The electrical behavior of on-chip interconnects has become a dominant factor in silicon-based high speed, RF, and mixed-signal integrated circuits. In particular, the frequency-dependent loss mechanisms in heavily-doped silicon substrates can have a large influence on the transmission characteristics of on-chip interconnects. To optimize the performance of the integrated circuit,...
Passive components, including spiral inductors and transformers, fabricated on silicon-based substrates are placing an increasing demand on radio-frequency integrated circuit (RFIC) design. Performance of the RFIC suffers from several non-ideal effects that must be taken into account in order to create a successful design. In particular, monolithic transformers can be...
This thesis examines substrate noise coupling for NMOS transistors in heavily doped substrates. The study begins with the analysis of an NMOS transistor switching noise in a digital inverter at the device level. A resistive substrate network for the NMOS transistor is proposed and verified. Coupling between N+- P+ contacts...
In high-frequency circuit design, performance is often limited by the quality of the passive components available for a particular process. Specifically, spiral inductors can be a major bottle-neck for Voltage-Controlled Oscillators (VCOs), Low-Noise Amplifiers (LNAs), mixers, etc. For designers to correctly optimize a circuit using a spiral inductor, several frequency-domain...
Magnetically coupled passive transformers are increasingly integrated on-chip for
various analog and radio frequency (RF) applications including direct current
(DC) isolation, impedance transformation/matching, and conversion between
single-ended and differential signals. A primary motivation for the on-chip
integration of transformers is the overall size reduction and reduced cost.
However, the performance...
For mmWave Integrated Circuit (IC) design, co-integration of passives can reduce size and power consumption, increase reliability, and reduce overall cost. However, skin and proximity effects in the metallization are aggravated at mmWave frequencies, resulting in increased attenuation and degradation of overall performance. Furthermore, tight integration of passive components (to...
The radiation effects in III-V heterojunction devices are investigated in this thesis. Two types of heterojunction devices studied are InGaP/GaAs single heterojunction bipolar transistors (SHBTs) and GaN-based heterojunction light emitting diodes (LEDs). InGaP/GaAS HBTs are investigated for high energy (67 and 105 MeV) proton irradiation effects while GaN heterojunction LEDs...
In advanced integrated circuit (IC) processes, the metal fill inserted to meet foundry imposed density requirements degrades the performance of interconnects and passive components which ultimately affects the overall circuit performance. Accounting for this degradation through electromagnetic and equivalent circuit modeling is becoming a critical aspect of IC design. However,...