Index Catalog // ScholarsArchive@OSU

Creator:: Walenza-Slabe, Joel
Abstract:: Solid solutions based on the perovskite ferroelectrics Bi₀.₅Na₀.₅TiO₃ (BNT) and Bi₀.₅K₀.₅TiO₃ (BKT) might someday replace current Pb-based ferroelectric and piezoelectric devices. This is one goal of the Restrictions on Hazardous Substances (RoHS) guidelines seeking to limit Pb in consumer devices. Although the Bi-based ferroelectrics are well suited to the task...
Resource Type:: Dissertation
Full Text:: .....………................…………………………… 4 2.1 Review of ferroelectric thin films ...... …………………………………..…4 2.1.1 Perovskite

Creator:: Jiang, Kai
Abstract:: Crystals of an incongruent-melting compound, Ba₃MgSi₂O₈, were grown by the flux method and its structure was determined by single crystal X-ray diffraction methods. Ba₃MgSi₂O₈ crystallizes in trigonal space group P-3[bar]m1 with a = 5.6123(3) Å, c = 7.2667(9) Å and Z = 1. Eu²⁺ ions prefer one crystallographic Ba site...
Resource Type:: Dissertation
Full Text:: , microcavities, capacitors, and thin-film transistors (TFTs). The control over film thickness to a single

Creator:: Feller, Layannah Elizabeth
Abstract:: The central focus of this thesis is the design, fabrication and characterization of amorphous oxide semiconductor (AOS) thin-film transistor (TFT) current mirrors. The thin-film deposition and circuit fabrication methods used to realize zinc tin oxide (ZTO) TFT current mirrors are addressed in order to elucidate the processing challenges for this...
Resource Type:: Masters Thesis
Full Text:: . Title: Zinc Tin Oxide Thin-Film Transistor Current Mirror Circuits Abstract approved: John F. Wager

Creator:: Platt, Heather A. S.
Abstract:: This dissertation outlines two approaches for improving the efficiency and reducing the cost of photovoltaic energy generation. First, the structures of known binary copper and iron compounds are used to choose the promising compositions Fe₂XS₄ (X = Si, Ge), Cu₃TaQ₄ (Q = Se, Te), and BaCuQ'F (Q' = S, Se,...
Resource Type:: Dissertation
Full Text:: Precursor synthesis ........................................................ 41 3.2.2 Thin film preparation

Creator:: Jeon, Yu Hong
Abstract:: Piezoelectric materials have been widely used in electromechanical actuators, sensors, and ultrasonic transducers. Among these materials, lead zirconate titanate Pb(Zr[subscript 1‐x]Ti[subscript x])O₃ (PZT) has been primarily investigated due to its excellent piezoelectric properties. However, environmental concerns due to the toxicity of PbO have led to investigations into alternative materials systems....
Resource Type:: Dissertation
Full Text:: , 2012.  Title: Development of Bi‐based Lead‐free Piezoelectric Materials: Thin Film  Piezoelectric

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