Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel
MOSFETs under static (DC) stress are studied in order to establish the degradation
mechanisms of such devices. Degradation is monitored as a function of time at various
gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate
voltage...
In this report, the optical characteristics of ZnS:Tb AC driven thin-film
electroluminescent devices are evaluated. Luminescence at low and room temperature
under a constant phosphor field is recorded in order to probe the hot electron energy
distribution. Samples fabricated by atomic layer epitaxy and by sputter deposition are
investigated and...