Index Catalog // ScholarsArchive@OSU

Zinc tin oxide thin-film transistor current mirror circuits

Creator:: Feller, Layannah Elizabeth
Abstract:: The central focus of this thesis is the design, fabrication and characterization of amorphous oxide semiconductor (AOS) thin-film transistor (TFT) current mirrors. The thin-film deposition and circuit fabrication methods used to realize zinc tin oxide (ZTO) TFT current mirrors are addressed in order to elucidate the processing challenges for this...
Resource Type:: Masters Thesis
Full Text:: . Title: Zinc Tin Oxide Thin-Film Transistor Current Mirror Circuits Abstract approved: John F. Wager

Transparent electronics : thin-film transistors and integrated circuits

Creator:: Presley, Rick E.
Abstract:: This thesis focuses on two aspects of transparent electronics, SnO₂ transparent thin-film transistors (TTFTs) and transparent circuits. Both depletion- and enhancement-mode SnO₂ TTFTs are realized. The maximum effective mobility for the depletion- and enhancement-mode devices are 2 cm²V⁻¹s⁻¹ and 0.8 cm²V⁻¹s⁻¹, respectively. A variety of techniques to decrease the carrier...
Resource Type:: Masters Thesis
Full Text:: . Title: Transparent Electronics: Thin-Film Transistors and Integrated Circuits Abstract approved: John

Thin-film transistors with amorphous oxide channel layers

Creator:: Grover, Manan S.
Abstract:: In recent years, a new class of high-performance thin-film transistors (TFTs) has emerged comprising amorphous oxide channel materials composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n ≥ 4, where 'n' refers to the row of the periodic table) electronic configuration. This thesis is devoted to the fabrication and characterization of...
Resource Type:: Masters Thesis

Thermally-stable amorphous metal thin films

Creator:: McGlone, John M.
Abstract:: Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess...
Resource Type:: Masters Thesis
Full Text:: Al2O3. Dr. John Conley and his group, S. Smith, N. Alimardani, D. Austin, and T. Klarr, contributed

Surface recombination velocity and bulk lifetime in GaAs and InP

Creator:: Rastegar, Bahador
Abstract:: An analytical expression is derived which allows the bulk minority carrier recombination lifetime, t, and the surface recombination velocity, S, to be extracted from a single noncontact photoconductivity decay (PCD) measurement. This analytical expression is rather complex, but can be reduced to a first order approximation. The first order approximation...
Resource Type:: Masters Thesis
Full Text:: Bulk Lifetime in GaAs and InP. Abstract approved: Redacted for Privacy 1 Dr. John F. Wager An

Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices

Creator:: Hitt, John C.
Resource Type:: Masters Thesis
Full Text:: thin-film electroluminescent devices AN ABSTRACT OF THE THESIS OF John C. Hitt for the degree of

State space modeling of alternating-current thin-film electroluminescent devices

Creator:: Peery, Jeffrey B.
Resource Type:: Masters Thesis
Full Text:: would like to thank Dr. John Wager for his support, encouragement and tremendous enthusiasm during the

SPICE modeling of ACTFEL devices and OLEDs

Creator:: Bender, Jeffrey P.
Abstract:: The achievements of this thesis are the development of several models for the SPICE (Simulation Program with Integrated Circuit Emphasis) simulation of alternating-current thin-film electroluminescent (ACTFEL) devices, organic light-emitting devices (OLEDs), and polymer light-emitting devices (PLEDs). First, an ACTFEL model based on the built-in HSPICE Fowler-Nordheim tunneling diode is developed,...
Resource Type:: Masters Thesis
Full Text:: : John The achievements of this thesis are the development of several models for the SPICE (Simulation

Sine burst waveform aging and electro-optic characterization of ALE ZnS:Mn ACTFEL devices for head-mounted active matrix displays

Creator:: Mendes, James Kevin
Resource Type:: Masters Thesis
Full Text:: ZnS:Mn ACTFEL Devices for Head-Mounted Active Matrix Displays. Abstract approve John F. W ger Old

