Index Catalog // ScholarsArchive@OSU

Fabrication and characterization of modulation doped field effect transistors for quantum waveguide structures

Creator:: Yindeepol, Wipawan, 1960-
Abstract:: Split and normal gate A1GaAs /GaAs MODFETs were fabricated along with the ohmic test structures and the Hall bar geometries. The DC characteristics of normal gate transistors were evaluated at room temperature and at 77K and the threshold voltages were extracted from the measurements and compared to the theoretical results....
Resource Type:: Masters Thesis
Full Text:: Fabrication and characterization of modulation doped field

Design, fabrication and characterization of complementary heterojunction field effect transistors

Creator:: McMahon, Terry E. (Terry Edwin), 1963-
Abstract:: Complementary delta-doped AlGaAs/GaAs Heterojunction Field Effect Transistor (CHFET) devices and circuits were fabricated using MBE and a 2μ non-planar gate recess process. Several schemes were used in an attempt to improve the performance of the p-channel HFETs. These included delta-doping, carbon-doping and dipole-doping. Circuits and individual n- and p- channel...
Resource Type:: Masters Thesis
Full Text:: : Stephen M. Goodnick, Advisor Complementary delta-doped A1GaAs /GaAs Heterojunction Field Effect

Modeling and characterization of hemt devices

Creator:: Chang, Chujyh
Abstract:: Different gate length (0.5 μm 16 μm) Al GaAs/GaAs and AIGaAs /InGaAs High Electron Mobility Transistors were electrically characterized in order to compare the room temperature DC device performance with one-dimensional device models. Model parameters such as the channel mobility and source/drain series resistances are extracted from independent measurement of...
Resource Type:: Masters Thesis
Full Text:: approved: Redacted for Privacy Stephen M. Goodnick Different gate length (0.5 gm 16 gm) Al GaAs/GaAs and

New methods for finite field arithmetic

Creator:: Yanik, Tuğrul
Abstract:: We describe novel methods for obtaining fast software implementations of the arithmetic operations in the finite field GF(p) and GF(p[superscript k]). In GF(p) we realize an extensive speedup in modular addition and subtraction routines and some small speedup in the modular multiplication routine with an arbitrary prime modulus p which...
Resource Type:: Dissertation
Full Text:: Methods for Finite Field Arithmetic Abstract approved: cetin K. Koç We describe novel methods for

Growth and characterization of III-V compound semiconductor materials for use in novel MODFET structures and related devices

Creator:: Schulte, Donald W.
Resource Type:: Dissertation
Full Text:: in Novel MODFET Structures and Related Devices. Abstract approved: John R. Arthur Stephen M

Preliminary studies on a magnetic elevator for solids (MES)

Creator:: Ranawake, Udaya A.
Abstract:: The thesis describes the preliminary studies on a laboratory model of a magnetic elevator intended as part of a system for circulating magnetic materials in chemical reactors. A multiple coil laboratory model, controlled by computer, was designed and constructed. Current measuring transducers were used to monitor system performance and study...
Resource Type:: Masters Thesis
Full Text:: of i vs. t 22 4.3 Variation of m vs. D 25 4.4 Variation of m vs. s 26 4.5 Variation of m vs. T 27

Analytical model of GaAs MESFET output conductance with frequency and temperature dependent parameters

Creator:: Lam, Steven C. F.
Abstract:: The output characteristics of a conventional GaAs depletion-mode MESFET device have been investigated. One of the important parameters of the small-signal GaAs MESFET model, g[subscript ds] (output conductance), is shown to be frequency and temperature dependent. Variations in g[subscript ds] are a serious problem in many analog and digital circuits...
Resource Type:: Masters Thesis
Full Text:: Stephen M. Goodnick, and professor Curtis R. Cook for serving on my graduate committee. I am

New algorithms and architectures for arithmetic in GF(2[superscript m]) suitable for elliptic curve cryptography

Creator:: Rodríguez-Henríquez, Francisco
Abstract:: During the last few years we have seen formidable advances in digital and mobile communication technologies such as cordless and cellular telephones, personal communication systems, Internet connection expansion, etc. The vast majority of digital information used in all these applications is stored and also processed within a computer system, and...
Resource Type:: Dissertation
Full Text:: Redacted for Privacy an elliptic curve is defined over a finite field, the points on the curve form an

Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

Creator:: Schulte, Donald W.
Abstract:: This thesis reports on the growth and characterization of p-type pseudomorphic A1GaAs /InGaAs /GaAs modulation doped field effect transistor (MODFET) structures. A series of different p-type MODFET structures were grown with a systematic variation of the indium mole fraction and quantum well width of the InGaAs channel region. Extensive characterization...
Resource Type:: Masters Thesis
Full Text:: Privacy John R. Arthur, Advisor Redacted for Privacy Stephen M. Goodnick, Co-Advisor This thesis

Analog integrated circuit design using GaAs C-HFETs

Creator:: Gupta, Rakhee
Abstract:: Present day data processing technology requires very high speed signal processing and data conversion rates. One such application which requires high speed is switched capacitor circuits used in Sigma-Delta modulators. A major active component of switched capacitor circuits is the monolithic operational amplifier(opamp). Because of the relatively poor speed performance...
Resource Type:: Masters Thesis
Full Text:: Redacted for 'privacy Abstract approved. Stephen M. Goodnick Present day data processing technology

ScholarsArchive@OSU

Fabrication and characterization of modulation doped field effect transistors for quantum waveguide structures

Design, fabrication and characterization of complementary heterojunction field effect transistors

Modeling and characterization of hemt devices

New methods for finite field arithmetic

Growth and characterization of III-V compound semiconductor materials for use in novel MODFET structures and related devices

Preliminary studies on a magnetic elevator for solids (MES)

Analytical model of GaAs MESFET output conductance with frequency and temperature dependent parameters

New algorithms and architectures for arithmetic in GF(2[superscript m]) suitable for elliptic curve cryptography

Growth, fabrication and testing of pseudomorphic P-channel GaAs/InGaAs/AlGaAs MODFETS

Analog integrated circuit design using GaAs C-HFETs

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