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  • New luminescent materials and high-performance solution-processed oxide thin films

    Creator:
    Jiang, Kai
    Abstract:
    Crystals of an incongruent-melting compound, Ba₃MgSi₂O₈, were grown by the flux method and its structure was determined by single crystal X-ray diffraction methods. Ba₃MgSi₂O₈ crystallizes in trigonal space group P-3[bar]m1 with a = 5.6123(3) Å, c = 7.2667(9) Å and Z = 1. Eu²⁺ ions prefer one crystallographic Ba site...
    Resource Type:
    Dissertation
    Full Text:
    ............................... 7 1.3 A staggered, bottom-gate, and n-channel thin-film transistor device structure and its

  • Development of oxide semiconductors : materials, devices, and integration

    Creator:
    Chiang, Hai Q.
    Abstract:
    The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
    Resource Type:
    Dissertation
    Full Text:
    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . 30 3. DEVICE DEVELOPMENT, FABRICATION, AND CHARACTERIZATION 31 3.1 Thin film processing

  • Synthesis and study of oxides and chalcogenides : thin films and crystals

    Creator:
    Park, Sangmoon
    Abstract:
    Several types of solid-state inorganic materials are prepared and characterized. By using the SILAR (Successive Ionic Layer Adsorption and Reaction) deposition method in conjunction with hydrothermal dehydration both low-temperature deposition and crystallization of oxide thin films are achieved. Various aspects of new transparent p-type materials are studied by examining both...
    Resource Type:
    Dissertation
    Full Text:
    .................................................... 5 SILAR Equipment ....................................................... 9 Thin-Film Annealing

  • Zinc tin oxide thin-film transistor current mirror circuits

    Creator:
    Feller, Layannah Elizabeth
    Abstract:
    The central focus of this thesis is the design, fabrication and characterization of amorphous oxide semiconductor (AOS) thin-film transistor (TFT) current mirrors. The thin-film deposition and circuit fabrication methods used to realize zinc tin oxide (ZTO) TFT current mirrors are addressed in order to elucidate the processing challenges for this...
    Resource Type:
    Masters Thesis
    Full Text:
    . Title: Zinc Tin Oxide Thin-Film Transistor Current Mirror Circuits Abstract approved: John F. Wager

  • Copper and iron chalcogenides for efficient solar absorption

    Creator:
    Platt, Heather A. S.
    Abstract:
    This dissertation outlines two approaches for improving the efficiency and reducing the cost of photovoltaic energy generation. First, the structures of known binary copper and iron compounds are used to choose the promising compositions Fe₂XS₄ (X = Si, Ge), Cu₃TaQ₄ (Q = Se, Te), and BaCuQ'F (Q' = S, Se,...
    Resource Type:
    Dissertation
    Full Text:
    Precursor synthesis ........................................................ 41 3.2.2 Thin film preparation

  • Electronic Conduction and Ionic Diffusion in (Bi₀.₅Na₀.₅)TiO₃-(Bi₀.₅K₀.₅)TiO₃-based Thin Films, Electronic Conduction and Ionic Diffusion in (Bi0.5Na0.5)TiO3-(Bi0.5K0.5)TiO3-based Thin Films

    Creator:
    Walenza-Slabe, Joel
    Abstract:
    Solid solutions based on the perovskite ferroelectrics Bi₀.₅Na₀.₅TiO₃ (BNT) and Bi₀.₅K₀.₅TiO₃ (BKT) might someday replace current Pb-based ferroelectric and piezoelectric devices. This is one goal of the Restrictions on Hazardous Substances (RoHS) guidelines seeking to limit Pb in consumer devices. Although the Bi-based ferroelectrics are well suited to the task...
    Resource Type:
    Dissertation
    Full Text:
    ...................……………….....…………..…9 2.1.7 Thin film considerations ................…………………………11 2.2 Leakage current

  • Development of bi-based lead-free piezoelectric materials : thin film piezoelectric materials via PVD and CSD routes

    Creator:
    Jeon, Yu Hong
    Abstract:
    Piezoelectric materials have been widely used in electromechanical actuators, sensors, and ultrasonic transducers. Among these materials, lead zirconate titanate Pb(Zr[subscript 1‐x]Ti[subscript x])O₃ (PZT) has been primarily investigated due to its excellent piezoelectric properties. However, environmental concerns due to the toxicity of PbO have led to investigations into alternative materials systems....
    Resource Type:
    Dissertation
    Full Text:
    ,
2012.
 Title:
Development
of
Bi‐based
Lead‐free
Piezoelectric
Materials:
Thin
Film
 Piezoelectric