The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel
MOSFETs under static (DC) stress are studied in order to establish the degradation
mechanisms of such devices. Degradation is monitored as a function of time at various
gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate
voltage...
The objective of this dissertation is to introduce low-cost processing methods for the fabrication of ZnO transparent thin-film transistors (TTFTs). A novel method for depositing ZnO body layers via spin-coating of a zinc nitrate-based spin solution is presented. The processing conditions of spin-coated ZnO are optimized to produce continuous and...
In this thesis steady-state (i.e. steady-state with respect to the applied voltage waveform) transient current-transient voltage [i(t)-v(t)], transient brightness-transient current [b(t)-i(t)], transient brightness-transient voltage [b(t)-v(t)], transient current [i(t)], transient brightness [b(t)], and detrapped charge analysis are introduced as novel organic light emitting device (OLED) characterization methods. These analysis methods involve...
The research presented herein represents an effort to combine the ultra-smooth surface of an amorphous metal thin film (AMTF) with a solution-processed dielectric synthesized via prompt inorganic condensation (PIC). Analysis of dielectric film quality is carried out via electrical measurements of metal-insulator-metal (MIM) diodes. Anneals at 500 and 700 °C...
The trend towards higher resolution, faster refresh rate active-matrix liquid-crystal displays (AMLCDs) as well as the emergence of active-matrix organic light-emitting diode (AMOLED) displays is driving the demand for amorphous oxide semiconductor thin-film transistors (AOS TFTs) with higher mobility. A physics-based model for carrier transport in an amorphous semiconductor is...
The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
Alternating-current thin-film electroluminescent (ACTFEL) devices are used in the
formation of pixels in flat panel displays. ACTFEL flat panel displays have many
advantages over other flat panel technologies. Specifically, ACTFEL panels are emissive
displays, they have high brightness, wide viewing angles, and rugged construction.
Although much is already known about...
The stability of ZnS:Mn AC thin film Electroluminescence (ACEFEL)
devices as demonstrated by the brightness-voltage (BV)
characteristics is discussed. Two procedures for improvement of the
stability are demonstrated. The first method is the addition of a
CaS buffer layer to one or both interfaces of the ZnS active phosphor
layer....