Index Catalog // ScholarsArchive@OSU

Creator:: Luo, Wei, Wang, Bao, Wang, Xingfeng, Stickle, William F., and Ji, Xiulei
Abstract:: We, for the first time, employ magnesiothermic reaction to convert microwave-irradiated graphite oxide to pure graphene. The magnesiothermic reaction raises the carbon to oxygen atomic ratio from 22.2 to 165.7 and maintains a high surface area. The new strategy demonstrates an efficient method for obtaining highly pure graphene materials.
Resource Type:: Article

Creator:: Wang, Xingfeng, Raju, Vadivukarasi, Luo, Wei, Wang, Bao, Stickle, William F., and Ji, Xiulei
Abstract:: Despite the considerable advances of deposition technologies, it remains a significant challenge to form conformal deposition on surface of nanoporous carbons. Here, we introduce a new ambient hydrolysis deposition method that employs and controls pre-adsorbed water vapor on nanoporous carbons to define the deposition of TiO₂. We converted the deposited...
Resource Type:: Article

Creator:: Raju, Vadivukarasi, Rains, Jordan, Gates, Cooper, Luo, Wei, Wang, Xingfeng, Stickle, William F., Stucky, Galen D., and Ji, Xiulei
Abstract:: We, for the first time, demonstrate that orthorhombic V₂O₅ can exhibit superior electrochemical performance in sodium ion batteries when uniformly coated inside nanoporous carbon. The encapsulated V₂O₅ shows a specific capacity as high as 276 mAh/g, while the whole nanocomposite exhibits a capacity of 170 mAh/g. The V₂O₅/C composite was...
Resource Type:: Article

Creator:: Du, Xiaosong, Flynn, Brendan T., Motley, Joshua R., Stickle, William F., Bluhm, Hendrik, and Herman, Gregory S.
Abstract:: Self-assembled monolayers (SAMs) have been used to improve both the positive and negative bias-stress stability of amorphous indium gallium zinc oxide (IGZO) bottom gate thin film transistors (TFTs). N-hexylphosphonic acid (HPA) and fluorinated hexylphosphonic acid (FPA) SAMs adsorbed on IGZO back channel surfaces were shown to significantly reduce bias-stress turn-on...
Resource Type:: Article

Creator:: Du, Xiaosong, Frederick, Ryan T., Li, Yajuan, Zhou, Zheng, Stickle, William F., and Herman, Gregory S.
Abstract:: The authors present a facile, low-cost methodology to fabricate high-performance In-Ga-Zn-O (IGZO) bottom contact, bottom gate thin-film transistors (TFTs) by soft lithography. The IGZO channel and indium tin oxide (ITO) source and drain were patterned using microcontact printing of an octadecylphosphonic acid self-assembled monolayer (SAM). A polymer stamp was used...
Resource Type:: Article

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