Index Catalog // ScholarsArchive@OSU

Characterization of oxygen and carbon effects in silicon material and MOSFET devices

Creator:: Haddad, Homayoon
Resource Type:: Dissertation
Full Text:: submicron Metal-Oxide-Semiconductor Field Effect Transistor development. As the complexity of new

Layout dependent and bias independent scalable substrate model for RF MOSFETs

Creator:: Suravarapu, Ravikanth
Abstract:: The dependence of the substrate resistance, R[subscript sub], for MOS transistor RF modeling on transistor biasing and layout is studied from device simulations and measurements. Though R[subscript sub] is found to be bias dependent, the error incurred by assuming a constant value equal to the DC resistance is not significant....
Resource Type:: Masters Thesis
Full Text:: substrate has a significant effect on the output impedance of the MOS transistor [10]. At these frequencies

Hot electron effects in N-channel MOSFET's

Creator:: Or, Siu-shun Burnette
Abstract:: The purpose of this work is to develop a new model for LDD n-MOSFET degradation in drain current under long-term AC use conditions for lifetime projection which includes a self-limiting effect in the hot-electron induced device degradation. Experimental results on LDD n-channel MOSFETs shows that the maximum drain current degradation...
Resource Type:: Masters Thesis
Full Text:: the lightly doped drain-source (LDD) insulated gate field-effect transistor," IEEE Tran. Electron

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Creator:: Aminzadeh, Payman G.
Abstract:: Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
Resource Type:: Masters Thesis
Full Text:: -semiconductor field-effect transistors (MOSFETs) are the dominant devices used in today's semiconductor

SPICE models for flicker noise in p-MOSFET's and phase noise effects on oscillator circuits

Creator:: Zhou, Junlin, 1973-
Resource Type:: Masters Thesis
Full Text:: - semiconductor field-effect transistors". Refer to Table 3.1, it shows the different MOSFET device and flicker

MOSFET-only predictive track and hold circuit

Creator:: Qiu, Xiangping
Abstract:: High-accuracy and high-speed CMOS track-and-hold (T/H) or sample-and-hold (S/H) circuits are an important part of the analog-to-digital interface. The switched-capacitor (SC) circuits usually contain one or more op-amps whose dc offset, finite gain, finite bandwidth have a big impact on the accuracy of the track-and-hold circuit. Basic correlated double sampling...
Resource Type:: Masters Thesis
Full Text:: semiconductor charge per unit area, and Cox is the oxide capacitance per unit area. From the above, the small

CMOS low noise amplifier design utilizing monolithic transformers

Creator:: Zhou, Jianjun J.
Abstract:: Full integration of CMOS low noise amplifiers (LNA) presents a challenge for low cost CMOS receiver systems. A critical problem faced in the design of an RF CMOS LNA is the inaccurate high-frequency noise model of the MOSFET implemented in circuit simulators such as SPICE. Silicon-based monolithic inductors are another...
Resource Type:: Dissertation
Full Text:: is low and the gate oxide thickness is small [21]. When the bulk effect can be completely ignored

Reliability and hot-electron effects in analog and mixed-mode circuits

Creator:: Ge, David Ying
Abstract:: Reliability of sub-micron analog circuits is directly related to impact ionization and the subsequent changes in threshold voltage and drain current of n-MOSFET devices. This thesis presents theory of the hot-electron effects on the device characteristics and circuit performance, explores several approaches to improve performance at both the device and...
Resource Type:: Masters Thesis
Full Text:: of the liim n-substrate metal-oxide semiconductor field effect transistor, MOSFET, in analog and

Ultra low voltage DRAM current sense amplifier with body bias techniques

Creator:: Gang, Yung-jin, 1957-
Abstract:: The major limiting factor of DRAM access time is the low transconductance of the MOSFET's which have only limited current drive capability. The bipolar junction transistor(BJT) has a collector current amplification factor, β, times base current and is limited mostly by the willingness to supply this base current. This collector...
Resource Type:: Dissertation
Full Text:: . Along the y-axis, the box contains two one-half field oxide features and one active area feature

A study of the effects of oxide traps on the characteristics of indium phosphide MISFET's

Creator:: Prasad, S. Jayasimha
Resource Type:: Dissertation
Full Text:: the GaAs MESFET (Metal-Semiconductor Field Effect 2 Transistor) technology has evolved in recent

ScholarsArchive@OSU

Characterization of oxygen and carbon effects in silicon material and MOSFET devices

Layout dependent and bias independent scalable substrate model for RF MOSFETs

Hot electron effects in N-channel MOSFET's

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

SPICE models for flicker noise in p-MOSFET's and phase noise effects on oscillator circuits

MOSFET-only predictive track and hold circuit

CMOS low noise amplifier design utilizing monolithic transformers

Reliability and hot-electron effects in analog and mixed-mode circuits

Ultra low voltage DRAM current sense amplifier with body bias techniques

A study of the effects of oxide traps on the characteristics of indium phosphide MISFET's

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