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Filtering by: Creator Campbell, H. F. Remove constraint Creator: Campbell, H. F. Degree Field Electrical and Computer Engineering Remove constraint Degree Field: Electrical and Computer Engineering Degree Level Master's Remove constraint Degree Level: Master's

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  • A base control Doherty power amplifier design for improved efficiency in GSM handsets

    Creator:
    Ferwalt, Darren W.
    Abstract:
    In cellular telephones, RF power amplifiers consume a significant part of the total phone current. Reducing the average PA current will extend battery life. In GSM systems the handset is commanded by the base station to transmit at power levels lower than full power much of the time. A Doherty...
    Resource Type:
    Masters Thesis
    Full Text:
    traditions. Thanks also to Dr. Rick Campbell for his expertise, advice and encouragement along the way

  • Design of on-line arithmetic networks for signal processing applications : a color filter implementation

    Creator:
    Sinky, Mohammed H.
    Abstract:
    Networks of on-line modules for Digital Signal Processing (DSP) applications have been designed and analyzed in many papers. Various arguments have been made for on-line arithmetic over other bit-serial and parallel approaches. However, the majority, if not all of the on-line network implementations presented throughout the literature do not take...
    Resource Type:
    Masters Thesis
    Full Text:
    . . . . . . . . . . . . . . . . . . . . 4 1.2 On-line and conventional timing for y = (a/b) ∗ e ∗ g + (c/d) ∗ f ∗ h . . 6 1.3 Three basic

  • Discrete trap modeling of thin-film transistors

    Creator:
    Yerubandi, Ganesh Chakravarthy
    Abstract:
    A discrete trap model is developed and employed for elucidation of thin-film transistor (TFT) device physics trends. An attractive feature of this model is that only two model parameters are required, the trap energy depth, E[subscript T], and the trap density, N[subscript T]. The most relevant trends occur when E[subscript...
    Resource Type:
    Masters Thesis
    Full Text:
    - based parameters employed for this simulation are: Z/L = 6:1, h = 20 nm, CG = 6.04 × 10-8 F/cm2, µ

  • Low frequency 1/f noise of p-MOS, bipolar and lateral bipolar transistors

    Creator:
    Cheng, Mark
    Abstract:
    This thesis deals with 1/f noise in p-MOS, bipolar, and lateral bipolar transistors. Experimental measurements determine the appropriate 1/f noise for MOSFET's, bipolar transistors and lateral bipolar transistors. The literature on 1/f noise in p-MOSFETs, bipolar transistors and lateral bipolar transistors is reviewed. The two main sources of low frequency...
    Resource Type:
    Masters Thesis
    Full Text:
    Low frequency 1/f noise of p-MOS, bipolar and lateral bipolar

  • Atomic Layer Deposition (ALD) Process Development of Nb-doped TiO₂ as a Transparent Conducting Oxide (TCO) and ALD of HfO₂/Nb₂O₅ Bilayers as Insulating Barriers for Metal/Insulator/Insulator/Metal (MIIM) Diodes

    Creator:
    Lin, Shijia
    Abstract:
    Transparent conductive oxides (TCOs), primarily indium doped tin oxide, have been widely used in numerous fields since decades ago, such as solar cells, displays, OLEDs and ‘smart windows’ etc. Owing to the scarcity of indium, there is a great demand for new alternative materials. Metal/insulator/metal (MIM) diodes are a critical...
    Resource Type:
    Masters Thesis
    Full Text:
    : __________________________________________________ John F. Conley, Jr. Transparent conductive oxides (TCOs), primarily indium doped tin oxide

  • Nucleation Inhibiting Mechanisms in Atomic Layer Deposition of Nanolaminates

    Creator:
    Witsell, Shane Mike’ele Williama
    Abstract:
    Nucleation in atomic layer deposition (ALD) determines how many cycles are required to initiate growth and to form a continuous film. Nucleation has been exploited for the formation of nanoparticles, catalysts, and for area-selective ALD. Although sometimes overlooked or misrepresented in ALD reports, nucleation is also critical for multicomponent ALD...
    Resource Type:
    Masters Thesis
    Full Text:
    : ______________________________________________________ John F. Conley, Jr. Nucleation in atomic layer deposition (ALD) determines how many cycles

  • Fabrication of a flexible glucose sensing catheter for human implantation

    Creator:
    Matthews, David J.
    Abstract:
    Flexible electronics processing techniques were applied to integrate a glucose sensor with a hormone-delivery catheter in order to create a cheap and minimally invasive method for patients with type 1 diabetes to continually monitor and control their blood sugar levels. Ultimately, this work intends to move toward the development of...
    Resource Type:
    Masters Thesis
    Full Text:
    : ______________________________________________________ John F. Conley, Jr. Flexible electronics processing techniques were applied to integrate a

  • Inorganic thin-film solar cells

    Creator:
    Spies, Jack Alexander
    Abstract:
    The primary objective of this thesis is to explore new absorber and p-type window layer materials for thin-film solar cell applications. A new thin-film electron beam deposition system has been installed, is now operational, and has been used to deposit several types of solar cell absorber layers. Material investigations include...
    Resource Type:
    Masters Thesis
    Full Text:
    : Inorganic Thin-Film Solar Cells Abstract approved: John F. Wager The primary objective of this thesis is

  • Oxide phosphors deposited by activated reactive evaporation for ACTFEL device applications

    Creator:
    Yokoyama, Tomoe
    Abstract:
    The goal of this thesis study is to develop an activated reactive evaporation (ARE) system and to demonstrate its utility by fabricating-alternating current thin-film electroluminescent (ACTFEL) oxide phosphor devices. ARE entails evaporation in an activated gas. The main ARE system components are three thermal evaporation sources, a microwave power supply,...
    Resource Type:
    Masters Thesis
    Full Text:
    Phosphors Deposited by Activated Reactive Evaporation for ACTFEL Device pp1ic Abstract approved: John F

  • Surface recombination velocity and bulk lifetime in GaAs and InP

    Creator:
    Rastegar, Bahador
    Abstract:
    An analytical expression is derived which allows the bulk minority carrier recombination lifetime, t, and the surface recombination velocity, S, to be extracted from a single noncontact photoconductivity decay (PCD) measurement. This analytical expression is rather complex, but can be reduced to a first order approximation. The first order approximation...
    Resource Type:
    Masters Thesis
    Full Text:
    Bulk Lifetime in GaAs and InP. Abstract approved: Redacted for Privacy 1 Dr. John F. Wager An