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Filtering by: Creator Hall, Lynn L. Remove constraint Creator: Hall, Lynn L. Academic Affiliation Electrical Engineering and Computer Science Remove constraint Academic Affiliation: Electrical Engineering and Computer Science Subject Amorphous semiconductors Remove constraint Subject: Amorphous semiconductors

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  • Al-In-Sn-O thin-film transistors

    Creator:
    Stewart, Kevin A.
    Abstract:
    The aim of the research undertaken for this thesis was to develop a new high-performance amorphous oxide semiconductor (AOS) for use as a channel layer in a thin-film transistor (TFT). AOS TFTs offer higher electron mobility than the established amorphous silicon based technology. A new channel material comprised of aluminum...
    Resource Type:
    Masters Thesis
    Full Text:
    ). . . . . . . . . . . . . . . . 73 A.2 Hall measurements with the Van der Pauw method of 80 and 200 nm thick AITO films

  • Instability and temperature-dependence assessment of IGZO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
    Resource Type:
    Masters Thesis
    Full Text:
    equivalent to making the channel length, L, much larger than the oxide thickness, tOX. Additionally, the

  • Zinc tin oxide thin-film transistor current mirror circuits

    Creator:
    Feller, Layannah Elizabeth
    Abstract:
    The central focus of this thesis is the design, fabrication and characterization of amorphous oxide semiconductor (AOS) thin-film transistor (TFT) current mirrors. The thin-film deposition and circuit fabrication methods used to realize zinc tin oxide (ZTO) TFT current mirrors are addressed in order to elucidate the processing challenges for this...
    Resource Type:
    Masters Thesis
    Full Text:
    ∆L. . . . . . . . . . . . . . . . . . . . . . 9 2.5 The parameter VA can be extracted from the TFT

  • Modeling and characterization of amorphous oxide semiconductor thin-film transistors

    Creator:
    Yeh, Bao-Sung
    Abstract:
    The objective of the research presented herein is to elucidate the effect of traps in determining amorphous oxide semiconductor thin-film transistor (AOS TFT) performance using modeling and characterization. A novel method is proposed to extract the interface state distribution from a TFT transfer curve. Analysis of zinc-indium oxide (ZIO), zinc-tin...
    Resource Type:
    Dissertation
    Full Text:
    . The first number in the figure is the Hall mobility in cm2 V-1s-1. The second number in parentheses

  • Zinc tin oxide thin-film transistor circuits

    Creator:
    Heineck, Daniel Philip
    Abstract:
    The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO) as the channel layer. ZTO, in contrast to indium- or gallium-based amorphous oxide semiconductors (AOS), is perceived to be a more commercially viable AOS choice...
    Resource Type:
    Masters Thesis
    Full Text:
    waveforms for bridge-tied and cross-tied ZTO-channel circuits with a W/L ratio of 10

  • Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment

    Creator:
    Sundholm, Eric Steven
    Abstract:
    Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this thesis. Within this theme, three primary areas of focus are pursued. The first focus is the realization of a transparent three-stage ring oscillator with buffered output and an output frequency in the megahertz range. This leads to...
    Resource Type:
    Masters Thesis

  • Amorphous oxide semiconductors in circuit applications

    Creator:
    McFarlane, Brian Ross
    Abstract:
    The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
    Resource Type:
    Masters Thesis
    Full Text:
    L µCG[(VGS − VON )VDS − V 2 DS 2 ] (2.1) where CG is the gate capacitance, the turn-on voltage