Process development and modeling of thin-film transistors

Creator:: Hong, David
Abstract:: A class of high-performance thin-film transistor (TFT) channel materials has emerged involving oxides composed of heavy-metal cations (HMCs) with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of three topics involving the development of these materials for TFT applications: modeling TFT currentvoltage characteristics, an exploratory method for...
Resource Type:: Masters Thesis
Full Text:: Development and J1odeliIf Thin- Abstract approved: John F 'jim Transistors. A class of high-performance

Physical vapor deposition of novel thin-film solar absorbers

Creator:: Waters, Benjamin E.
Abstract:: Current leading thin-film solar cell technologies, i.e., cadmium telluride (CdTe) and copper indium gallium diselenide (CIGS), employ elements which are either toxic (Cd), or rare and/or expensive (In, Te, Ga, and Cd). The aim of this thesis is to investigate new, abundant, non-toxic p-type semiconductors for potential solar absorber application....
Resource Type:: Masters Thesis
Full Text:: : Physical Vapor Deposition of Novel Thin-Film Solar Absorbers Abstract approved: John F. Wager Current

Phosphor development for alternating-current thin-film electroluminescent applications

Creator:: Nguyen, Tin T.
Resource Type:: Masters Thesis
Full Text:: sincere appreciation to Dr. John F. Wager for his guidance, encouragement, and patience during my

p-type transparent electronics

Creator:: Valencia, Melinda Marie
Abstract:: The objective of this thesis is to contribute to the development of p-type materials for transparent electronics applications. Thin films of ®-BaCu2S2, a p-type semi-transparent semiconductor, are fabricated and characterized. ®-BaCu2S2 has a transmittance of 60% to 80 % in the visible portion of the electromagnetic spectrum. The mobility, conductivity,...
Resource Type:: Masters Thesis
Full Text:: , 2003. Title: p-Type Transparent Electronics. Abstract approved: John F. Wager The objective of this

Oxide phosphors deposited by activated reactive evaporation for ACTFEL device applications

Creator:: Yokoyama, Tomoe
Abstract:: The goal of this thesis study is to develop an activated reactive evaporation (ARE) system and to demonstrate its utility by fabricating-alternating current thin-film electroluminescent (ACTFEL) oxide phosphor devices. ARE entails evaporation in an activated gas. The main ARE system components are three thermal evaporation sources, a microwave power supply,...
Resource Type:: Masters Thesis
Full Text:: Phosphors Deposited by Activated Reactive Evaporation for ACTFEL Device pp1ic Abstract approved: John F

Numerical simulation of Al [subscript x] Ga [subscript 1-x] As/GaAs and (Al [subscript x] Ga [subscript 1-x]) [subscript 0.47] In [subscript 0.53] As/InP bandgap engineered solar cells

Creator:: Kamdar, Pravin P.
Resource Type:: Masters Thesis
Full Text:: Privacy Abstract approved: John F. WaXer Solar cells with energy bandgaps engineered for the optimal

Novel phosphor development for alternating-current thin-film electroluminescent devices

Creator:: Maddix, Crystal M.
Resource Type:: Masters Thesis
Full Text:: approved:Abstract approved: ______-----.-,_----,_______ j John F. WagerJohn F. Wager The purpose of this thesis

Novel ACTFEL phosphor development

Creator:: Ang, Wie Ming
Abstract:: The goal of this thesis is to identify and to explore novel ACTFEL phosphor materials. Several important materials properties relevant to ACTFEL phosphor development are identified. All of these properties cannot be obtained simultaneously. Therefore, several key phosphor materials properties are identified as critical to the development of an ACTFEL...
Resource Type:: Dissertation
Full Text:: Redacted for Privacy Redacted for Privacy Redacted for Privacy ACKNOWLEDGEMENT Thanks to Prof. John F

Nontraditional amorphous oxide semiconductor thin-film transistor fabrication

Creator:: Sundholm, Eric Steven
Abstract:: Fabrication techniques and process integration considerations for amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this dissertation. Within this theme three primary areas of focus are pursued. The first focus involves formulating a general framework for assessing passivation. Avoiding formation of an undesirable backside accumulation layer...
Resource Type:: Dissertation
Full Text:: approved: John F. Wager Fabrication techniques and process integration considerations for amorphous

