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  • Design techniques for radiation hardened-phase locked loops

    Creator:
    Nemmani, Anantha Nag
    Abstract:
    Spacecrafts experience radiation in the course of their operation and all electronic equipment on board these spacecrafts has to be designed to withstand the effects of this radiation. This thesis describes the effects of total ionization dose (TID) and single event transients (SET) in phase-locked loops - an important circuit...
    Resource Type:
    Masters Thesis
    Full Text:
    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 2 EFFECTS OF RADIATION ON PHASE-LOCKED LOOPS . . . . . . . . . . . . 3 2.1 Effect of total

  • Radiation effects in compound semiconductor heterostructure devices

    Creator:
    Sarkar, Aveek, 1974-
    Abstract:
    Radiation studies were performed on compound semiconductor heterostructure devices. The objective was to understand the degradation processes caused by the exposure of these devices to radiation. Preliminary experiments were focussed on studying the degradation phenomenon in single heterojunctions and single quantum wells. It was found that ionizing radiation like gamma...
    Resource Type:
    Masters Thesis
    Full Text:
    exposure of these devices to radiation. Preliminary experiments were focussed on studying the degradation

  • Oscillators and phase locked loops for space radiation environments

    Creator:
    Vandepas, Martin
    Abstract:
    Circuits operating outside the earth’s atmosphere are more vulnerable to cosmic radiation and require special design consideration. The purpose of this work is to explore methods of mitigating the effect of radiation in phase locked loop (PLL) circuits. Several voltage controlled oscillators (VCOs) and two complete PLLs are designed and...
    Resource Type:
    Masters Thesis
    Full Text:
    electronics are always given thorough attention to the effect of radiation on the circuit. Research has

  • Radiation effects in III-V heterojunction bipolar transistors

    Creator:
    Vuppala, Soujanya
    Abstract:
    Electron and neutron irradiation effects in InGaP/GaAs single heterojunction bipolar transistors are investigated in this thesis. Devices with different emitter sizes and grown by two different growth techniques were examined. Based on the physics of heterojunction bipolar transistors and concepts of radiation damage mechanisms, the irradiation effects were analyzed. The...
    Resource Type:
    Masters Thesis
    Full Text:
    and act mainly on the bulk of the device whereas the effect of ionizing radiation is mostly surface

  • Measurement and analysis of soft error vulnerability of low-voltage logic and memory circuits

    Creator:
    Pawlowski, Robert
    Abstract:
    Scaling the supply voltage into the sub/near-threshold domain is one of the most effective methods for improving the energy efficiency of next-generation electronic microsystems. Unfortunately, the relationship between low-voltage operation and radiation-induced soft error rate is not widely known, as little research has been previously performed and reported for soft-error...
    Resource Type:
    Dissertation
    Full Text:
    logic tests focusing on tran­ sient pulse propagation in NAND-based vs. NOR-based logic, the effect of

  • Radiation effects in III-V compound semiconductor heterostructure devices

    Creator:
    Li, ChyiShiun
    Abstract:
    The radiation effects in III-V heterojunction devices are investigated in this thesis. Two types of heterojunction devices studied are InGaP/GaAs single heterojunction bipolar transistors (SHBTs) and GaN-based heterojunction light emitting diodes (LEDs). InGaP/GaAS HBTs are investigated for high energy (67 and 105 MeV) proton irradiation effects while GaN heterojunction LEDs...
    Resource Type:
    Masters Thesis
    Full Text:
    pronounced radiation effect shown in SHBTs is gain degradation. Dis- placement damage in the bulk of base