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Filtering by: Subject Semiconductors -- Recombination

Recombination and generation lifetime characterization of p/p⁺ epitaxial silicon wafers

Creator:

Aminzadeh, Mehran G.

Abstract:

The refresh times of all dynamic charge storage devices, best characterized by the generation lifetime at roan temperature and the recombination lifetime at higher device operating temperatures (T>70°C), strongly influence the efficient and successful operation of dynamic charge storage devices such as DRAM's and CCD's. Both recombination and generation lifetime...

Resource Type:

Dissertation
Surface recombination velocity and bulk lifetime in GaAs and InP

Creator:

Rastegar, Bahador

Abstract:

An analytical expression is derived which allows the bulk minority carrier recombination lifetime, t, and the surface recombination velocity, S, to be extracted from a single noncontact photoconductivity decay (PCD) measurement. This analytical expression is rather complex, but can be reduced to a first order approximation. The first order approximation...

Resource Type:

Masters Thesis