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Filtering by: Subject Ferroelectric thin films Remove constraint Subject: Ferroelectric thin films Decade 2010-2019 Remove constraint Decade: 2010-2019 Degree Level Master's Remove constraint Degree Level: Master's

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  • Crystallization Rates of AIST and Ge Thin Films by Optical and Electron Microscopy

    Creator:
    Bird, Victoriea L.
    Abstract:
    The amorphous to crystalline phase change is of great interest for the production and operation of phase change memory and germanium electronic devices. Phase change memory relies on the ability to differentiate between differences in optical or electrical properties between the amorphous and crystalline phases of a single material. Amorphous...
    Resource Type:
    Masters Thesis
    Full Text:
    ................................................................................................................................................. 18  2.3.1  Amorphous germanium thin film applications

  • Material development for thin-film transistors

    Creator:
    Archila, Kevin Alexander
    Abstract:
    The focus of this thesis is developing materials for thin-film transistors (TFTs). Cu₃SbS₄ is explored as p-channel layer. Cu₃SbS₄ TFTs show p-type, depletion-mode behavior with a small amount of gate-controlled modulation of the channel conductance. This behavior is consistent with Hall measurements indicating a mobility of 17 cm²V⁻¹s⁻¹ and hole...
    Resource Type:
    Masters Thesis
    Full Text:
    Material Development for Thin-film Transistors AN ABSTRACT

  • A multiple solution, laboratory-scale delivery system and its applications

    Creator:
    Gilbuena, Debra M.
    Abstract:
    Researchers around the world use various solution-based deposition techniques to deposit thin films with multiple layers that typically require multiple rounds of deposition. Some such techniques include successive ionic layer adsorption and reaction (SILAR), and layer-by-layer (LBL) deposition. One of the main issues with deposition of these types of films...
    Resource Type:
    Masters Thesis
    Full Text:
    coater for thin film deposition. Documentation, in the form of a component list, operations manual and

  • Synthesis and characterization of Pb(Zr,Ti)O₃ thin films for microelectromechanical systems

    Creator:
    Brookshire, Kirsten L.
    Abstract:
    Pb(Zr,Ti)O₃ (PZT) is a very attractive material for use in piezoelectric-based microelectromechanical systems (MEMS) due to its high piezoelectric coefficients and ability for large displacements with relatively low applied fields (as compared to electrostatic-based MEMS). The piezoelectric effect is strongly anisotropic, thus it is very desirable to control the crystallographic...
    Resource Type:
    Masters Thesis
    Full Text:
    ..................................................... 80 5.3. Dielectric and Ferroelectric Film Properties

  • Comprehensive depletion-mode modeling of oxide thin-film transistors

    Creator:
    Zhou, Fan
    Abstract:
    The primary focus of this thesis is modifying the comprehensive depletion-mode model and extending its applicability to p-channel thin-film transistor (TFT) behavior and subthreshold (subpinchoff) operation. The comprehensive depletion-mode model accurately describes depletion-mode TFT behavior and establishes a set of equations, different from those obtained from square-law theory, which can...
    Resource Type:
    Masters Thesis
    Full Text:
    Oxide Thin-Film Transistors. Abstract approved

  • Atomic layer deposition of nanolaminate Al₂O₃-Ta₂O₅ and ZnO-SnO₂ films

    Creator:
    Smith, Sean Weston
    Abstract:
    Thin films are an enabling technology for a wide range of applications, from microprocessors to diffusion barriers. Nanolaminate thin films combine two (or more) materials in a layered structure to achieve performance that neither film could provide on its own. Atomic layer deposition (ALD) is a chemical vapor deposition technique...
    Resource Type:
    Masters Thesis
    Full Text:
    metal oxide semiconductor field effect transistors and thin film transistors. Al2O3-Ta2O5 nanolaminate

  • Iron Chalcogenide-based Thin Films Fabricated by Inkjet Printing

    Creator:
    Fang, Zhen
    Abstract:
    Digital printing techniques offer several advantages in manufacturing electronics such as direct writing of materials, reduction of chemical waste, and scalability. In particular, printing can significantly simplify manufacturing processes by directly defining the channel area, the gate, and the source and drain contacts, allowing for lower costs and higher throughput...
    Resource Type:
    Masters Thesis
    Full Text:
    and drain contacts, allowing for lower costs and higher throughput manufacture of Thin Film

  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    Al-In-Sn-O Thin-Film Transistors AN ABSTRACT OF THE

  • Zinc tin oxide thin-film transistor current mirror circuits

    Creator:
    Feller, Layannah Elizabeth
    Abstract:
    The central focus of this thesis is the design, fabrication and characterization of amorphous oxide semiconductor (AOS) thin-film transistor (TFT) current mirrors. The thin-film deposition and circuit fabrication methods used to realize zinc tin oxide (ZTO) TFT current mirrors are addressed in order to elucidate the processing challenges for this...
    Resource Type:
    Masters Thesis
    Full Text:
    . Title: Zinc Tin Oxide Thin-Film Transistor Current Mirror Circuits Abstract approved: John F. Wager

  • Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors

    Creator:
    Motley, Joshua R.
    Abstract:
    Investigations on the application of self-assembled monolayers (SAM) to indium gallium zinc oxide (IGZO) thin film transistors (TFT) for fabrication and channel modification are presented. The back channel of IGZO thin film transistors can be modified by the absorption of self-assembled monolayers. The electrical properties of the IGZO exposed back...
    Resource Type:
    Masters Thesis
    Full Text:
    . Title: Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors Abstract