Modeling phosphor space charge in alternating-current thin-film electroluminescent devices

Creator:: Keir, Paul D.
Abstract:: The accomplishments presented in this thesis are the development of three models for simulation of space charge generation in the phosphor layer of alternating current thin-film electroluminescent (ACTFEL) devices and the results from simulation of these models. First, a single sheet charge model is developed and simulated. The single sheet...
Resource Type:: Masters Thesis
Full Text:: -film electroluminescent devices AN ABSTRACT OF THE THESIS OF Paul D. Keir for the degree of Master

Modeling and development of p-type thin-film transistors

Creator:: Spiegelberg, Matthew Craig
Abstract:: The primary focus of this thesis involves modeling and development of p-type thin-film transistors (p-TFTs), moving towards the realization of a filly transparent thin-film transistor (TTFT). The modeling portion of this thesis emphasizes the development of physics-based TFT models, specifically focusing on the elucidation of non-ideal current-voltage characteristic behavior. A...
Resource Type:: Masters Thesis
Full Text:: also like to specifically thank my major advisor, Dr. John Wager for his patience, guidance

Manufacture and characterization of novel ACTFEL materials and devices

Creator:: Bender, Jeffrey P.
Abstract:: The aim of this dissertation is to develop non-traditional approaches to alternating-current thin-film electroluminescent (ACTFEL) device fabrication. ACTFEL technology suffers from a lack of adequately bright and efficient primary-color phosphors and cannot presently compete in the low-cost display market. Therefore the research presented in this dissertation focuses on an exploration...
Resource Type:: Dissertation
Full Text:: : Manufacture and Characterization of Abstract approved. John F/Wager The aim of this dissertation is to

Low-cost deposition methods for transparent thin-film transistors

Creator:: Norris, Benjamin J.
Abstract:: The objective of this dissertation is to introduce low-cost processing methods for the fabrication of ZnO transparent thin-film transistors (TTFTs). A novel method for depositing ZnO body layers via spin-coating of a zinc nitrate-based spin solution is presented. The processing conditions of spin-coated ZnO are optimized to produce continuous and...
Resource Type:: Dissertation
Full Text:: . Title: Low-Cost Deposition Methods for Transparent Thin-Film Transistors. Abstract approved: John F

Investigation of ultra-thin In-Ga-Zn-O thin-film transistors

Creator:: Chiang, Tsung-Han
Abstract:: The objective of the work reported herein is to explore the impact of decreasing channel thickness on radio-frequency (RF) sputtered amorphous indium-gallium-zinc oxide (a-IGZO) thin-ﬁlm transistors (TFTs) electrical performance through the evaluation of drain current versus gate voltage (I[subscript D] − V[subscript G]) transfer curves. For a ﬁxed set of...
Resource Type:: Masters Thesis
Full Text:: : Investigation of Ultra-thin In-Ga-Zn-O Thin-Film Transistors Abstract approved: John F. Wager The objective

Internal charge-phosphor field analysis, electrical characterization, and aging studies of AC thin-film electroluminescent devices

Creator:: Abu-Dayah, Ahmad I.
Resource Type:: Masters Thesis
Full Text:: I would like to thank my advisor, Professor John F. Wager, for his advice, patience, and

Instability and temperature-dependence assessment of IGZO TFTs

Creator:: Hoshino, Ken
Abstract:: Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
Resource Type:: Masters Thesis
Full Text:: Assessment of IGZO TFTs. Abstract approved: _____________________________________________________ John

Instabilities in InP MIS capacitors

Creator:: Juang, Min Tzuan
Abstract:: The drain current of InP MISPETs is often observed to decrease as a function of time after the application of a positive gate bias which involves an accumulation of electrons in the channel. Various models have been proposed for this drain current drift (DCD) phenomenon. In this thesis, variable-temperature bias-stress...
Resource Type:: Masters Thesis
Full Text:: Privacy John F. Wager The drain current of InP MISPETs is often observed to decrease as a function of

