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Filtering by: Creator Walden, John B. Remove constraint Creator: Walden, John B. Degree Field Electrical and Computer Engineering Remove constraint Degree Field: Electrical and Computer Engineering

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  • Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors

    Creator:
    Triska, Joshua B.
    Abstract:
    Nanolaminate dielectrics combine two or more insulating materials in a many-layered film. These structures can be made to significantly outperform films composed of a single one of their constituent materials by adjusting the composition ratio, arrangement, and size of the component layers. In this work, atomic layer deposition (ALD) is...
    Resource Type:
    Masters Thesis
    Full Text:
    ABSTRACT OF THE THESIS OF Joshua B. Triska for the degree of Master of Science in Electrical and

  • State space modeling of alternating-current thin-film electroluminescent devices

    Creator:
    Peery, Jeffrey B.
    Resource Type:
    Masters Thesis
    Full Text:
    Electroluminescent Devices AN ABSTRACT OF THE THESIS OF Jeffrey B Peery for the degree of Master of Science in

  • Phosphor development for alternating-current thin-film electroluminescent applications

    Creator:
    Nguyen, Tin T.
    Resource Type:
    Masters Thesis
    Full Text:
    sincere appreciation to Dr. John F. Wager for his guidance, encouragement, and patience during my

  • Nucleation Inhibiting Mechanisms in Atomic Layer Deposition of Nanolaminates

    Creator:
    Witsell, Shane Mike’ele Williama
    Abstract:
    Nucleation in atomic layer deposition (ALD) determines how many cycles are required to initiate growth and to form a continuous film. Nucleation has been exploited for the formation of nanoparticles, catalysts, and for area-selective ALD. Although sometimes overlooked or misrepresented in ALD reports, nucleation is also critical for multicomponent ALD...
    Resource Type:
    Masters Thesis
    Full Text:
    : ______________________________________________________ John F. Conley, Jr. Nucleation in atomic layer deposition (ALD) determines how many cycles

  • Modeling and characterization of amorphous oxide semiconductor thin-film transistors

    Creator:
    Yeh, Bao-Sung
    Abstract:
    The objective of the research presented herein is to elucidate the effect of traps in determining amorphous oxide semiconductor thin-film transistor (AOS TFT) performance using modeling and characterization. A novel method is proposed to extract the interface state distribution from a TFT transfer curve. Analysis of zinc-indium oxide (ZIO), zinc-tin...
    Resource Type:
    Dissertation
    Full Text:
    John F. Wager The objective of the research presented herein is to elucidate the effect of

  • Material development for thin-film transistors

    Creator:
    Archila, Kevin Alexander
    Abstract:
    The focus of this thesis is developing materials for thin-film transistors (TFTs). Cu₃SbS₄ is explored as p-channel layer. Cu₃SbS₄ TFTs show p-type, depletion-mode behavior with a small amount of gate-controlled modulation of the channel conductance. This behavior is consistent with Hall measurements indicating a mobility of 17 cm²V⁻¹s⁻¹ and hole...
    Resource Type:
    Masters Thesis
    Full Text:
    Transistors Abstract approved: John F. Wager The focus of this thesis is developing materials for thin-film

  • Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment

    Creator:
    Sundholm, Eric Steven
    Abstract:
    Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this thesis. Within this theme, three primary areas of focus are pursued. The first focus is the realization of a transparent three-stage ring oscillator with buffered output and an output frequency in the megahertz range. This leads to...
    Resource Type:
    Masters Thesis
    Full Text:
    approved: John F. Wager Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the

  • Electronic device and nanolaminate application of amorphous metal thin films

    Creator:
    Cowell, E. William, III
    Abstract:
    The objective of this dissertation is to develop amorphous metal thin films (AMTFs) for two-terminal electrical device and nanolaminate applications. Two AMTFs, ZrCuAlNi and TiAl, are investigated in both two-terminal electrical device and nanolaminate applications. Material properties including composition, atomic order, surface morphology, surface potential, and electrical resistivity are explored....
    Resource Type:
    Dissertation
    Full Text:
    : John F. Wager The objective of this dissertation is to develop amorphous metal thin films (AMTFs) for

  • Amorphous multi-component metals as electrode materials

    Creator:
    Cowell, E. William
    Abstract:
    The objective of this thesis is to provide an initial demonstration of two-terminal and three-terminal electronic devices employing amorphous multi-component metallic film (AMMF) electrodes. Such a demonstration is successfully achieved in the fabrication of metal-insulator-metal (MIM) diode and hot electron transistor (HETs) structures employing ZrCuAlNi AMMF electrodes. The ultra-smooth surface...
    Resource Type:
    Masters Thesis
    Full Text:
    : Amorphous Multi-Component Metals as Electrode Materials. Abstract approved: John F. Wager The objective

  • Zinc tin oxide thin-film transistor circuits

    Creator:
    Heineck, Daniel Philip
    Abstract:
    The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO) as the channel layer. ZTO, in contrast to indium- or gallium-based amorphous oxide semiconductors (AOS), is perceived to be a more commercially viable AOS choice...
    Resource Type:
    Masters Thesis
    Full Text:
    Tin Oxide Thin-Film Transistor Circuits Abstract approved: John F. Wager The primary objective of