Graduate Thesis Or Dissertation
 

Broadband modeling of on-chip transformers for silicon RFICs

Öffentlich Deposited

Herunterladbarer Inhalt

PDF Herunterladen
https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/n009w472f

Descriptions

Attribute NameValues
Creator
Abstract
  • Magnetically coupled passive transformers are increasingly integrated on-chip for various analog and radio frequency (RF) applications including direct current (DC) isolation, impedance transformation/matching, and conversion between single-ended and differential signals. A primary motivation for the on-chip integration of transformers is the overall size reduction and reduced cost. However, the performance of on-chip transformers is adversely affected by increased losses in the conductors and silicon substrate as well as limited values of achievable inductance, coupling coefficient and quality factor. Consequently, accurate, broadband transformer models compatible with transient circuit simulation are needed for analog and RF integrated circuit design. This thesis presents a new two-step methodology for automated broadband model generation for monolithic transformers integrated on silicon substrates. First, an equivalent circuit model (ECM) in single or multi-PI topology is extracted from available four-port scattering parameters obtained by electromagnetic full-wave simulation or measurement. To further enhance the broadband characteristics of the extracted ECM, an automated augmentation method based on linear least squares fitting is adapted. The new augmentation procedure adds physically motivated circuit elements to the ECM resulting in a guaranteed stable and passive circuit model with improved accuracy over a broad frequency range. The modeling algorithm has been implemented in a MATLAB code. A typical SPECTRE model extraction over the frequency range of 0.1-10 GHz takes less than 4 minutes on an Intel-based 2.13 GHz Xeon computer. The new extraction approach is validated for a variety of transformer configurations built on standard BiCMOS and CMOS processes with stacked and interleaved topologies, different shapes, and various turns ratios, sizes and process parameters. The extracted models show good agreement over a broad frequency range with the corresponding measurement data obtained by 3-D full wave electromagnetic simulation.
License
Resource Type
Date Available
Date Issued
Degree Level
Degree Name
Degree Field
Degree Grantor
Commencement Year
Advisor
Committee Member
Academic Affiliation
Non-Academic Affiliation
Subject
Urheberrechts-Erklärung
Publisher
Peer Reviewed
Language
Replaces

Beziehungen

Parents:

This work has no parents.

In Collection:

Artikel

Miniaturansicht Titel Hochladedatum Sichtbarkeit Aktionen
file details RapoluKavitha2008.pdf 2017-08-08 Öffentlich Herunterladen