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Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices

Creator:: Hitt, John C.
Resource Type:: Masters Thesis
Full Text:: thin-film electroluminescent devices AN ABSTRACT OF THE THESIS OF John C. Hitt for the degree of

An n-sheet, state-space ACTFEL device model

Creator:: Hitt, John C.
Abstract:: The objective of the research presented in this thesis is to develop, implement, and demonstrate the utility of an n-sheet, state-space alternating-current thin-film electroluminescent (ACTFEL) device model. In this model, the phosphor layer is discretized into n + 1 layers, with band-to-band impact ionization, space charge creation/ annihilation, and luminescent...
Resource Type:: Dissertation
Full Text:: THE DISSERTATION OF John C. Hitt for the degree of Doctor of Philosophy in Electrical & Computer

Surface recombination velocity and bulk lifetime in GaAs and InP

Creator:: Rastegar, Bahador
Abstract:: An analytical expression is derived which allows the bulk minority carrier recombination lifetime, t, and the surface recombination velocity, S, to be extracted from a single noncontact photoconductivity decay (PCD) measurement. This analytical expression is rather complex, but can be reduced to a first order approximation. The first order approximation...
Resource Type:: Masters Thesis
Full Text:: Bulk Lifetime in GaAs and InP. Abstract approved: Redacted for Privacy 1 Dr. John F. Wager An

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Creator:: Huang, Chun-ta
Abstract:: A study of deep levels of the emitter region of a heterojunction bipolar transistor is investigated using deep level transient spectroscopy (DLTS), deep level admittance spectroscopy (DLAS), thermally stimulated capacitance (TSCAP), and capacitance-voltage (C-V) profiling. The DX center, with an activation energy of 0.45 eV, is the only deep level...
Resource Type:: Masters Thesis
Full Text:: Heteroiunction Bipolar Transistors Abstract approved: John . Wager A study of deep levels of the emitter

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Creator:: Kamdar, Pravin P.
Resource Type:: Masters Thesis
Full Text:: Privacy Abstract approved: John F. WaXer Solar cells with energy bandgaps engineered for the optimal

Improved stability in ACTFEL devices

Creator:: Khormaei, Iranpour
Abstract:: The stability of ZnS:Mn AC thin film Electroluminescence (ACEFEL) devices as demonstrated by the brightness-voltage (BV) characteristics is discussed. Two procedures for improvement of the stability are demonstrated. The first method is the addition of a CaS buffer layer to one or both interfaces of the ZnS active phosphor layer....
Resource Type:: Masters Thesis
Full Text:: Abstract approved: John F. Ihge/: The stability of ZnS:Mn AC thin film Electroluminescence (ACEFEL

Characterization of organic light-emitting devices

Creator:: Norris, Benjamin J.
Abstract:: In this thesis steady-state (i.e. steady-state with respect to the applied voltage waveform) transient current-transient voltage [i(t)-v(t)], transient brightness-transient current [b(t)-i(t)], transient brightness-transient voltage [b(t)-v(t)], transient current [i(t)], transient brightness [b(t)], and detrapped charge analysis are introduced as novel organic light emitting device (OLED) characterization methods. These analysis methods involve...
Resource Type:: Masters Thesis
Full Text:: thesis steady-state (i. e. steady-state with respect to the applied volt age waveform) transient

Electro-optical characterization of SrS:Ce, SrS:Cu, and SrS:Cu,Ag alternating-current thin-film electroluminescent devices

Creator:: Grudzinsky, Arkady S.
Abstract:: The purpose of this thesis is to contribute to the understanding of SrS-based alternating-current thin-film electroluminescent (ACTFEL) device operation. Three main accomplishments serving this purpose are presented in this thesis. First, two new methods are developed for estimation of insulator capacitance in ACTFEL devices possessing a large amount of dynamic...
Resource Type:: Masters Thesis
Full Text:: . Both insulator capaci tance estimation methods employ applied voltage waveforms with long pulses (e

State space modeling of alternating-current thin-film electroluminescent devices

Creator:: Peery, Jeffrey B.
Resource Type:: Masters Thesis
Full Text:: would like to thank Dr. John Wager for his support, encouragement and tremendous enthusiasm during the

Instabilities in InP MIS capacitors

Creator:: Juang, Min Tzuan
Abstract:: The drain current of InP MISPETs is often observed to decrease as a function of time after the application of a positive gate bias which involves an accumulation of electrons in the channel. Various models have been proposed for this drain current drift (DCD) phenomenon. In this thesis, variable-temperature bias-stress...
Resource Type:: Masters Thesis
Full Text:: Privacy John F. Wager The drain current of InP MISPETs is often observed to decrease as a function of

ScholarsArchive@OSU

Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices

An n-sheet, state-space ACTFEL device model

Surface recombination velocity and bulk lifetime in GaAs and InP

A study of deep levels of AlGaAs/GaAs heterojunction bipolar transistors

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Improved stability in ACTFEL devices

Characterization of organic light-emitting devices

Electro-optical characterization of SrS:Ce, SrS:Cu, and SrS:Cu,Ag alternating-current thin-film electroluminescent devices

State space modeling of alternating-current thin-film electroluminescent devices

Instabilities in InP MIS capacitors

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