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  • Investigation of low temperature solution-based deposition process for flexible electronics

    Creator:
    Chang, Yu-Jen
    Abstract:
    The critical contribution of this dissertation is to provide a better understanding of the fundamental Chemical Bath Deposition (CBD) growth kinetic and mechanism for the well known II-VI semiconductor CdS using the newly developed continuous flow microreactor. This continuous flow microreactor provides the temporal resolution to control the homogeneous reaction...
    Resource Type:
    Dissertation
    Full Text:
    AN ABSTRACT OF THE DISSERTATION OF Yu-Jen Chang for the degree of Doctor of Philosophy in

  • Fabrication of a cadmium sulfide thin film transistor using chemical bath deposition

    Creator:
    Voss, Curtis L.
    Abstract:
    The digital revolution has brought information to every corner of our daily lives. Inexpensive and flexible integrated circuits are needed for this continuing revolution. Silicon technology, the current workhorse of microelectronic industry, is far from inexpensive and flexible. Researchers are taking several different routes to achieve this goal. Amorphous silicon...
    Resource Type:
    Masters Thesis
    Full Text:
    Sulfide Thin Film Transistor Using Chemical Bath Deposition. Abstract Approved: Chih-Hung Chang The

  • Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors

    Creator:
    Gorecki, Jenna Y.
    Abstract:
    Inkjet-printed p-type copper(I) iodide-based TFTs were successfully fabricated. As-printed copper(I) halide semiconductor films, such as CuI, CuBrI, and CuClI, were used as p-type active channel layers for TFTs. The entire process of the TFTs fabrication was maintained under 150 °C, which is compatible with flexible plastic substrates and transparent glass...
    Resource Type:
    Masters Thesis
    Full Text:
    Chih-Hung Chang Inkjet-printed p-type copper(I) iodide-based TFTs were successfully

  • Iron Chalcogenide-based Thin Films Fabricated by Inkjet Printing

    Creator:
    Fang, Zhen
    Abstract:
    Digital printing techniques offer several advantages in manufacturing electronics such as direct writing of materials, reduction of chemical waste, and scalability. In particular, printing can significantly simplify manufacturing processes by directly defining the channel area, the gate, and the source and drain contacts, allowing for lower costs and higher throughput...
    Resource Type:
    Masters Thesis
    Full Text:
    . Bronold, C. Hopner, and H. Tributsh. Iron disulfide for solar energy conversion. Solar Energy

  • Evaluation of amorphous oxide semiconductors for thin film transistors (TFTs) and resistive random access memory (RRAM) applications

    Creator:
    Rajachidambaram, Jaana Saranya
    Abstract:
    Thin-film transistors (TFTs) are primarily used as a switching element in liquid crystal displays. Currently, amorphous silicon is the dominant TFT technology for displays, but higher performance TFTs will become necessary to enable ultra-definition resolution high-frequency large-area displays. Amorphous zinc tin oxide (ZTO) TFTs were fabricated by RF magnetron sputter...
    Resource Type:
    Masters Thesis
    Full Text:
    staggered bottom gate structure is employed. F (C F d to a ch h ch igure 1.1: Fo C

  • Synthesis and characterization of aluminum oxide based materials - from molecule to device

    Creator:
    Wang, Wei
    Abstract:
    A scalable synthesis of the "flat" tridecameric inorganic cluster [Al₁₃(μ₃-OH)₆(μ-OH)₁₈(H₂O)₂₄]¹⁵⁺ has been realized by treating an aqueous aluminum nitrate solution with zinc-metal powder at room temperature. Single crystals and polycrystalline samples are readily obtained in yields exceeding 55% relative to the starting reagent Al(NO₃)₃. Products have been characterized by X-ray...
    Resource Type:
    Dissertation
    Full Text:
    dielectric properties of the aluminum oxide thin films. After annealing at 500 °C, thin film exhibits low

  • Modeling and characterization of amorphous oxide semiconductor thin-film transistors

    Creator:
    Yeh, Bao-Sung
    Abstract:
    The objective of the research presented herein is to elucidate the effect of traps in determining amorphous oxide semiconductor thin-film transistor (AOS TFT) performance using modeling and characterization. A novel method is proposed to extract the interface state distribution from a TFT transfer curve. Analysis of zinc-indium oxide (ZIO), zinc-tin...
    Resource Type:
    Dissertation
    Full Text:
    trends. A new methodology for accomplishing capacitance-voltage (C-V) assessment of AOS channel layers

  • Zinc tin oxide thin-film transistor circuits

    Creator:
    Heineck, Daniel Philip
    Abstract:
    The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO) as the channel layer. ZTO, in contrast to indium- or gallium-based amorphous oxide semiconductors (AOS), is perceived to be a more commercially viable AOS choice...
    Resource Type:
    Masters Thesis
    Full Text:
    voltages approximately 0 to 1.5 V and subthreshold swings below 0.5 V/dec when annealed in air at 400 ◦C

  • Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronics

    Creator:
    Munsee, Craig L.
    Abstract:
    The long-term goal of this research project is the development of solution-based inorganic dielectric and semiconductor materials for inkjet printed electronics. The main focus of this thesis involves testing of the materials and devices under development. A new solution-based inorganic dielectric material (HfOSO₄), given the name hafsox, is developed and...
    Resource Type:
    Masters Thesis
    Full Text:
    an estimated threshold voltage of c'-' 14 V

  • Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors

    Creator:
    Motley, Joshua R.
    Abstract:
    Investigations on the application of self-assembled monolayers (SAM) to indium gallium zinc oxide (IGZO) thin film transistors (TFT) for fabrication and channel modification are presented. The back channel of IGZO thin film transistors can be modified by the absorption of self-assembled monolayers. The electrical properties of the IGZO exposed back...
    Resource Type:
    Masters Thesis
    Full Text:
    . c) Solubility change in photoresist, soluble regions removed using developer. d) pattern to be