Index Catalog // ScholarsArchive@OSU

Diamond-like carbon films for electroluminescent applications

Creator:: Kim, Seung-bae
Abstract:: White electroluminescence (EL) was observed for the first time from diamond-like carbon (DLC) films at room temperature. Electroluminescence was observed by the application of ac voltages in excess of 200 V to a metal-insulator- semiconductor (i.e. DLC)-insulator-metal (MISIM) device structure. For EL applications, three types of the DLC films were...
Resource Type:: Masters Thesis
Full Text:: submitted to Oregon State University in partial fulfillment of the requirements for the degree of Master

Instabilities in InP MIS capacitors

Creator:: Juang, Min Tzuan
Abstract:: The drain current of InP MISPETs is often observed to decrease as a function of time after the application of a positive gate bias which involves an accumulation of electrons in the channel. Various models have been proposed for this drain current drift (DCD) phenomenon. In this thesis, variable-temperature bias-stress...
Resource Type:: Masters Thesis
Full Text:: MIS CAPACITORS by Min Tzuan Juang A THESIS submitted to Oregon State University in partial

Surface recombination velocity and bulk lifetime in GaAs and InP

Creator:: Rastegar, Bahador
Abstract:: An analytical expression is derived which allows the bulk minority carrier recombination lifetime, t, and the surface recombination velocity, S, to be extracted from a single noncontact photoconductivity decay (PCD) measurement. This analytical expression is rather complex, but can be reduced to a first order approximation. The first order approximation...
Resource Type:: Masters Thesis
Full Text:: Bahador Rastegar A THESIS submitted to Oregon State University in partial fulfillment of the

Improved stability in ACTFEL devices

Creator:: Khormaei, Iranpour
Abstract:: The stability of ZnS:Mn AC thin film Electroluminescence (ACEFEL) devices as demonstrated by the brightness-voltage (BV) characteristics is discussed. Two procedures for improvement of the stability are demonstrated. The first method is the addition of a CaS buffer layer to one or both interfaces of the ZnS active phosphor layer....
Resource Type:: Masters Thesis
Full Text:: State University in partial fulfillment of the requirements for the degree of Master of Science

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Creator:: Kamdar, Pravin P.
Resource Type:: Masters Thesis
Full Text:: . Kamdar A THESIS submitted to Oregon State University in partial fulfillment of the requirements for

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Creator:: Huang, Chun-ta
Abstract:: A study of deep levels of the emitter region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy (DLTS), deep level admittance spectroscopy (DLAS), thermally stimulated capacitance (TSCAP), and capacitance-voltage (C-V) profiling. The DX center, with an activation energy of 0.45 eV, is the only deep level...
Resource Type:: Masters Thesis
Full Text:: Oregon State University in partial fulfillment of the requirements for the degree of Master of

Electrical characterization of n-type aluminum gallium arsenide

Creator:: Kim, Seung-bae
Resource Type:: Dissertation
Full Text:: submitted to Oregon State University in partial fulfillment of the requirements for the degree of Doctor

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Creator:: Abu-Dayah, Ahmad I.
Resource Type:: Masters Thesis
Full Text:: Devices by Ahmad I. Abu-Dayah A THESIS submitted to Oregon State University in partial fulfillment

Design, fabrication, and testing of inhomogeneous dielectrics

Creator:: Lim, Sungkyoo
Abstract:: In this thesis the concept of inhomogeneous dielectrics is demonstrated for various optical coating applications. Compositionally-varying silicon oxynitride (SiON) dielectric layers, with the refractive index varying as a function of position, are grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. Compositionally graded...
Resource Type:: Dissertation
Full Text:: Sungkyoo Lim A THESIS submitted to Oregon State University in partial fulfillment of the requirements

Alternating-current thin-film electroluminescent device physics and modeling

Creator:: Douglas, Allan A.
Abstract:: Alternating-current thin-film electroluminescent (ACTFEL) devices are used in the formation of pixels in flat panel displays. ACTFEL flat panel displays have many advantages over other flat panel technologies. Specifically, ACTFEL panels are emissive displays, they have high brightness, wide viewing angles, and rugged construction. Although much is already known about...
Resource Type:: Masters Thesis
Full Text:: Device Physics and Modeling by Allan A. Douglas A THESIS submitted to Oregon State University in

ScholarsArchive@OSU

Diamond-like carbon films for electroluminescent applications

Instabilities in InP MIS capacitors

Surface recombination velocity and bulk lifetime in GaAs and InP

Improved stability in ACTFEL devices

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Electrical characterization of n-type aluminum gallium arsenide

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Design, fabrication, and testing of inhomogeneous dielectrics

Alternating-current thin-film electroluminescent device physics and modeling

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