Index Catalog // ScholarsArchive@OSU

Characterization and comparison of 830 nm laser diodes fabricated in MOCVD and MBE grown heterostructures

Creator:: Ramamoorthy, Balaji P.
Resource Type:: Masters Thesis
Full Text:: to Dr. S. Subramanian for the various tips that he provided during device processing and

Characterization and applications of low-temperature-grown MBE gallium arsenides

Creator:: Zhao, Pin
Resource Type:: Masters Thesis
Full Text:: work. Special thanks to Dr. S Subramanian for his assistance in device fabrication, experiment design

Model-based solution techniques for the source localization problem in distributed parameter systems

Creator:: Alpay, Mehmet Emin
Abstract:: In this thesis, three model-based methods are presented for finding the location of a point source with possibly time-varying strength for a class of distributed parameter systems. The first method involves off-line numerical computation of the time-response data at the sensor(s) from all possible source locations and functions of source...
Resource Type:: Dissertation
Full Text:: at the sensor(s) from all possible source locations and functions of source strength, and comparison

Fabrication and characterization of modulation doped field effect transistors for quantum waveguide structures

Creator:: Yindeepol, Wipawan, 1960-
Abstract:: Split and normal gate A1GaAs /GaAs MODFETs were fabricated along with the ohmic test structures and the Hall bar geometries. The DC characteristics of normal gate transistors were evaluated at room temperature and at 77K and the threshold voltages were extracted from the measurements and compared to the theoretical results....
Resource Type:: Masters Thesis
Full Text:: George Pubanz for growing samples used in this study, Leon Ungier for his help with the equipment, and

Wide bandwidth GaAs MESFET amplifier

Creator:: Yan, Kai-tuan Kelvin
Resource Type:: Masters Thesis
Full Text:: for Privacy Leon or es A high bandwidth operational amplifier has been designed. The cascode

Design, fabrication and characterization of a complementary GaAs MODFET structure

Creator:: Dang, Yen
Resource Type:: Masters Thesis
Full Text:: guidance and insight. Special thanks to Leon Ungier, Donald Schulte and Terry McMahon for providing me

Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

Creator:: Schulte, Donald W.
Abstract:: This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the indium mole fraction and quantum well width of the InGaAs channel region. Extensive characterization...
Resource Type:: Masters Thesis
Full Text:: , Fabrication and Testing of Pseudomorphic P-channel GaA s/InGaA s/ AlGaA s MODFETS. Approved: Redacted for

ACTFEL phosphor deposition by RF sputtering

Creator:: Ang, Wie Ming
Resource Type:: Masters Thesis
Full Text:: to Jim Krebs, Chuck Meitt le, Art Nee ley, and Leon Ungier for their technical assistance without

Grating-tuned external cavity diode lasers

Creator:: Falconer, Beate Stephan
Abstract:: Diode lasers have many advantages such as small size, high efficiency and small angular dispersion of the collimated beam. However they also have some problems like lack of frequency stability. They can not be tuned in wavelength. An external cavity can solve these problems and decrease the laser linewidth. To...
Resource Type:: Masters Thesis
Full Text:: thank the faculty members Leon Ungier and S. Subramanian as well as Don Schulte, Terry McMahon and

Design, fabrication and characterization of complementary heterojunction field effect transistors

Creator:: McMahon, Terry E. (Terry Edwin), 1963-
Abstract:: Complementary delta-doped AlGaAs/GaAs Heterojunction Field Effect Transistor (CHFET) devices and circuits were fabricated using MBE and a 2μ non-planar gate recess process. Several schemes were used in an attempt to improve the performance of the p-channel HFETs. These included delta-doping, carbon-doping and dipole-doping. Circuits and individual n- and p- channel...
Resource Type:: Masters Thesis
Full Text:: Head of Dep hient of Electrical and Computer Engineering in charge of major Dean of Graduate S Date

ScholarsArchive@OSU

Characterization and comparison of 830 nm laser diodes fabricated in MOCVD and MBE grown heterostructures

Characterization and applications of low-temperature-grown MBE gallium arsenides

Model-based solution techniques for the source localization problem in distributed parameter systems

Fabrication and characterization of modulation doped field effect transistors for quantum waveguide structures

Wide bandwidth GaAs MESFET amplifier

Design, fabrication and characterization of a complementary GaAs MODFET structure

Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

ACTFEL phosphor deposition by RF sputtering

Grating-tuned external cavity diode lasers

Design, fabrication and characterization of complementary heterojunction field effect transistors

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