Inorganic thin-film solar cells

Creator:: Spies, Jack Alexander
Abstract:: The primary objective of this thesis is to explore new absorber and p-type window layer materials for thin-film solar cell applications. A new thin-film electron beam deposition system has been installed, is now operational, and has been used to deposit several types of solar cell absorber layers. Material investigations include...
Resource Type:: Masters Thesis
Full Text:: : Inorganic Thin-Film Solar Cells Abstract approved: John F. Wager The primary objective of this thesis is

Improved stability in ACTFEL devices

Creator:: Khormaei, Iranpour
Abstract:: The stability of ZnS:Mn AC thin film Electroluminescence (ACEFEL) devices as demonstrated by the brightness-voltage (BV) characteristics is discussed. Two procedures for improvement of the stability are demonstrated. The first method is the addition of a CaS buffer layer to one or both interfaces of the ZnS active phosphor layer....
Resource Type:: Masters Thesis
Full Text:: Abstract approved: John F. Ihge/: The stability of ZnS:Mn AC thin film Electroluminescence (ACEFEL

Hot carrier degradation of sub-micron n-channel MOSFETs subject to static stress

Creator:: Aminzadeh, Payman G.
Abstract:: Hot carrier effects in sub-micron lightly doped drain (LDD) n-channel MOSFETs under static (DC) stress are studied in order to establish the degradation mechanisms of such devices. Degradation is monitored as a function of time at various gate voltages. Under accelerated aging conditions (i.e. large drain voltages) the gate voltage...
Resource Type:: Masters Thesis
Full Text:: Degradation Of Sub-Micron n-channel MOSFETs Subiect to Static Stress. Abstract approved: Dr. John F. Wager

High resolution electroluminescent display using active matrix approach

Creator:: Khormaei, Iranpour
Resource Type:: Dissertation
Full Text:: : High Resolution Electroluminescent Display Using Active Matrix Approach. Abstract approved: John F

Ferroelectric thin film development

Creator:: Harman, Taran V.
Abstract:: The long-term goal of the research project initiated with this thesis is the development of lead-free, fully-transparent ferroelectric devices, such as ferroelectric capacitors or ferroelectric-gate field-effect transistors. Ferroelectric materials exhibit spontaneous polarization with the application of an external electric field, which is persistent upon removal of the applied field, and...
Resource Type:: Masters Thesis
Full Text:: : Ferroelectric Thin Film Development . Abstract approved: John F. Wager The long-term goal of the research

Fabrication process assessment and negative bias illumination stress study of IGZO and ZTO TFTs

Creator:: Hoshino, Ken
Abstract:: Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated for thin-film transistor (TFT) applications. Negative bias illumination stress (NBIS) is employed for electrical stability assessment. Unpassivated IGZO and ZTO TFTs suffer from severe NBIS instabilities. Zinc-tin-silicon oxide is found to be an effective passivation layer for IGZO and ZTO TFTs,...
Resource Type:: Dissertation
Full Text:: : _____________________________________________________ John F. Wager Indium-gallium-zinc oxide (IGZO) and zinc-tin oxide (ZTO) are investigated

Fabrication and characterization of thin-film transistor materials and devices

Creator:: Hong, David
Abstract:: A class of inorganic thin-film transistor (TFT) semiconductor materials has emerged involving oxides composed of post-transitional cations with (n-1)d¹⁰ns⁰ (n≥4) electronic configurations. This thesis is devoted to the pursuit of topics involving the development of these materials for TFT applications: Deposition of zinc oxide and zinc tin oxide semiconductor layers...
Resource Type:: Dissertation
Full Text:: : Fabrication and Characterization of Thin-film Transistor Materials and Devices. Abstract approved: John F

Fabrication and characterization of ACTFEL devices

Creator:: Keir, Paul D.
Abstract:: The goal of this thesis is the identification and synthesis of high-luminance, primary color alternating-current thin-film electroluminescent (ACTFEL) devices. Special attention is paid to the synthesis of primary color green ACTFEL devices because of the lack of an adequate primary green ACTFEL phosphor and the dominance of green wavelengths in...
Resource Type:: Dissertation
Full Text:: ABSTRACT OF THE DISSERTATION OF Paul D. Keir for the degree of Doctor of Philosophy in Electrical

