Two different doping techniques, oxygen intercalation and Mg cation
substitution, were investigated in thin film p-type CuScO₂, a wide band gap
semiconductor with the delafossite structure. Films rf-sputtered onto amorphous SiO₂
substrates were polycrystalline after post-deposition annealing. X-ray diffraction was
used to determine that the films are predominantly polycrystalline 3R...
Bulk properties of CuSc₁₋ₓMgₓO₂, CuSc₁₋ₓMgₓO₂₊y, BaCu₂S₂, Bai₁₋ₓKCu₂S₂, BaCu₂Se₂
and Bai₁₋ₓKₓCu₂Se₂ are investigated supporting the search for highly conductive p-type
thin films. Mg is an efficient dopant in CuScO₂ with conductivity up to l.5.10⁻² S/cm.
Oxidation of CuScO₂:Mg leads to further increase in conductivity up to 0.5 S/cm. The
amount of...
Zinc tin oxide (ZTO) films deposited by pulsed laser deposition (PLD) are
investigated as a channel layers for transparent thin-film transistors (TTFTs).
Films are deposited on glass for characterization, and transistor channel layers are
deposited onto aluminum oxide-titanium oxide/tin doped indium oxide/glass
substrates (ATO/ITO/glass) to produce TTFTs.
UV-visible spectroscopy on...
Transport and structural properties of Mg-doped and O-intercalated sintered powders and
polycrystalline films of CuSc₁₋ₓMgₓO[subscript 2+y] are reported. Substitution of Mg for Sc systematically
increases the p-type conductivity in CuSc₁₋ₓMgₓO₂ sintered powders, producing a maximum
conductivity of 0.015 S/cm at x≈0.06. A similar level of conductivity is observed in transparent...
The Seebeck coefficient is examined in the high temperature limit, using an approach based on a grand partition function containing Hubbard Hamiltonian interaction terms. Although the carriers of interest occupy localized Wannier states, this work is prefaced by the case of delocalized Bloch states, which is examined using Boltzmann transport,...
New transparent p- and n-type semiconductors and luminescent materials have been prepared and characterized. Synthesis, structures, optical and electrical properties of new chalcogenide fluoride p-type transparent semiconductors MCuQF (M=Ba, Sr; Q=S, Se, Te) are described. Band-gap tuning and improvement in conductivity through p-type doping are demonstrated in the family. The...
The primary focus of this thesis involves modeling and development of p-type thin-film transistors (p-TFTs), moving towards the realization of a filly transparent thin-film transistor (TTFT). The modeling portion of this thesis emphasizes the development of physics-based TFT models, specifically focusing on the elucidation of non-ideal current-voltage characteristic behavior. A...
This thesis focuses on two aspects of transparent electronics, SnO₂ transparent thin-film transistors (TTFTs) and transparent circuits. Both depletion- and enhancement-mode SnO₂ TTFTs are realized. The maximum effective mobility for the depletion- and enhancement-mode devices are 2 cm²V⁻¹s⁻¹ and 0.8 cm²V⁻¹s⁻¹, respectively. A variety of techniques to decrease the carrier...
The origin of high hole conduction in BaCuQF (Q=S,Se) was investigated by photoemission
measurements and full-potential linearized augmented plane wave band-structure calculations. In
both compounds, the large dispersion near the top of the valence band is realized by admixed states
of Cu 3d and S 3p or Se 4p orbitals,...