Internal charge-phosphor field characteristics of alternating-current thin-film electroluminescent devices

Citeable URL: https://ir.library.oregonstate.edu/concern/articles/ht24wk679

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Attribute Name	Values
Creator	Abu-Dayah, A. Kobayashi, S. Wager, J. F.
Abstract	The internal charge versus phosphor field (Q-Fp) technique is proposed as a method for characterization of the electrical properties of alternating-current thin-film electroluminescent (ACTFEL) devices. Q-Fp analysis provides direct information about the internal behavior of the ACTFEL device. The steady-state field and internal conduction, polarization, leakage, and relaxation charges may be readily educed from a Q-Fp plot.
Resource Type	Article
DOI	https://doi.org/10.1063/1.108860
Date Available	2010-01-27T22:30:12+00:00
Date Issued	1993-02-15
Citation	Abu-Dayah, A., Kobayashi, S., & Wager, J. F. (1993). Internal charge-phosphor field characteristics of alternating-current thin-film electroluminescent devices [Electronic version]. Applied Physics Letters, 62(7), 744-746.
Journal Title	Applied Physics Letters
Journal Volume	62
Dichiarazione dei diritti	Copyright Not Evaluated
Publisher	The American Institute of Physics
Language	English [eng]
Replaces	http://hdl.handle.net/1957/14131

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