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Filtering by: Subject Metal semiconductor field-effect transistors -- Noise Remove constraint Subject: Metal semiconductor field-effect transistors -- Noise Degree Level Master's Remove constraint Degree Level: Master's Non-Academic Affiliation Oregon State University. Graduate School Remove constraint Non-Academic Affiliation: Oregon State University. Graduate School

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  • SPICE models for flicker noise in p-MOSFET's and phase noise effects on oscillator circuits

    Creator:
    Zhou, Junlin, 1973-
    Resource Type:
    Masters Thesis
    Full Text:
    - semiconductor field-effect transistors". Refer to Table 3.1, it shows the different MOSFET device and flicker

  • Analytical model of GaAs MESFET output conductance with frequency and temperature dependent parameters

    Creator:
    Lam, Steven C. F.
    Abstract:
    The output characteristics of a conventional GaAs depletion-mode MESFET device have been investigated. One of the important parameters of the small-signal GaAs MESFET model, g[subscript ds] (output conductance), is shown to be frequency and temperature dependent. Variations in g[subscript ds] are a serious problem in many analog and digital circuits...
    Resource Type:
    Masters Thesis
    Full Text:
    motion within a semiconductor crystal. For a long channel device, low field mobility serves as the

  • Layout dependent and bias independent scalable substrate model for RF MOSFETs

    Creator:
    Suravarapu, Ravikanth
    Abstract:
    The dependence of the substrate resistance, R[subscript sub], for MOS transistor RF modeling on transistor biasing and layout is studied from device simulations and measurements. Though R[subscript sub] is found to be bias dependent, the error incurred by assuming a constant value equal to the DC resistance is not significant....
    Resource Type:
    Masters Thesis
    Full Text:
    low noise amplifier (LNA) is designed and fabricated in the 0.35 tm TSMC process to show the effect

  • Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronics

    Creator:
    Munsee, Craig L.
    Abstract:
    The long-term goal of this research project is the development of solution-based inorganic dielectric and semiconductor materials for inkjet printed electronics. The main focus of this thesis involves testing of the materials and devices under development. A new solution-based inorganic dielectric material (HfOSO₄), given the name hafsox, is developed and...
    Resource Type:
    Masters Thesis
    Full Text:
    Transistors (TFTs) ............................... 13 2.5.2 Metal-Semiconductor Field-Effect Transistor

  • Drain current transient characterization of P-channel GaAs MESFET

    Creator:
    Peng, Lan L.
    Abstract:
    GaAs MESFETs are widely used in high speed integrated circuits (ICs) and microwave circuits. Due to the materials and processing methods used in GaAs MESFET fabrication, deep level traps in the substrate materials have a strong influence on device performance. In this work we used the drain current transient characterization...
    Resource Type:
    Masters Thesis
    Full Text:
    OF P-CHANNEL GaAs MESFET 1. INTRODUCTION The metal-semiconductor field-effect transistor (MESFET

  • Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit

    Creator:
    Or, Pee-Keong
    Abstract:
    The characteristic of the subthreshold current in a GaAs MESFET exhibits a negative exponential function with Vgs. After studying the behavior of this current in this region over a range of temperature and drain bias voltages, a subthreshold current model was developed. The model was implemented in a circuit simulation...
    Resource Type:
    Masters Thesis
    Full Text:
    ]. The inherent high electron mobility makes GaAs Metal Semiconductor Field Effect Transistors (MESFETs

  • Hot electron effects in N-channel MOSFET's

    Creator:
    Or, Siu-shun Burnette
    Abstract:
    The purpose of this work is to develop a new model for LDD n-MOSFET degradation in drain current under long-term AC use conditions for lifetime projection which includes a self-limiting effect in the hot-electron induced device degradation. Experimental results on LDD n-channel MOSFETs shows that the maximum drain current degradation...
    Resource Type:
    Masters Thesis
    Full Text:
    the lightly doped drain-source (LDD) insulated gate field-effect transistor," IEEE Tran. Electron

  • Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

    Creator:
    Aminzadeh, Payman G.
    Abstract:
    Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
    Resource Type:
    Masters Thesis
    Full Text:
    -semiconductor field-effect transistors (MOSFETs) are the dominant devices used in today's semiconductor

  • MOSFET-only predictive track and hold circuit

    Creator:
    Qiu, Xiangping
    Abstract:
    High-accuracy and high-speed CMOS track-and-hold (T/H) or sample-and-hold (S/H) circuits are an important part of the analog-to-digital interface. The switched-capacitor (SC) circuits usually contain one or more op-amps whose dc offset, finite gain, finite bandwidth have a big impact on the accuracy of the track-and-hold circuit. Basic correlated double sampling...
    Resource Type:
    Masters Thesis
    Full Text:
    slew rate 32 4.2.4 The effect of finite output resistance 33 4.3 Noise 35 4.3.1 Thermal noise

  • Wide bandwidth GaAs MESFET amplifier

    Creator:
    Yan, Kai-tuan Kelvin
    Resource Type:
    Masters Thesis
    Full Text:
    parameters from the TriQuint Semiconductor 1 gm depletion mode technology. Wide Bandwidth GaAs MESFET