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Filtering by: Creator Gabriel, John T. Remove constraint Creator: Gabriel, John T. Advisor Wager, John F. Remove constraint Advisor: Wager, John F. Non-Academic Affiliation Oregon State University. Graduate School Remove constraint Non-Academic Affiliation: Oregon State University. Graduate School

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  • Phosphor development for alternating-current thin-film electroluminescent applications

    Creator:
    Nguyen, Tin T.
    Resource Type:
    Masters Thesis
    Full Text:
    AN ABSTRACT OF THE THESIS OF Tin T. Nguyen for the degree

  • Improved stability in ACTFEL devices

    Creator:
    Khormaei, Iranpour
    Abstract:
    The stability of ZnS:Mn AC thin film Electroluminescence (ACEFEL) devices as demonstrated by the brightness-voltage (BV) characteristics is discussed. Two procedures for improvement of the stability are demonstrated. The first method is the addition of a CaS buffer layer to one or both interfaces of the ZnS active phosphor layer....
    Resource Type:
    Masters Thesis
    Full Text:
    . Allstot and Dr. S. John T. Owen, for serving on my M.S. committee. Special thanks are due to my mother

  • Electrical characterization of n-type aluminum gallium arsenide

    Creator:
    Kim, Seung-bae
    Resource Type:
    Dissertation
    Full Text:
    , Professor John F. Wager, for the support, guidance, and encouragement he has given me throughout this work

  • Characterization of organic light-emitting devices

    Creator:
    Norris, Benjamin J.
    Abstract:
    In this thesis steady-state (i.e. steady-state with respect to the applied voltage waveform) transient current-transient voltage [i(t)-v(t)], transient brightness-transient current [b(t)-i(t)], transient brightness-transient voltage [b(t)-v(t)], transient current [i(t)], transient brightness [b(t)], and detrapped charge analysis are introduced as novel organic light emitting device (OLED) characterization methods. These analysis methods involve...
    Resource Type:
    Masters Thesis
    Full Text:
    current-transient voltage [i(t)-v(t)], transient brightness­ transient current [b(t)-i(t)], transient

  • Discrete trap modeling of thin-film transistors

    Creator:
    Yerubandi, Ganesh Chakravarthy
    Abstract:
    A discrete trap model is developed and employed for elucidation of thin-film transistor (TFT) device physics trends. An attractive feature of this model is that only two model parameters are required, the trap energy depth, E[subscript T], and the trap density, N[subscript T]. The most relevant trends occur when E[subscript...
    Resource Type:
    Masters Thesis
    Full Text:
    :_____________________________________________________ John F. Wager A discrete trap model is developed and employed for elucidation of thin-film

  • Surface recombination velocity and bulk lifetime in GaAs and InP

    Creator:
    Rastegar, Bahador
    Abstract:
    An analytical expression is derived which allows the bulk minority carrier recombination lifetime, t, and the surface recombination velocity, S, to be extracted from a single noncontact photoconductivity decay (PCD) measurement. This analytical expression is rather complex, but can be reduced to a first order approximation. The first order approximation...
    Resource Type:
    Masters Thesis
    Full Text:
    Bulk Lifetime in GaAs and InP. Abstract approved: Redacted for Privacy 1 Dr. John F. Wager An

  • Fabrication and characterization of thin-film transistor materials and devices

    Creator:
    Hong, David
    Abstract:
    A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
    Resource Type:
    Dissertation
    Full Text:
    : Fabrication and Characterization of Thin-film Transistor Materials and Devices. Abstract approved: John F

  • Characterization of solution-based inorganic semiconductor and dielectric materials for inkjet printed electronics

    Creator:
    Munsee, Craig L.
    Abstract:
    The long-term goal of this research project is the development of solution-based inorganic dielectric and semiconductor materials for inkjet printed electronics. The main focus of this thesis involves testing of the materials and devices under development. A new solution-based inorganic dielectric material (HfOSO₄), given the name hafsox, is developed and...
    Resource Type:
    Masters Thesis
    Full Text:
    permittivity of free space, A is the capacitor area, and t is the thickness of the oxide. This means that a

  • Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices

    Creator:
    Hitt, John C.
    Resource Type:
    Masters Thesis
    Full Text:
    thin-film electroluminescent devices AN ABSTRACT OF THE THESIS OF John C. Hitt for the degree of

  • An n-sheet, state-space ACTFEL device model

    Creator:
    Hitt, John C.
    Abstract:
    The objective of the research presented in this thesis is to develop, implement, and demonstrate the utility of an n-sheet, state-space alternating-current thin-film electroluminescent (ACTFEL) device model. In this model, the phosphor layer is discretized into n + 1 layers, with band-to-band impact ionization, space charge creation/ annihilation, and luminescent...
    Resource Type:
    Dissertation
    Full Text:
    THE DISSERTATION OF John C. Hitt for the degree of Doctor of Philosophy in Electrical & Computer