The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO) as the channel layer. ZTO, in contrast to indium- or gallium-based amorphous oxide semiconductors (AOS), is perceived to be a more commercially viable AOS choice...
Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
The variegated aqueous chemistries of metal cations are applied to the design and synthesis of non-toxic solution precursors suitable for additive printing of large-area oxide electronics. Polycondensation behaviors of aqueous Al+3 and PO4 +3 are manipulated in the deposition of atomically smooth amorphous aluminum oxide phosphate (AlPO) dielectric films. AlPO...
In recent years, a new class of high-performance thin-film transistors (TFTs) has emerged comprising amorphous oxide channel materials composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n ≥ 4, where 'n' refers to the row of the periodic table) electronic configuration. This thesis is devoted to the fabrication and characterization of...
The focus of this study is to develop a general and low-cost solution-based
process to fabricate micro- and nano-structured semiconductors that are suitable
for electronics. This process uses simple metal halide precursors dissolved in a
solvent (organic or aqueous) and is capable of forming uniform and continuous
thin films via...
This thesis focuses on two aspects of transparent electronics, SnO₂ transparent thin-film transistors (TTFTs) and transparent circuits. Both depletion- and enhancement-mode SnO₂ TTFTs are realized. The maximum effective mobility for the depletion- and enhancement-mode devices are 2 cm²V⁻¹s⁻¹ and 0.8 cm²V⁻¹s⁻¹, respectively. A variety of techniques to decrease the carrier...
Present day data processing technology requires very high speed signal processing
and data conversion rates. Traditionally, these circuits have been implemented in silicon
MOS technology, whose high speed performance is limited, due to inherent material properties.
Though relatively immature compared to silicon technology, GaAs integrated circuit
technology appears to be...
The objective of this thesis is to provide an initial demonstration of the feasibility of constructing highly transparent active electronic devices. Such a demonstration is successfully achieved in the fabrication of ZnO-based thin film transistors (TFTs) exhibiting transparency greater than ~90% in the visible portion of the electromagnetic spectrum and...
The parallelization and vectorization of Monte Carlo algorithms for modelling
charge transport in semiconductor devices are considered. The standard ensemble
Monte Carlo simulation of a three parabolic band model for GaAs is first
presented as partial verification of the simulation. The model includes scattering
due to acoustic, polar-optical and intervalley...