Electronic Conduction Mechanisms in Insulators

Creator:: Chiang, Tsung-Han
Abstract:: The research presented herein focuses on electrical assessment of oxide thin films as insulators. The current density-electric field (J-E) characteristics of four insulators of dramatically different electrical quality are assessed in terms of their operative electronic conduction mechanisms. Conduction in the two high-quality insulators is dominated by Ohmic conduction and...
Resource Type:: Dissertation
Full Text:: . Title: Electronic Conduction Mechanisms in Insulators Abstract approved: John F. Wager The research

Electro-optical characterization of SrS:Ce, SrS:Cu, and SrS:Cu,Ag alternating-current thin-film electroluminescent devices

Creator:: Grudzinsky, Arkady S.
Abstract:: The purpose of this thesis is to contribute to the understanding of SrS-based alternating-current thin-film electroluminescent (ACTFEL) device operation. Three main accomplishments serving this purpose are presented in this thesis. First, two new methods are developed for estimation of insulator capacitance in ACTFEL devices possessing a large amount of dynamic...
Resource Type:: Masters Thesis
Full Text:: , Author ACKNOWLEDGEMENTS I would like to thank professor John Wager for his support and advice

Electrical characterization, maximum charge-maximum voltage (Q[max]-V[max]) analysis, aging and temperature studies of thiogallate thin-film electroluminescent devices

Creator:: Pham, Long V.
Resource Type:: Masters Thesis
Full Text:: Studies of Thiogallate Thin- Film Electroluminescent Devices. Abstract approved Dr. John F. Wager

Electrical characterization of n-type aluminum gallium arsenide

Creator:: Kim, Seung-bae
Resource Type:: Dissertation
Full Text:: , Professor John F. Wager, for the support, guidance, and encouragement he has given me throughout this work

Electrical characterization and aging studies of green ZnS: Tb AC thin-film electroluminescent devices

Creator:: Kumar, Manoj, 1972-
Resource Type:: Masters Thesis
Full Text:: wish to thank my advisor Dr. John F. Wager for introducing me to the exciting world of AC'11-EL

Electrical characterization and aging studies of ALE ZnS:Mn ACTFEL devices with varying phosphor thicknesses

Creator:: Shih, Shou-Po
Resource Type:: Masters Thesis
Full Text:: Electrical, d Computer Engineering Head of Department of EledtriFrantteoffilouter Engineering Dean of

Discrete trap modeling of thin-film transistors

Creator:: Yerubandi, Ganesh Chakravarthy
Abstract:: A discrete trap model is developed and employed for elucidation of thin-film transistor (TFT) device physics trends. An attractive feature of this model is that only two model parameters are required, the trap energy depth, E[subscript T], and the trap density, N[subscript T]. The most relevant trends occur when E[subscript...
Resource Type:: Masters Thesis
Full Text:: :_____________________________________________________ John F. Wager A discrete trap model is developed and employed for elucidation of thin-film

Diamond-like carbon films for electroluminescent applications

Creator:: Kim, Seung-bae
Abstract:: White electroluminescence (EL) was observed for the first time from diamond-like carbon (DLC) films at room temperature. Electroluminescence was observed by the application of ac voltages in excess of 200 V to a metal-insulator- semiconductor (i.e. DLC)-insulator-metal (MISIM) device structure. For EL applications, three types of the DLC films were...
Resource Type:: Masters Thesis
Full Text:: Applications. Abstract approved: Redacted'for privacy Dr. John F. Wger White electroluminescence (EL) was

Development, fabrication, and characterization of transparent electronic devices

Creator:: Hoffman, Randy L.
Abstract:: The objective of this thesis is to provide an initial demonstration of the feasibility of constructing highly transparent active electronic devices. Such a demonstration is successfully achieved in the fabrication of ZnO-based thin film transistors (TFTs) exhibiting transparency greater than ~90% in the visible portion of the electromagnetic spectrum and...
Resource Type:: Masters Thesis
Full Text:: : Develonment. Fabrication, and Characterization of Transparent Electronic Devices. Abstract approved: John F

