Complementary delta-doped AlGaAs/GaAs Heterojunction Field Effect Transistor
(CHFET) devices and circuits were fabricated using MBE and a 2μ non-planar gate
recess process. Several schemes were used in an attempt to improve the performance of
the p-channel HFETs. These included delta-doping, carbon-doping and dipole-doping.
Circuits and individual n- and p- channel...