Solid-state amorphous materials show amazing promise in thin-film electronics. The interface-to-bulk ratio of thin films makes interfacial chemistries of these systems of utmost importance. Thin films of amorphous metals, dielectrics and semiconductors have novel chemistries that are not only based upon their elemental constituent makeup, but also based upon the...
Researchers around the world use various solution-based deposition techniques to deposit thin films with multiple layers that typically require multiple rounds of deposition. Some such techniques include successive ionic layer adsorption and reaction (SILAR), and layer-by-layer (LBL) deposition.
One of the main issues with deposition of these types of films...
Pb(Zr,Ti)O₃ (PZT) is a very attractive material for use in piezoelectric-based microelectromechanical systems (MEMS) due to its high piezoelectric coefficients and ability for large displacements with relatively low applied fields (as compared to electrostatic-based MEMS). The piezoelectric effect is strongly anisotropic, thus it is very desirable to control the crystallographic...
The objective of the research presented herein is to elucidate the effect of traps in determining amorphous oxide semiconductor thin-film transistor (AOS TFT) performance using modeling and characterization. A novel method is proposed to extract the interface state distribution from a TFT transfer curve. Analysis of zinc-indium oxide (ZIO), zinc-tin...
The primary focus of this thesis is modifying the comprehensive depletion-mode model and extending its applicability to p-channel thin-film transistor (TFT) behavior and subthreshold (subpinchoff) operation. The comprehensive depletion-mode model accurately describes depletion-mode TFT behavior and establishes a set of equations, different from those obtained from square-law theory, which can...
Thin films are an enabling technology for a wide range of applications, from microprocessors to diffusion barriers. Nanolaminate thin films combine two (or more) materials in a layered structure to achieve performance that neither film could provide on its own. Atomic layer deposition (ALD) is a chemical vapor deposition technique...
Crystals of an incongruent-melting compound, Ba₃MgSi₂O₈, were grown by the flux method and its structure was determined by single crystal X-ray diffraction methods. Ba₃MgSi₂O₈ crystallizes in trigonal space group P-3[bar]m1 with a = 5.6123(3) Å, c = 7.2667(9) Å and Z = 1. Eu²⁺ ions prefer one crystallographic Ba site...
Metal-Organic Frameworks (MOFs) are crystalline compounds formed from reacting a metal ion with an organic ligand. They represent a promising new avenue in materials science for gas separations and storage. Certain MOFs, in particular Mg-MOF-74, have shown a strong affinity for the capture of CO2. This project investigated a known...
Digital printing techniques offer several advantages in manufacturing electronics such as direct writing of materials, reduction of chemical waste, and scalability. In particular, printing can significantly simplify manufacturing processes by directly defining the channel area, the gate, and the source and drain contacts, allowing for lower costs and higher throughput...
The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...