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Filtering by: Creator Dillon, T. M. (Thomas M.) Remove constraint Creator: Dillon, T. M. (Thomas M.) Advisor Wager, John F. Remove constraint Advisor: Wager, John F.

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  • Contact resistance and stability assessment of oxide-based thin film transistors

    Creator:
    Hung, Celia M.
    Abstract:
    This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment. First, determination of the contact resistance of indium tin oxide (ITO) on two wide-band gap semiconductors, zinc oxide (ZnO) and indium gallium oxide (IGO), is attempted and the effects of contact resistance on device...
    Resource Type:
    Masters Thesis
    Full Text:
    . ©Copyright by Celia M. Hung September 19, 2006 All Rights Reserved Contact Resistance and

  • High resolution electroluminescent display using active matrix approach

    Creator:
    Khormaei, Iranpour
    Resource Type:
    Dissertation
    Full Text:
    have been possible. I would like to thank Dr. Thomas Plant, Dr. Jack Kenney, and Dr. Robert Burton for

  • ACTFEL phosphor deposition by RF sputtering

    Creator:
    Ang, Wie Ming
    Resource Type:
    Masters Thesis
    Full Text:
    speed of the atom is, 4/TC1118kT (1) where k is Boltzmann's constant, T is temperature, and m is

  • Development of high efficiency solar absorbers

    Creator:
    Ravichandran, Ram
    Abstract:
    Current cadmium telluride and copper indium gallium diselenide thin-film solar cells (TFSCs) utilize thick absorbers (2 - 4 μm). For efficient carrier extraction in these TFSCs, the absorber layer requires high carrier mobilities and a long minority carrier lifetime, which necessitates the use of a high purity, defect-free thin film....
    Resource Type:
    Dissertation
    Full Text:
    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 165 6.2 Tetrahedrites - Cu10M2Sb4Ch13 (M = Cu, Mn, Zn, Al, In; Ch = S, Se) . . . . 170 6.2.1

  • A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

    Creator:
    Huang, Chun-ta
    Abstract:
    A study of deep levels of the emitter region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy (DLTS), deep level admittance spectroscopy (DLAS), thermally stimulated capacitance (TSCAP), and capacitance-voltage (C-V) profiling. The DX center, with an activation energy of 0.45 eV, is the only deep level...
    Resource Type:
    Masters Thesis
    Full Text:
    actually constitute the admittance spectroscopy data. 8.0e-7 m U (t 2.Oe -7 ­o U 0.0e+0 1 ,1 . 0

  • Inorganic thin-film solar cells

    Creator:
    Spies, Jack Alexander
    Abstract:
    The primary objective of this thesis is to explore new absorber and p-type window layer materials for thin-film solar cell applications. A new thin-film electron beam deposition system has been installed, is now operational, and has been used to deposit several types of solar cell absorber layers. Material investigations include...
    Resource Type:
    Masters Thesis
    Full Text:
    diagrams for a metal and a p-type semiconductor with ΦM < ΦS . . . 96 5.16 Energy band diagrams for a

  • Physical vapor deposition of novel thin-film solar absorbers

    Creator:
    Waters, Benjamin E.
    Abstract:
    Current leading thin-film solar cell technologies, i.e., cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS), employ elements which are either toxic (Cd), or rare and/or expensive (In, Te, Ga, and Cd). The aim of this thesis is to investigate new, abundant, non-toxic p-type semiconductors for potential solar absorber application....
    Resource Type:
    Masters Thesis
    Full Text:
    electron at EC from the semiconductor. Similarly, the work-function of a material (qφM for a metal and qφS

  • Nontraditional amorphous oxide semiconductor thin-film transistor fabrication

    Creator:
    Sundholm, Eric Steven
    Abstract:
    Fabrication techniques and process integration considerations for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this dissertation. Within this theme three primary areas of focus are pursued. The first focus involves formulating a general framework for assessing passivation. Avoiding formation of an undesirable backside accumulation layer...
    Resource Type:
    Dissertation
    Full Text:
    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 130 6.13 Printed TFT channels using 0.16 M ZIAO

  • Transparent electronics : thin-film transistors and integrated circuits

    Creator:
    Presley, Rick E.
    Abstract:
    This thesis focuses on two aspects of transparent electronics, SnO₂ transparent thin-film transistors (TTFTs) and transparent circuits. Both depletion- and enhancement-mode SnO₂ TTFTs are realized. The maximum effective mobility for the depletion- and enhancement-mode devices are 2 cm²V⁻¹s⁻¹ and 0.8 cm²V⁻¹s⁻¹, respectively. A variety of techniques to decrease the carrier...
    Resource Type:
    Masters Thesis
    Full Text:
    reflectance, i.e., T / (1 - R), whereas curve (b) is the raw transmission through the entire stack

  • Surface recombination velocity and bulk lifetime in GaAs and InP

    Creator:
    Rastegar, Bahador
    Abstract:
    An analytical expression is derived which allows the bulk minority carrier recombination lifetime, t, and the surface recombination velocity, S, to be extracted from a single noncontact photoconductivity decay (PCD) measurement. This analytical expression is rather complex, but can be reduced to a first order approximation. The first order approximation...
    Resource Type:
    Masters Thesis
    Full Text:
    is, m dp/dtlt dp/dt10 < t < td (3.1) where dp/dti t > td and dp/dt1 0 < t < td are