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Filtering by: Creator Edge, W. Daniel Remove constraint Creator: Edge, W. Daniel Advisor Wager, John F. Remove constraint Advisor: Wager, John F.

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  • Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

    Creator:
    McGlone, John M.
    Abstract:
    Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
    Resource Type:
    Dissertation
    Full Text:
    200 nm deposited at 100 W RF power and 10 mTorr, and (b) a Ta thin film provided by HP Inc

  • Inorganic thin-film solar cells

    Creator:
    Spies, Jack Alexander
    Abstract:
    The primary objective of this thesis is to explore new absorber and p-type window layer materials for thin-film solar cell applications. A new thin-film electron beam deposition system has been installed, is now operational, and has been used to deposit several types of solar cell absorber layers. Material investigations include...
    Resource Type:
    Masters Thesis
    Full Text:
    . . . . . . . . . . . . . . . . . . . . . . . 65 4.12 A design showing the atmosphere side and edge of the new sputter gun flange. . . . . 65 5.1

  • Instability and temperature-dependence assessment of IGZO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
    Resource Type:
    Masters Thesis
    Full Text:
    other group members, namely Rick Presley, Eric Sundholm, Brian McFarlene, Daniel Heineck, Richard

  • Electronic Conduction Mechanisms in Insulators

    Creator:
    Chiang, Tsung-Han
    Abstract:
    The research presented herein focuses on electrical assessment of oxide thin films as insulators. The current density-electric field (J-E) characteristics of four insulators of dramatically different electrical quality are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and...
    Resource Type:
    Dissertation
    Full Text:
    Rodriguez, Daniel and Katie Leonard, Jason Muhlestein, Ratanak So, Ryan Mansergh, Kevin Stewart, Mengjun Li

  • Development of oxide semiconductors : materials, devices, and integration

    Creator:
    Chiang, Hai Q.
    Abstract:
    The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
    Resource Type:
    Dissertation
    Full Text:
    hand that made the day run smoother. Brian McFarlane, Celia Hung, and Daniel Heineck helped run

  • DC/AC Stability of In-Ga-Zn-O Thin-Film Transistors

    Creator:
    Zhou, Fan
    Abstract:
    The electrical stability of amorphous indium-gallium-zinc oxide (a-IGZO) thinfilmtransistors (TFTs) is investigated for flat-panel display applications. Althoughproducts incorporating a-IGZO TFT backplanes are already commercially available,e.g., iMac with 5K retina display, technical challenges need to be addressed for nextgenerationapplications, e.g., active-matrix organic light-emitting diode displays.Device stability is one crucial issue. The...
    Resource Type:
    Dissertation
    Full Text:
    state is located at 0.25 eV below the conduction band mobility edge, with a characteristic energy width

  • Zinc tin oxide thin-film transistor current mirror circuits

    Creator:
    Feller, Layannah Elizabeth
    Abstract:
    The central focus of this thesis is the design, fabrication and characterization of amorphous oxide semiconductor (AOS) thin-film transistor (TFT) current mirrors. The thin-film deposition and circuit fabrication methods used to realize zinc tin oxide (ZTO) TFT current mirrors are addressed in order to elucidate the processing challenges for this...
    Resource Type:
    Masters Thesis
    Full Text:
    sputter sys- tem and the CPA sputter system. Both TFTs have a W/L of 10. The TFT fabricated in the AJA

  • Alternating-current thin-film electroluminescent device physics and modeling

    Creator:
    Douglas, Allan A.
    Abstract:
    Alternating-current thin-film electroluminescent (ACTFEL) devices are used in the formation of pixels in flat panel displays. ACTFEL flat panel displays have many advantages over other flat panel technologies. Specifically, ACTFEL panels are emissive displays, they have high brightness, wide viewing angles, and rugged construction. Although much is already known about...
    Resource Type:
    Masters Thesis
    Full Text:
    : Dr. John F. W e r Alternating-current thin-film electroluminescent (ACTFEL) devices are used in the

  • Manufacture and characterization of novel ACTFEL materials and devices

    Creator:
    Bender, Jeffrey P.
    Abstract:
    The aim of this dissertation is to develop non-traditional approaches to alternating-current thin-film electroluminescent (ACTFEL) device fabrication. ACTFEL technology suffers from a lack of adequately bright and efficient primary-color phosphors and cannot presently compete in the low-cost display market. Therefore the research presented in this dissertation focuses on an exploration...
    Resource Type:
    Dissertation
    Full Text:
    ..................................... 46 2.19 1931 CIE chromaticity coordinates specify color almost completely. Point W on the diagram

  • Electrical characterization of n-type aluminum gallium arsenide

    Creator:
    Kim, Seung-bae
    Resource Type:
    Dissertation
    Full Text:
    dislocation networks due to glide after processing with an optical power density of approximately 9 x 104 W