The digital revolution has brought information to every corner of our daily lives. Inexpensive and flexible integrated circuits are needed for this continuing revolution. Silicon technology, the current workhorse of microelectronic industry, is far from inexpensive and flexible. Researchers are taking several different routes to achieve this goal. Amorphous silicon...
A class of high-performance thin-film transistor (TFT) channel materials has emerged
involving oxides composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n≥4)
electronic configurations. This thesis is devoted to the pursuit of three topics involving
the development of these materials for TFT applications: modeling TFT currentvoltage
characteristics, an exploratory method for...
This thesis focuses on two aspects of oxide-based thin-film transistors (TFTs), contact resistance and instability assessment.
First, determination of the contact resistance of indium tin oxide (ITO) on two wide-band gap semiconductors, zinc oxide (ZnO) and indium gallium oxide (IGO), is attempted and the effects of contact resistance on device...
The long-term goal of this research project is the development of solution-based inorganic dielectric and semiconductor materials for inkjet printed electronics. The main focus of this thesis involves testing of the materials and devices under development. A new solution-based inorganic dielectric material (HfOSO₄), given the name hafsox, is developed and...
The objective of the research presented herein is to elucidate the effect of traps in determining amorphous oxide semiconductor thin-film transistor (AOS TFT) performance using modeling and characterization. A novel method is proposed to extract the interface state distribution from a TFT transfer curve. Analysis of zinc-indium oxide (ZIO), zinc-tin...
The aim of this dissertation is to develop oxide semiconductors by radio-frequency
sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors
are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin
oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
Digital printing techniques offer several advantages in manufacturing electronics such as direct writing of materials, reduction of chemical waste, and scalability. In particular, printing can significantly simplify manufacturing processes by directly defining the channel area, the gate, and the source and drain contacts, allowing for lower costs and higher throughput...
Zinc tin oxide (ZTO) films deposited by pulsed laser deposition (PLD) are
investigated as a channel layers for transparent thin-film transistors (TTFTs).
Films are deposited on glass for characterization, and transistor channel layers are
deposited onto aluminum oxide-titanium oxide/tin doped indium oxide/glass
substrates (ATO/ITO/glass) to produce TTFTs.
UV-visible spectroscopy on...
The central focus of this thesis is the design, fabrication and characterization of amorphous oxide semiconductor (AOS) thin-film transistor (TFT) current mirrors. The thin-film deposition and circuit fabrication methods used to realize zinc tin oxide (ZTO) TFT
current mirrors are addressed in order to elucidate the processing challenges for this...
The critical contribution of this dissertation is to provide a better
understanding of the fundamental Chemical Bath Deposition (CBD) growth
kinetic and mechanism for the well known II-VI semiconductor CdS using the
newly developed continuous flow microreactor. This continuous flow microreactor
provides the temporal resolution to control the homogeneous reaction...