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Filtering by: Creator Mairs, John W. Remove constraint Creator: Mairs, John W. Degree Field Electrical and Computer Engineering Remove constraint Degree Field: Electrical and Computer Engineering Language English [eng] Remove constraint Language: English [eng]

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  • Growth and characterization of III-V compound semiconductor materials for use in novel MODFET structures and related devices

    Creator:
    Schulte, Donald W.
    Resource Type:
    Dissertation
    Full Text:
    materials for use in novel MODFET structures and related devices AN ABSTRACT OF THE THESIS OF Donald W

  • Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

    Creator:
    Schulte, Donald W.
    Abstract:
    This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the indium mole fraction and quantum well width of the InGaAs channel region. Extensive characterization...
    Resource Type:
    Masters Thesis
    Full Text:
    -channel GaAs/InGaAs/AlGaAs MODFETS AN ABSTRACT OF THE THESIS OF Donald W. Schulte For the degree of

  • Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

    Creator:
    McGlone, John M.
    Abstract:
    Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
    Resource Type:
    Dissertation
    Full Text:
    AN ABSTRACT OF THE DISSERTATION OF John M. McGlone for the

  • Material development for thin-film transistors

    Creator:
    Archila, Kevin Alexander
    Abstract:
    The focus of this thesis is developing materials for thin-film transistors (TFTs). Cu₃SbS₄ is explored as p-channel layer. Cu₃SbS₄ TFTs show p-type, depletion-mode behavior with a small amount of gate-controlled modulation of the channel conductance. This behavior is consistent with Hall measurements indicating a mobility of 17 cm²V⁻¹s⁻¹ and hole...
    Resource Type:
    Masters Thesis
    Full Text:
    Transistors Abstract approved: John F. Wager The focus of this thesis is developing materials for thin-film

  • Zinc tin oxide thin-film transistor circuits

    Creator:
    Heineck, Daniel Philip
    Abstract:
    The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO) as the channel layer. ZTO, in contrast to indium- or gallium-based amorphous oxide semiconductors (AOS), is perceived to be a more commercially viable AOS choice...
    Resource Type:
    Masters Thesis
    Full Text:
    Tin Oxide Thin-Film Transistor Circuits Abstract approved: John F. Wager The primary objective of

  • Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment

    Creator:
    Sundholm, Eric Steven
    Abstract:
    Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this thesis. Within this theme, three primary areas of focus are pursued. The first focus is the realization of a transparent three-stage ring oscillator with buffered output and an output frequency in the megahertz range. This leads to...
    Resource Type:
    Masters Thesis
    Full Text:
    approved: John F. Wager Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the

  • Comprehensive depletion-mode modeling of oxide thin-film transistors

    Creator:
    Zhou, Fan
    Abstract:
    The primary focus of this thesis is modifying the comprehensive depletion-mode model and extending its applicability to p-channel thin-film transistor (TFT) behavior and subthreshold (subpinchoff) operation. The comprehensive depletion-mode model accurately describes depletion-mode TFT behavior and establishes a set of equations, different from those obtained from square-law theory, which can...
    Resource Type:
    Masters Thesis
    Full Text:
    : _____________________________________________________________________ John F. Wager The primary focus of this thesis is modifying the

  • Modeling and characterization of amorphous oxide semiconductor thin-film transistors

    Creator:
    Yeh, Bao-Sung
    Abstract:
    The objective of the research presented herein is to elucidate the effect of traps in determining amorphous oxide semiconductor thin-film transistor (AOS TFT) performance using modeling and characterization. A novel method is proposed to extract the interface state distribution from a TFT transfer curve. Analysis of zinc-indium oxide (ZIO), zinc-tin...
    Resource Type:
    Dissertation
    Full Text:
    John F. Wager The objective of the research presented herein is to elucidate the effect of

  • Synchronization in a CMOS technology

    Creator:
    Flannagan, Stephen T.
    Abstract:
    The problem of synchronization arises in the interaction among digital systems not sharing a common clock reference. The reliability of synchronizers is related to metastable operation of bistable elements. Because of its subtle nature, the phenomenon until recently was not widely researched. However, the literature now contains a sound theoretical...
    Resource Type:
    Masters Thesis
    Full Text:
    for Privacy Abstract approved: ProfeOcir John Owen The problem of synchronization arises in the

  • Design, fabrication and characterization of a complementary GaAs MODFET structure

    Creator:
    Dang, Yen
    Resource Type:
    Masters Thesis
    Full Text:
    AND CHARACTERIZATION OF A COMPLEMENTARY GaAs MODFET STRUCTURE Abstract approved: John Arthur This