Index Catalog // ScholarsArchive@OSU

Noise measurements, models and analysis in GaAs MESFETs circuit design

Creator:: Yan, Kai-tuan Kelvin
Resource Type:: Dissertation
Full Text:: semiconductor and the oxide [8]. Explanations of the origin of 1/f noise in GaAs devices are varied and this

SPICE models for flicker noise in p-MOSFET's and phase noise effects on oscillator circuits

Creator:: Zhou, Junlin, 1973-
Resource Type:: Masters Thesis
Full Text:: - semiconductor field-effect transistors". Refer to Table 3.1, it shows the different MOSFET device and flicker

CMOS low noise amplifier design utilizing monolithic transformers

Creator:: Zhou, Jianjun J.
Abstract:: Full integration of CMOS low noise amplifiers (LNA) presents a challenge for low cost CMOS receiver systems. A critical problem faced in the design of an RF CMOS LNA is the inaccurate high-frequency noise model of the MOSFET implemented in circuit simulators such as SPICE. Silicon-based monolithic inductors are another...
Resource Type:: Dissertation
Full Text:: of the induced gate current noise in MOS transistor. 20 2.3 Small-signal noise circuit of a MOS

A study of the effects of oxide traps on the characteristics of indium phosphide MISFET's

Creator:: Prasad, S. Jayasimha
Resource Type:: Dissertation
Full Text:: the GaAs MESFET (Metal-Semiconductor Field Effect 2 Transistor) technology has evolved in recent

Analytical model of GaAs MESFET output conductance with frequency and temperature dependent parameters

Creator:: Lam, Steven C. F.
Abstract:: The output characteristics of a conventional GaAs depletion-mode MESFET device have been investigated. One of the important parameters of the small-signal GaAs MESFET model, g[subscript ds] (output conductance), is shown to be frequency and temperature dependent. Variations in g[subscript ds] are a serious problem in many analog and digital circuits...
Resource Type:: Masters Thesis
Full Text:: motion within a semiconductor crystal. For a long channel device, low field mobility serves as the

Characterization of oxygen and carbon effects in silicon material and MOSFET devices

Creator:: Haddad, Homayoon
Resource Type:: Dissertation
Full Text:: submicron Metal-Oxide-Semiconductor Field Effect Transistor development. As the complexity of new

Layout dependent and bias independent scalable substrate model for RF MOSFETs

Creator:: Suravarapu, Ravikanth
Abstract:: The dependence of the substrate resistance, R[subscript sub], for MOS transistor RF modeling on transistor biasing and layout is studied from device simulations and measurements. Though R[subscript sub] is found to be bias dependent, the error incurred by assuming a constant value equal to the DC resistance is not significant....
Resource Type:: Masters Thesis
Full Text:: low noise amplifier (LNA) is designed and fabricated in the 0.35 tm TSMC process to show the effect

Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronics

Creator:: Munsee, Craig L.
Abstract:: The long-term goal of this research project is the development of solution-based inorganic dielectric and semiconductor materials for inkjet printed electronics. The main focus of this thesis involves testing of the materials and devices under development. A new solution-based inorganic dielectric material (HfOSO₄), given the name hafsox, is developed and...
Resource Type:: Masters Thesis
Full Text:: Transistors (TFTs) ............................... 13 2.5.2 Metal-Semiconductor Field-Effect Transistor

Drain current transient characterization of P-channel GaAs MESFET

Creator:: Peng, Lan L.
Abstract:: GaAs MESFETs are widely used in high speed integrated circuits (ICs) and microwave circuits. Due to the materials and processing methods used in GaAs MESFET fabrication, deep level traps in the substrate materials have a strong influence on device performance. In this work we used the drain current transient characterization...
Resource Type:: Masters Thesis
Full Text:: OF P-CHANNEL GaAs MESFET 1. INTRODUCTION The metal-semiconductor field-effect transistor (MESFET

Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit

Creator:: Or, Pee-Keong
Abstract:: The characteristic of the subthreshold current in a GaAs MESFET exhibits a negative exponential function with Vgs. After studying the behavior of this current in this region over a range of temperature and drain bias voltages, a subthreshold current model was developed. The model was implemented in a circuit simulation...
Resource Type:: Masters Thesis
Full Text:: ]. The inherent high electron mobility makes GaAs Metal Semiconductor Field Effect Transistors (MESFETs

ScholarsArchive@OSU

Noise measurements, models and analysis in GaAs MESFETs circuit design

SPICE models for flicker noise in p-MOSFET's and phase noise effects on oscillator circuits

CMOS low noise amplifier design utilizing monolithic transformers

A study of the effects of oxide traps on the characteristics of indium phosphide MISFET's

Analytical model of GaAs MESFET output conductance with frequency and temperature dependent parameters

Characterization of oxygen and carbon effects in silicon material and MOSFET devices

Layout dependent and bias independent scalable substrate model for RF MOSFETs

Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronics

Drain current transient characterization of P-channel GaAs MESFET

Modeling of subthreshold current of GaAs MESFET and the design of voltage reference circuit

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