Reactively sputtered films of silicon nitride for diffusion masking Public Deposited

http://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/3f462830z

Descriptions

Attribute NameValues
Creator
Abstract or Summary
  • The experimental procedure for reactively sputtering films of silicon nitride together with the methods for measuring the film thickness have been investigated. Some of the properties of these nitride films were studied. These properties included: infrared spectrum, etching properties, and index of refraction. The adherence of the films was also investigated. Research was conducted on the sputtering properties of silicon nitride. Some of the secondary parameters which affect the sputtering rate were studied. These parameters included: cathode-to-substrate distance, applied voltage, gas pressure, and time. The uniformity of the sputtered films was also investigated. The results of these experiments were similar to the results of many published reports on sputtering. The last area of research covered by this thesis was the masking ability of the silicon nitride films. It was found that these reactively sputtered silicon nitride films effectively masked against the diffusion of boron and phosphorus in silicon. The minimum masking thickness was also studied. The masking ability of these nitride films against zinc diffusion in gallium arsenide was not conclusively proven. It appeared that the nitride films were masking against zinc diffusion, but the results were erratic. It was concluded that the diffusion technique was producing these poor results. More work on masking in GaAs was suggested using different diffusant sources.
Resource Type
Date Available
Date Copyright
Date Issued
Degree Level
Degree Name
Degree Field
Degree Grantor
Commencement Year
Advisor
Academic Affiliation
Non-Academic Affiliation
Subject
Rights Statement
Peer Reviewed
Language
Digitization Specifications
  • File scanned at 300 ppi using ScandAll PRO 1.8.1 on a Fi-6770A in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
Replaces
Additional Information
  • description.provenance : Submitted by Lauren Kaysen (lkscannerosu@gmail.com) on 2014-05-20T23:16:19Z No. of bitstreams: 1 DelzerDennisR1967.pdf: 541261 bytes, checksum: ae98139af159048b482c72e124bf5aa1 (MD5)
  • description.provenance : Made available in DSpace on 2014-05-21T16:05:50Z (GMT). No. of bitstreams: 1 DelzerDennisR1967.pdf: 541261 bytes, checksum: ae98139af159048b482c72e124bf5aa1 (MD5) Previous issue date: 1966-08-29
  • description.provenance : Approved for entry into archive by Patricia Black(patricia.black@oregonstate.edu) on 2014-05-21T14:08:18Z (GMT) No. of bitstreams: 1 DelzerDennisR1967.pdf: 541261 bytes, checksum: ae98139af159048b482c72e124bf5aa1 (MD5)
  • description.provenance : Approved for entry into archive by Katy Davis(kdscannerosu@gmail.com) on 2014-05-21T16:05:50Z (GMT) No. of bitstreams: 1 DelzerDennisR1967.pdf: 541261 bytes, checksum: ae98139af159048b482c72e124bf5aa1 (MD5)

Relationships

Parents:

This work has no parents.

Last modified

Downloadable Content

Download PDF

Items