Index Catalog // ScholarsArchive@OSU

Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors

Creator:: Gorecki, Jenna Y.
Abstract:: Inkjet-printed p-type copper(I) iodide-based TFTs were successfully fabricated. As-printed copper(I) halide semiconductor films, such as CuI, CuBrI, and CuClI, were used as p-type active channel layers for TFTs. The entire process of the TFTs fabrication was maintained under 150 °C, which is compatible with flexible plastic substrates and transparent glass...
Resource Type:: Masters Thesis

Evaluation of amorphous oxide semiconductors for thin film transistors (TFTs) and resistive random access memory (RRAM) applications

Creator:: Rajachidambaram, Jaana Saranya
Abstract:: Thin-film transistors (TFTs) are primarily used as a switching element in liquid crystal displays. Currently, amorphous silicon is the dominant TFT technology for displays, but higher performance TFTs will become necessary to enable ultra-definition resolution high-frequency large-area displays. Amorphous zinc tin oxide (ZTO) TFTs were fabricated by RF magnetron sputter...
Resource Type:: Masters Thesis

Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors

Creator:: Motley, Joshua R.
Abstract:: Investigations on the application of self-assembled monolayers (SAM) to indium gallium zinc oxide (IGZO) thin film transistors (TFT) for fabrication and channel modification are presented. The back channel of IGZO thin film transistors can be modified by the absorption of self-assembled monolayers. The electrical properties of the IGZO exposed back...
Resource Type:: Masters Thesis
Full Text:: crystals. “Reprinted from NPG Asia Mat.1 / 1, Kim K.H., Song J.K., Technical evolution of liquid crystal

Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors

Creator:: Triska, Joshua B.
Abstract:: Nanolaminate dielectrics combine two or more insulating materials in a many-layered film. These structures can be made to significantly outperform films composed of a single one of their constituent materials by adjusting the composition ratio, arrangement, and size of the component layers. In this work, atomic layer deposition (ALD) is...
Resource Type:: Masters Thesis

Amorphous oxide semiconductors in circuit applications

Creator:: McFarlane, Brian Ross
Abstract:: The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
Resource Type:: Masters Thesis
Full Text:: of the research group. Notably, I would like to thank Hai Chiang, David Hong, Rick Presley, and Eric

Zinc tin oxide thin-film transistor circuits

Creator:: Heineck, Daniel Philip
Abstract:: The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO) as the channel layer. ZTO, in contrast to indium- or gallium-based amorphous oxide semiconductors (AOS), is perceived to be a more commercially viable AOS choice...
Resource Type:: Masters Thesis
Full Text:: Hong, Eric Sundholm, Hai Chiang, and Rick Presley for their continuous training, discussions, and

Zinc Tin Oxide Thin Films by Pulsed Laser Deposition for use in Transparent Thin-Film Transistors

Creator:: Osborne, James J.
Abstract:: Zinc tin oxide (ZTO) films deposited by pulsed laser deposition (PLD) are investigated as a channel layers for transparent thin-film transistors (TTFTs). Films are deposited on glass for characterization, and transistor channel layers are deposited onto aluminum oxide-titanium oxide/tin doped indium oxide/glass substrates (ATO/ITO/glass) to produce TTFTs. UV-visible spectroscopy on...
Resource Type:: Masters Thesis
Full Text:: was conducting. I acknowledge the help from David Hong, Matt Spiegelberg, and Rick Presley for

Instability and temperature-dependence assessment of IGZO TFTs

Creator:: Hoshino, Ken
Abstract:: Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
Resource Type:: Masters Thesis
Full Text:: David Hong and Hai Chiang, who provided me TFTs to test and tons of beneficial advice, and all the

Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs

Creator:: Hoshino, Ken
Abstract:: Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs,...
Resource Type:: Dissertation

Modeling and characterization of amorphous oxide semiconductor thin-film transistors

Creator:: Yeh, Bao-Sung
Abstract:: The objective of the research presented herein is to elucidate the effect of traps in determining amorphous oxide semiconductor thin-film transistor (AOS TFT) performance using modeling and characterization. A novel method is proposed to extract the interface state distribution from a TFT transfer curve. Analysis of zinc-indium oxide (ZIO), zinc-tin...
Resource Type:: Dissertation

ScholarsArchive@OSU

Low-temperature, Inkjet-printed p-Type Copper(I) Iodide-based Thin-Film Transistors

Evaluation of amorphous oxide semiconductors for thin film transistors (TFTs) and resistive random access memory (RRAM) applications

Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors

Atomic layer deposition of nanolaminate high-κ gate dielectrics for amorphous-oxide semiconductor thin film transistors

Amorphous oxide semiconductors in circuit applications

Zinc tin oxide thin-film transistor circuits

Zinc Tin Oxide Thin Films by Pulsed Laser Deposition for use in Transparent Thin-Film Transistors

Instability and temperature-dependence assessment of IGZO TFTs

Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs

Modeling and characterization of amorphous oxide semiconductor thin-film transistors

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