Index Catalog // ScholarsArchive@OSU

Creator:: Rajachidambaram, Jaana Saranya
Abstract:: Thin-film transistors (TFTs) are primarily used as a switching element in liquid crystal displays. Currently, amorphous silicon is the dominant TFT technology for displays, but higher performance TFTs will become necessary to enable ultra-definition resolution high-frequency large-area displays. Amorphous zinc tin oxide (ZTO) TFTs were fabricated by RF magnetron sputter...
Resource Type:: Masters Thesis
Full Text:: staggered bottom gate structure is employed. F (C F d to a ch h ch igure 1.1: Fo C

Creator:: Feller, Layannah Elizabeth
Abstract:: The central focus of this thesis is the design, fabrication and characterization of amorphous oxide semiconductor (AOS) thin-film transistor (TFT) current mirrors. The thin-film deposition and circuit fabrication methods used to realize zinc tin oxide (ZTO) TFT current mirrors are addressed in order to elucidate the processing challenges for this...
Resource Type:: Masters Thesis
Full Text:: . Title: Zinc Tin Oxide Thin-Film Transistor Current Mirror Circuits Abstract approved: John F. Wager

Creator:: Sundholm, Eric Steven
Abstract:: Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the central theme of this thesis. Within this theme, three primary areas of focus are pursued. The first focus is the realization of a transparent three-stage ring oscillator with buffered output and an output frequency in the megahertz range. This leads to...
Resource Type:: Masters Thesis
Full Text:: approved: John F. Wager Amorphous oxide semiconductor (AOS) thin-film transistors (TFTs) constitute the

Creator:: Heineck, Daniel Philip
Abstract:: The primary objective of this thesis is to develop a process for fabricating integrated circuits based on thin-film transistors (TFTs) using zinc tin oxide (ZTO) as the channel layer. ZTO, in contrast to indium- or gallium-based amorphous oxide semiconductors (AOS), is perceived to be a more commercially viable AOS choice...
Resource Type:: Masters Thesis
Full Text:: Tin Oxide Thin-Film Transistor Circuits Abstract approved: John F. Wager The primary objective of

Creator:: Hoshino, Ken
Abstract:: Amorphous oxide semiconductors (AOSs) are of great current interest for thin-film transistor (TFT) channel layer applications. In particular, indium gallium zinc oxide (IGZO) is under intense development for commercial applications because of its demonstrated high performance at low processing temperatures. The objective of the research presented in this thesis is...
Resource Type:: Masters Thesis
Full Text:: F. Wager Amorphous oxide semiconductors (AOSs) are of great current interest for thin- film

Creator:: McFarlane, Brian Ross
Abstract:: The focus of this thesis is the investigation of thin-film transistors (TFTs) based on amorphous oxide semiconductors (AOSs) in two circuit applications. To date, circuits implemented with AOS-based TFTs have been primarily enhancement-enhancement inverters, ring oscillators based on these inverters operating at peak frequencies up to ~400 kHz, and two-transistor...
Resource Type:: Masters Thesis
Full Text:: : Amorphous Oxide Semiconductors in Circuit Applications Abstract approved: John F. Wager The focus of this

ScholarsArchive@OSU