Development of zinc tin oxide-based transparent thin-film transistors

Creator:: Chiang, Hai Q.
Abstract:: The focus of this thesis involves development of highly transparent, n-channel, accumulation- mode thin-film transistors employing a zinc tin oxide (ZTO) channel layer. ZTO-based transparent thin-film transistors (TTFTs) show improved device performance compared to ZnO-based TTFTs. An estimated peak effective mobility for these devices as high as ~100 cm² V⁻¹sec⁻¹...
Resource Type:: Masters Thesis
Full Text:: : Development of Zinc Tin Oxide- Abstract approved: John F. Thin-Film Transistors. The focus of this thesis

Development of oxide semiconductors : materials, devices, and integration

Creator:: Chiang, Hai Q.
Abstract:: The aim of this dissertation is to develop oxide semiconductors by radio-frequency sputtering for thin-film transistor (TFT) applications. A variety of oxide semiconductors are used as the TFT channel layer, including indium gallium oxide (IGO), zinc tin oxide (ZTO), and indium gallium zinc oxide (IGZO). The variety of materials used...
Resource Type:: Dissertation
Full Text:: : John F. Wager The aim of this dissertation is to develop oxide semiconductors by radio-frequency

Development of high efficiency solar absorbers

Creator:: Ravichandran, Ram
Abstract:: Current cadmium telluride and copper indium gallium diselenide thin-film solar cells (TFSCs) utilize thick absorbers (2 - 4 μm). For efficient carrier extraction in these TFSCs, the absorber layer requires high carrier mobilities and a long minority carrier lifetime, which necessitates the use of a high purity, defect-free thin film....
Resource Type:: Dissertation
Full Text:: : Development of High Efficiency Solar Absorbers . Abstract approved: John F. Wager Current cadmium telluride

Development of Cu-based Thin Films for Optoelectronic Applications

Creator:: Angelos, Gregory S.
Abstract:: CIGS and CdTe based commercial thin-ﬁlm solar cells (TFSCs) require an absorber thickness greater than 2 µm and 4 µm, respectively, to adequately absorb the solar spectrum. To efficiently extract photoexcited electrons, these TFSCs require relatively defect-free absorbers with high-minority carrier mobility (> 100 cm2V−1s−1) and long lifetime (> 10...
Resource Type:: Dissertation
Full Text:: -based Thin Films for Optoelectronic Applications Abstract approved: John F. Wager CIGS and CdTe based

Development of Amorphous Metal Thin Films for Thermal Inkjet Printing and Microelectronics

Creator:: McGlone, John M.
Abstract:: Due to a lack of grain boundaries, an amorphous metal thin film (AMTF) possesses advantageous mechanical properties and enhanced chemical stability that is potentially useful for thermal inkjet (TIJ) printing applications. The use of an AMTF as a TIJ resistor or cavitation plate could lead to a thinner TIJ cavitation...
Resource Type:: Dissertation
Full Text:: AN ABSTRACT OF THE DISSERTATION OF John M. McGlone for the

Development and characterization of AlInN as an alternating-current thin-film electroluminescent display phosphor

Creator:: Mueller, Matthew R.
Resource Type:: Masters Thesis
Full Text:: Phosphor. Abstract approved: Dr. John F. Wager The goal of this thesis is to evaluate Al InN as an

Design, fabrication, and testing of inhomogeneous dielectrics

Creator:: Lim, Sungkyoo
Abstract:: In this thesis the concept of inhomogeneous dielectrics is demonstrated for various optical coating applications. Compositionally-varying silicon oxynitride (SiON) dielectric layers, with the refractive index varying as a function of position, are grown by computer-controlled plasma-enhanced chemical vapor deposition (PECVD) using silane, nitrogen, and nitrous oxide reactant gases. Compositionally graded...
Resource Type:: Dissertation
Full Text:: Inhomogeneous Dielectrics Abstract approved: Dr. John F. Wager In this thesis the concept of inhomogeneous

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