A study of the photoresponse of semi-insulating gallium arsenide

Graduate Thesis Or Dissertation

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Citeable URL: https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/pr76f609q

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Attribute Name	Values
Creator	Schumm, Gerhard
Abstract	The photoresponse behavior of semi-insulating GaAs is investigated. The photocarrier lifetime is discussed and the influence of surface and contact recombination is taken into account. Photocurrent-voltage characteristics have been measured and a mechanism for the gain in terms of space charge amplification and avalanching is suggested. The influence of deep level traps on the photoresponse of semi-insulating GaAs is investigated. Furthermore, the photocurrent-temperature dependence is studied and a strong increase of photocurrent below 160 K is reported.
Resource Type	Masters Thesis
Date Available	2013-07-15T16:00:19+00:00
Date Issued	1985-03-18
Degree Level	Master's
Degree Name	Master of Science (M.S.)
Degree Field	Electrical and Computer Engineering
Degree Grantor	Oregon State University
Commencement Year	1985
Advisor	Plant, Thomas K.
Academic Affiliation	Electrical and Computer Engineering
Non-Academic Affiliation	Oregon State University. Graduate School
Subject	Gallium arsenide semiconductors Photoconductivity
Urheberrechts-Erklärung	Copyright Not Evaluated
Publisher	Oregon State University
Peer Reviewed	No
Language	English [eng]
Digitization Specifications	File scanned at 300 ppi (Monochrome) using Capture Perfect 3.0.82 on a Canon DR-9080C in PDF format. CVista PdfCompressor 4.0 was used for pdf compression and textual OCR.
Replaces	http://hdl.handle.net/1957/40372

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