Graduate Thesis Or Dissertation
 

Growth and characterization of the p-type semiconductors SnS and BiCuOSe

Pubblico Deposited

Contenuto scaricabile

Scarica il pdf
https://ir.library.oregonstate.edu/concern/graduate_thesis_or_dissertations/t722hc72w

Descriptions

Attribute NameValues
Creator
Abstract
  • BiCuOSe and SnS are layered, moderate band gap (ε[subscript G] ≈ 1 eV) semiconductors that exhibit intrinsic p type conductivity. Doping of BiCuOSe with Ca results in a slight expansion of the lattice and an increase of the hole concentration from 10¹⁸ cm⁻³ to greater than 10²⁰ cm⁻³. The large carrier density in undoped films is the result of copper vacancies. Mobility is unaffected by doping, remaining constant at 1.5 cm²V⁻¹s⁻¹ in both undoped and doped films, because the Bi-O layers serve as the source of carriers, while transport occurs within the Cu-Se layers. Bi possesses a 6s² lone pair that was expected to hybridize with the oxygen p states at the top of the valence band, resulting in high hole mobility as compared to similar materials such as LaCuOSe, which lack this lone pair. However, both LaCuOSe and BiCuOSe have similar hole mobility. X-ray absorption and emission spectroscopy, combined with density functional theory calculations, reveal that the Bi 6s states contribute deep within the valence band, forming bonding and anti-bonding states with O 2p at 11 eV and 3 eV below the valence band maximum, respectively. Hence, the Bi lone pair does not contribute at the top of the valence band and does not enhance the hole mobility. The Bi 6p states contribute at the bottom of the conduction band, resulting in a smaller band gap for BiCuOSe than LaCuOSe (1 eV vs. 3 eV). SnS is a potential photovoltaic absorber composed of weakly coupled layers stacked along the long axis. This weak coupling results in the formation of strongly oriented films on amorphous substrates. The optical band gap is 1.2 eV, in agreement with GW calculations. Absorption reaches 10⁵ cm⁻¹ within 0.5 eV of the band gap. The p type conduction arises from energetically favorable tin vacancies. Variation of growth conditions yields carrier densities of 10¹⁴ - 10¹⁶ cm⁻³ and hole mobility of 7 - 15 cm²V⁻¹s⁻¹. SnS was alloyed with rocksalt CaS, which was predicted to form a rocksalt structure when the calcium content is increased past 18%. Films of Sn[subscript 1-x]Ca[subscript x]S with x from 0.4 to 0.9 adopt the rocksalt structure with a band gap of 1.1-1.3 eV, with absorption greater than 10⁵ cm⁻¹ within about 0.7 eV of the band gap. The lattice contracts as the calcium content of the films is increased, reaching 5.7 Å when x = 0.93. Films are highly insulating, but Seebeck measurements do indicate p type conduction.
License
Resource Type
Date Available
Date Issued
Degree Level
Degree Name
Degree Field
Degree Grantor
Commencement Year
Advisor
Committee Member
Academic Affiliation
Non-Academic Affiliation
Subject
Dichiarazione dei diritti
Publisher
Peer Reviewed
Language
Replaces

Le relazioni

Parents:

This work has no parents.

In Collection:

Elementi

Thumbnail Titolo Data caricata Visibilità Azioni
file details FrancisJason2013.pdf 2017-08-09 Pubblico Scaricare