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  • Zinc Tin Oxide Thin Films by Pulsed Laser Deposition for use in Transparent Thin-Film Transistors

    Creator:
    Osborne, James J.
    Abstract:
    Zinc tin oxide (ZTO) films deposited by pulsed laser deposition (PLD) are investigated as a channel layers for transparent thin-film transistors (TTFTs). Films are deposited on glass for characterization, and transistor channel layers are deposited onto aluminum oxide-titanium oxide/tin doped indium oxide/glass substrates (ATO/ITO/glass) to produce TTFTs. UV-visible spectroscopy on...
    Resource Type:
    Masters Thesis
    Full Text:
    Laser Deposition for use in Transparent Thin-Film Transistors Abstract approved: Dr. Janet Tate Zinc

  • Fabrication of a cadmium sulfide thin film transistor using chemical bath deposition

    Creator:
    Voss, Curtis L.
    Abstract:
    The digital revolution has brought information to every corner of our daily lives. Inexpensive and flexible integrated circuits are needed for this continuing revolution. Silicon technology, the current workhorse of microelectronic industry, is far from inexpensive and flexible. Researchers are taking several different routes to achieve this goal. Amorphous silicon...
    Resource Type:
    Masters Thesis
    Full Text:
    source and drain contacts. Thus, the device is essentially an inverted gate thin film MOS transistor

  • Process development and modeling of thin-film transistors

    Creator:
    Hong, David
    Abstract:
    A class of high-performance thin-film transistor (TFT) channel materials has emerged involving oxides composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of three topics involving the development of these materials for TFT applications: modeling TFT currentvoltage characteristics, an exploratory method for...
    Resource Type:
    Masters Thesis
    Full Text:
    ....................................... 18 3.3 Thin-film transistor device characteristics .......................... 19 3.3.1 Threshold

  • Contact resistance and stability assessment of oxide-based thin film transistors

    Creator:
    Hung, Celia M.
    Abstract:
    This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment. First, determination of the contact resistance of indium tin oxide (ITO) on two wide-band gap semiconductors, zinc oxide (ZnO) and indium gallium oxide (IGO), is attempted and the effects of contact resistance on device...
    Resource Type:
    Masters Thesis
    Full Text:
    THIN-FILM TRANSISTORS ..37 4.1 Device fabrication

  • Investigation of low temperature solution-based deposition process for flexible electronics

    Creator:
    Chang, Yu-Jen
    Abstract:
    The critical contribution of this dissertation is to provide a better understanding of the fundamental Chemical Bath Deposition (CBD) growth kinetic and mechanism for the well known II-VI semiconductor CdS using the newly developed continuous flow microreactor. This continuous flow microreactor provides the temporal resolution to control the homogeneous reaction...
    Resource Type:
    Dissertation
    Full Text:
    nanocrystalline CdS semiconductor thin films at low temperature (80 oC). Enhancement-mode functional thin film

  • Modeling and characterization of amorphous oxide semiconductor thin-film transistors

    Creator:
    Yeh, Bao-Sung
    Abstract:
    The objective of the research presented herein is to elucidate the effect of traps in determining amorphous oxide semiconductor thin-film transistor (AOS TFT) performance using modeling and characterization. A novel method is proposed to extract the interface state distribution from a TFT transfer curve. Analysis of zinc-indium oxide (ZIO), zinc-tin...
    Resource Type:
    Dissertation
    Full Text:
    device physics overview of what constitutes an amorphous oxide semiconductor (AOS) thin-film transistor

  • Development of oxide semiconductors : materials, devices, and integration

    Creator:
    Chiang, Hai Q.
    Abstract:
    The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
    Resource Type:
    Dissertation
    Full Text:
    . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .. . . . . . . . . . . . . . . . . 30 3. DEVICE DEVELOPMENT, FABRICATION, AND CHARACTERIZATION 31 3.1 Thin film processing

  • Iron Chalcogenide-based Thin Films Fabricated by Inkjet Printing

    Creator:
    Fang, Zhen
    Abstract:
    Digital printing techniques offer several advantages in manufacturing electronics such as direct writing of materials, reduction of chemical waste, and scalability. In particular, printing can significantly simplify manufacturing processes by directly defining the channel area, the gate, and the source and drain contacts, allowing for lower costs and higher throughput...
    Resource Type:
    Masters Thesis
    Full Text:
    lowest leakage current at VG = 0V. The 0.01M device possessed a very thin film channel layer that

  • Zinc tin oxide thin-film transistor current mirror circuits

    Creator:
    Feller, Layannah Elizabeth
    Abstract:
    The central focus of this thesis is the design, fabrication and characterization of amorphous oxide semiconductor (AOS) thin-film transistor (TFT) current mirrors. The thin-film deposition and circuit fabrication methods used to realize zinc tin oxide (ZTO) TFT current mirrors are addressed in order to elucidate the processing challenges for this...
    Resource Type:
    Masters Thesis
    Full Text:
    . Title: Zinc Tin Oxide Thin-Film Transistor Current Mirror Circuits Abstract approved: John F. Wager

  • Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors

    Creator:
    Motley, Joshua R.
    Abstract:
    Investigations on the application of self-assembled monolayers (SAM) to indium gallium zinc oxide (IGZO) thin film transistors (TFT) for fabrication and channel modification are presented. The back channel of IGZO thin film transistors can be modified by the absorption of self-assembled monolayers. The electrical properties of the IGZO exposed back...
    Resource Type:
    Masters Thesis
    Full Text:
    . Title: Application of Self-Assembled Monolayers to InGaZnO Thin Film Transistors Abstract