphor layer....
Resource Type:: Masters Thesis

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Creator:: Kamdar, Pravin P.
Resource Type:: Masters Thesis

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Creator:: Huang, Chun-ta
Abstract:: A study of deep levels of the emitter region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy (DLTS), deep level admittance spectroscopy (DLAS), thermally stimulated capacitance (TSCAP), and capacitance-voltage (C-V) profiling. The DX center, with an activation energy of 0.45 eV, is the only deep level...
Resource Type:: Masters Thesis

Electrical characterization of n-type aluminum gallium arsenide

Creator:: Kim, Seung-bae
Resource Type:: Dissertation

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Creator:: Abu-Dayah, Ahmad I.
Resource Type:: Masters Thesis

Design, fabrication, and testing of inhomogeneous dielectrics

Creator:: Lim, Sungkyoo
Abstract:: In this thesis the concept of inhomogeneous dielectrics is demonstrated for various optical coating applications. Compositionally-varying silicon oxynitride (SiON) dielectric layers, with the refractive index varying as a function of position, are grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. Compositionally graded...
Resource Type:: Dissertation

Alternating-current thin-film electroluminescent device physics and modeling

Creator:: Douglas, Allan A.
Abstract:: Alternating-current thin-film electroluminescent (ACTFEL) devices are used in the formation of pixels in flat panel displays. ACTFEL flat panel displays have many advantages over other flat panel technologies. Specifically, ACTFEL panels are emissive displays, they have high brightness, wide viewing angles, and rugged construction. Although much is already known about...
Resource Type:: Masters Thesis

Phosphor development for alternating-current thin-film electroluminescent applications

Creator:: Nguyen, Tin T.
Resource Type:: Masters Thesis

ScholarsArchive@OSU

Assessment of High Mobility Oxide Thin-Film Transistors

DC/AC Stability of In-Ga-Zn-O Thin-Film Transistors

Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

Al-In-Sn-O thin-film transistors

Amorphous metal thin films as a platform for solution processing

Development of high efficiency solar absorbers

Thermally-stable amorphous metal thin films

Diamond-like carbon films for electroluminescent applications

Atomic solid state energy scale applied to novel thin-film solar absorbers

Instabilities in InP MIS capacitors

Surface recombination velocity and bulk lifetime in GaAs and InP

Improved stability in ACTFEL devices

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Electrical characterization of n-type aluminum gallium arsenide

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Design, fabrication, and testing of inhomogeneous dielectrics

Alternating-current thin-film electroluminescent device physics and modeling

Phosphor development for alternating-current thin-film electroluminescent applications

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