The chemistry of hafnium oxide based and materials are described in the context of ion exchange and lithography. HafSOx, represented by the composition HfO₂₋[subscript x](SO₄)x, is described to possess a significant capacity towards ion exchange in acidic and basic solutions, enabling films of HafSOx to be cleanly and readily be...
New transparent p- and n-type semiconductors and luminescent materials have been prepared and characterized. Synthesis, structures, optical and electrical properties of new chalcogenide fluoride p-type transparent semiconductors MCuQF (M=Ba, Sr; Q=S, Se, Te) are described. Band-gap tuning and improvement in conductivity through p-type doping are demonstrated in the family. The...
The general emphasis of this work has been synthesis, characterization, and applications of n- and p-type inorganic oxide thin films that are deposited from solutions. In particular, a study of n-type transparent semiconductor films of tin (IV) oxide and zinc-doped tin (IV) oxide has been performed by spin coating. Solution...
Metal-insulator-metal (MIM) tunnel devices have been proposed for high speed applications such as hot electron transistors, IR detectors, optical rectennas for IR energy harvesting, and backplanes for LCDs. The majority of these applications require highly asymmetric and non-linear current versus voltage (I-V) behavior at low applied voltages and ultra-high frequencies....
This thesis focuses on two aspects of transparent electronics, SnO₂ transparent thin-film transistors (TTFTs) and transparent circuits. Both depletion- and enhancement-mode SnO₂ TTFTs are realized. The maximum effective mobility for the depletion- and enhancement-mode devices are 2 cm²V⁻¹s⁻¹ and 0.8 cm²V⁻¹s⁻¹, respectively. A variety of techniques to decrease the carrier...
Oxo-hydroxo Group 5 metal clusters are an untapped resource to study and advance aqueous solution processing of metal oxide thin films. The tetramethylammonium (TMA) hexatantalate salt (TMA6[H2Ta6O19]) yields dense Ta2O5 films (~95% of the bulk ß-Ta2O5 density) with atomically smooth surfaces (<4 Å root mean square surface roughness). This same...
The semiconductor gallium arsenide (GaAs) has many potential
advantages over the more widely used semiconductor silicon (Si).
These include higher low field mobility, semi-insulating substrates,
a direct band-gap, and greater radiation hardness. All these
advantages offer distinct opportunities for implementation of new
circuit functions or extension of the operating conditions...
Flexible electronics processing techniques were applied to integrate a glucose sensor with a hormone-delivery catheter in order to create a cheap and minimally invasive method for patients with type 1 diabetes to continually monitor and control their blood sugar levels. Ultimately, this work intends to move toward the development of...
It has become customary in electrical engineering to think of
signal processing in terms of voltage variables to the exclusion of
current variables. This tendency has resulted in voltage signal
processing circuits such as voltage-controlled voltage sources
(VCVS) and voltage-mode operational amplifiers. However, the VCVS
operational amplifier has several limitations...
The purpose of this study is to develop experimental techniques to
characterize typical interconnect discontinuities, including bends, steps, T
junctions, vias and pads, which are the most commonly encountered
interconnections in high speed digital integrated circuits, hybrid and
monolithic microwave circuits and electronic packages. The time domain
reflection response of...