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Filtering by: Subject Metal semiconductor field-effect transistors -- Noise Rights Statement In Copyright

SPICE models for flicker noise in p-MOSFET's and phase noise effects on oscillator circuits

Creator:

Zhou, Junlin, 1973-

Resource Type:

Masters Thesis

Full Text:

- semiconductor field-effect transistors". Refer to Table 3.1, it shows the different MOSFET device and flicker
Characterization of oxygen and carbon effects in silicon material and MOSFET devices

Creator:

Haddad, Homayoon

Resource Type:

Dissertation

Full Text:

submicron Metal-Oxide-Semiconductor Field Effect Transistor development. As the complexity of new
Layout dependent and bias independent scalable substrate model for RF MOSFETs

Creator:

Suravarapu, Ravikanth

Abstract:

The dependence of the substrate resistance, R[subscript sub], for MOS transistor RF modeling on transistor biasing and layout is studied from device simulations and measurements. Though R[subscript sub] is found to be bias dependent, the error incurred by assuming a constant value equal to the DC resistance is not significant....

Resource Type:

Masters Thesis

Full Text:

low noise amplifier (LNA) is designed and fabricated in the 0.35 tm TSMC process to show the effect
Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronics

Creator:

Munsee, Craig L.

Abstract:

The long-term goal of this research project is the development of solution-based inorganic dielectric and semiconductor materials for inkjet printed electronics. The main focus of this thesis involves testing of the materials and devices under development. A new solution-based inorganic dielectric material (HfOSO₄), given the name hafsox, is developed and...

Resource Type:

Masters Thesis

Full Text:

Transistors (TFTs) ............................... 13 2.5.2 Metal-Semiconductor Field-Effect Transistor