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Filtering by: Creator Wager, John F. Remove constraint Creator: Wager, John F. Degree Level Master's Remove constraint Degree Level: Master's

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  • Zinc tin oxide thin-film transistor circuits

    Creator:
    Heineck, Daniel Philip
    Abstract:
    The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO) as the channel layer. ZTO, in contrast to indium- or gallium-based amorphous oxide semiconductors (AOS), is perceived to be a more commercially viable AOS choice...
    Resource Type:
    Masters Thesis
    Full Text:
    Tin Oxide Thin-Film Transistor Circuits Abstract approved: John F. Wager The primary objective of

  • Amorphous oxide semiconductor thin-film transistor ring oscillators and material assessment

    Creator:
    Sundholm, Eric Steven
    Abstract:
    Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this thesis. Within this theme, three primary areas of focus are pursued. The first focus is the realization of a transparent three-stage ring oscillator with buffered output and an output frequency in the megahertz range. This leads to...
    Resource Type:
    Masters Thesis
    Full Text:
    approved: John F. Wager Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the

  • Transparent electronics : thin-film transistors and integrated circuits

    Creator:
    Presley, Rick E.
    Abstract:
    This thesis focuses on two aspects of transparent electronics, SnO₂ transparent thin-film transistors (TTFTs) and transparent circuits. Both depletion- and enhancement-mode SnO₂ TTFTs are realized. The maximum effective mobility for the depletion- and enhancement-mode devices are 2 cm²V⁻¹s⁻¹ and 0.8 cm²V⁻¹s⁻¹, respectively. A variety of techniques to decrease the carrier...
    Resource Type:
    Masters Thesis
    Full Text:
    professor, Dr. John F. Wager for providing the opportunity to work on this research topic and providing the

  • Thermally-stable amorphous metal thin films

    Creator:
    McGlone, John M.
    Abstract:
    Amorphous metal thin films (AMTFs) are of potential use for metal-insulator-metal (MIM) tunnel diode applications due to their ultra-smooth surfaces, a consequence of their amorphous microstructure. The objective of this thesis is to design a thermally-stable AMTF capable of maintaining MIM tunnel diode performance after a post-deposition anneal in excess...
    Resource Type:
    Masters Thesis
    Full Text:
    : Thermally-Stable Amorphous Metal Thin Films. Abstract approved: John F. Wager Amorphous metal thin films

  • ACTFEL device simulation with impact ionization using a two-sheet charge model

    Creator:
    Bouchard, Anthony F.
    Abstract:
    The main achievement of this thesis is the development of a two-sheet charge simulation model with space charge creation by trap-to-band impact ionization to describe the electrical characteristics of alternating-current thin-film electroluminescent (ACTFEL) devices. The two-sheet charge model localizes all of the space charge in the phosphor region of an...
    Resource Type:
    Masters Thesis
    Full Text:
    F. Bouchard, Author Redacted for Privacy ACKNOWLEDGMENT I would like to thank Dr. John Wager

  • Static space charge in evaporated ZnS:Mn alternating-current thin-film electroluminescent devices

    Creator:
    Hitt, John C.
    Resource Type:
    Masters Thesis
    Full Text:
    Redacted for Privacy Redacted for Privacy ACKNOWLEDGEMENTS I would like to thank Dr. John Wager for

  • Amorphous oxide semiconductors in circuit applications

    Creator:
    McFarlane, Brian Ross
    Abstract:
    The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
    Resource Type:
    Masters Thesis
    Full Text:
    : Amorphous Oxide Semiconductors in Circuit Applications Abstract approved: John F. Wager The focus of this

  • Instability and temperature-dependence assessment of IGZO TFTs

    Creator:
    Hoshino, Ken
    Abstract:
    Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
    Resource Type:
    Masters Thesis
    Full Text:
    F. Wager Amorphous oxide semiconductors (AOSs) are of great current interest for thin- film

  • Zinc tin oxide thin-film transistor current mirror circuits

    Creator:
    Feller, Layannah Elizabeth
    Abstract:
    The central focus of this thesis is the design, fabrication and characterization of amorphous oxide semiconductor (AOS) thin-film transistor (TFT) current mirrors. The thin-film deposition and circuit fabrication methods used to realize zinc tin oxide (ZTO) TFT current mirrors are addressed in order to elucidate the processing challenges for this...
    Resource Type:
    Masters Thesis
    Full Text:
    . Title: Zinc Tin Oxide Thin-Film Transistor Current Mirror Circuits Abstract approved: John F. Wager

  • Improved stability in ACTFEL devices

    Creator:
    Khormaei, Iranpour
    Abstract:
    The stability of ZnS:Mn AC thin film Electroluminescence (ACEFEL) devices as demonstrated by the brightness-voltage (BV) characteristics is discussed. Two procedures for improvement of the stability are demonstrated. The first method is the addition of a CaS buffer layer to one or both interfaces of the ZnS active phosphor layer....
    Resource Type:
    Masters Thesis
    Full Text:
    would like to express my gratitude to my advisor, Professor John F. Wager, for his constant support